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| Number | Title | Issue Date |
| 7399387 | Target for sputtering and a method for manufacturing a magnetic recording medium using the target A target for sputtering includes a sputtering material layer having tilt surfaces. Sputtering material particles are emitted from the tilt surfaces in directions of their normals. Consequently, even though the target and a substrate are arranged approximately parall... | 07/15/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7300557 | Device for targeted application of deposition material to a substrate The invention relates to a device for the targeted application of deposition material onto a substrate, especially for focusing the sputter flux onto a narrow angular range in a PVD-system. The invention is characterized in that the deposition material is directed t... | 11/27/2007 |
| 7294245 | Cover ring and shield supporting a wafer ring in a plasma reactor A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the... | 11/13/2007 |
| 7235160 | Hollow cathode sputtering apparatus and related method The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the... | 06/26/2007 |
| 7179350 | Reactive sputtering of silicon nitride films by RF supported DC magnetron An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from t... | 02/20/2007 |
| 7179351 | Methods and apparatus for magnetron sputtering In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. T... | 02/20/2007 |
| 7166199 | Magnetron sputtering systems including anodic gas distribution systems The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a ... | 01/23/2007 |
| 7141145 | Gas injection for uniform composition reactively sputter-deposited thin films A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas... | 11/28/2006 |
| 7135097 | Box-shaped facing-targets sputtering apparatus and method for producing compound thin film Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer. The box-shaped facing-targets sputtering apparatus includes a box-shaped f... | 11/14/2006 |
| 7094322 | Use of self-sustained atmospheric pressure plasma for the scattering and absorption of electromagnetic radiation A self-sustained atmospheric pressure system for absorbing or scattering electromagnetic waves using a capillary discharge electrode configuration plasma panel and a method for using the same. Of particular interest is the application of this system to vary the leve... | 08/22/2006 |
| 7041201 | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter et... | 05/09/2006 |
| 7038389 | Magnetron plasma source A point projection type flood plasma source implements a magnetron sputter cold cathode electron source in a discharge cavity separated from a process chamber by a narrow conduit and a solenoid magnetic field. The solenoid magnetic field impedes radial electron flow... | 05/02/2006 |
| 7033471 | Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers A Vacuum transport chamber for disk-shaped substrates, has a base plate structure has an interior surface which borders an interior of the chamber on one side thereof. A covering structure is situated parallel and opposite an interior surface of the base plate struc... | 04/25/2006 |
| 7018515 | Selectable dual position magnetron A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, waf... | 03/28/2006 |
| 7001491 | Vacuum-processing chamber-shield and multi-chamber pumping method One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are ma... | 02/21/2006 |
| 6962648 | Back-biased face target sputtering A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and fo... | 11/08/2005 |
| 6881311 | Facing-targets-type sputtering apparatus Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are dispos... | 04/19/2005 |
| 6872285 | System for depositing a film This application discloses a system for depositing a magnetic film for a magnetic recording layer or depositing an underlying film prior to depositing a magnetic film as a recording layer. The system comprises; a chamber in which the film is deposited onto a substra... | 03/29/2005 |
| 6860977 | Method for manufacturing a workpiece using a magnetron sputter source A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life,... | 03/01/2005 |
| 6830664 | Cluster tool with a hollow cathode array A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality o... | 12/14/2004 |
| 6790326 | Magnetron for a vault shaped sputtering target having two opposed sidewall magnets A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A ... | 09/14/2004 |
| 6776881 | Magnetron atomization source and method of use thereof For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetri... | 08/17/2004 |
| 6761804 | Inverted magnetron A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of t... | 07/13/2004 |
| 6752911 | Device and method for coating objects at a high temperature The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed ... | 06/22/2004 |
| 6749730 | Sputter device An object of the present invention is to alter the shape of the magnetic field with ease in the state of auxiliary magnet poles being disposed in a sputtering apparatus. In a sputtering apparatus according to the present invention, one or more magnetron type ... | 06/15/2004 |
| 6743342 | Sputtering target with a partially enclosed vault A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within ... | 06/01/2004 |
| 6733642 | System for unbalanced magnetron sputtering with AC power An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current sou... | 05/11/2004 |
| 6730196 | Auxiliary electromagnets in a magnetron sputter reactor A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnet... | 05/04/2004 |
| 6719886 | Method and apparatus for ionized physical vapor deposition Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing... | 04/13/2004 |
| 6689253 | Facing target assembly and sputter deposition apparatus A facing target sputtering apparatus, comprising: inner and outer spaced-apart, concentric, and coextensive tubular cathodes open at each end, with the inwardly facing surface of the outer cathode and the outwardly facing surface of the inner cathode; a first ... | 02/10/2004 |
| 6689254 | Sputtering apparatus with isolated coolant and sputtering target therefor A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferabl... | 02/10/2004 |
| 6682637 | Magnetron sputter source To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a conca... | 01/27/2004 |
| 6660140 | Sputtering apparatus In a sputtering apparatus for depositing material onto a workpiece, an RF coil is disposed in a chamber between a first target and a workpiece support. The RF coil includes a re-sputtering surface of electrically conductive non-target material which faces... | 12/09/2003 |
| 6649036 | Mirrortron sputtering apparatus A mirrortron sputtering apparatus for sputtering on a substrate includes a vacuum chamber for placing therein a pair of targets spaced apart from each other with inner surfaces thereof facing each other and outer surfaces thereof positioned opposite to th... | 11/18/2003 |
| 6641702 | Sputtering device The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a sing... | 11/04/2003 |
| 6620298 | Magnetron sputtering method and apparatus A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed f... | 09/16/2003 |
| 6620299 | Process and device for the coating of substrates by means of bipolar pulsed magnetron sputtering and the use thereof Process and device for coating substrates utilizing bipolar pulsed magnetron sputtering in the frequency range between 10 and 100 kHz, wherein the device includes at least three magnetron sources. Each of the at least three magnetron sources includes a ta... | 09/16/2003 |
| 6613199 | Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagn... | 09/02/2003 |
| 6605198 | Apparatus for, and method of, depositing a film on a substrate An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity cause electrons from the target to ionize neutral gas (e.g. argon) atoms in the cavity. The ions cause the target to release sputtered atoms ... | 08/12/2003 |
