Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 8177947 | Sputtering target Provided is a sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction is 0.4 or less, and even 0.2 or less in a Ta or Ta alloy target. Further provided is a sputtering target in which the ratio of X-ray intensity of (110) on ... | 05/15/2012 |
| 8163143 | Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scan... | 04/24/2012 |
| 8157973 | Sputtering target/backing plate bonded body Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provid... | 04/17/2012 |
| 8152976 | AG-based alloy sputtering target The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputte... | 04/10/2012 |
| 8137518 | Magnetic shunts in tubular targets A sputter target has a carrier body and a target material arranged on the carrier body, wherein the carrier body has a rear surface facing away from the target material and the target material has a front surface facing away from the carrier body. A ferromagnetic ma... | 03/20/2012 |
| 8133368 | Encapsulated sputtering target Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lan... | 03/13/2012 |
| 8062486 | Lithium-containing transition metal oxide target, process for producing the same and lithium ion thin film secondary battery Proposed are a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the sintered compact has a relative density of 90% or higher and an average g... | 11/22/2011 |
| 8057650 | Soft magnetic FeCo based target material A soft-magnetic FeCo based target material is provided which has a high saturation magnetic flux density and superior atmospheric corrosion resistance. The target material is a soft-magnetic FeCo based target material made of an FeCo based alloy. The FeCo based allo... | 11/15/2011 |
| 8038857 | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. | 10/18/2011 |
| 8029655 | Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as smal... | 10/04/2011 |
| 7998324 | Sputtering target and process for producing si oxide film therewith A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I(111)) to peak intensity of (220) face (I(220)) of Si, (I | 08/16/2011 |
| 7964070 | Highly pure hafnium material, target thin film comprising the same and method for producing highly pure hafnium Provided is a manufacturing method of high purity hafnium including the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further perf... | 06/21/2011 |
| 7943021 | Sb-Te alloy sintered compact target and manufacturing method thereof Provided is an Sb—Te alloy sintered compact target using atomized powder consisting of substantially spherical particles of an Sb—Te alloy, wherein the spherical atomized powder consists of particles that were crushed and flattened, and the flattened particles e... | 05/17/2011 |
| 7780826 | Cr-doped FeCoB based target material and method for producing the same There is disclosed a method for producing a Cr-doped FeCoB based target material that can be used efficiently in magnetron sputtering processes and has a low magnetic permeability. In the method for producing the target material, there are firstly provided raw-mater... | 08/24/2010 |
| 7510635 | High purity zinc oxide powder and method for production thereof, and high purity zinc oxide target and thin film of high purity zinc oxide Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto i... | 03/31/2009 |
| 7431808 | Sputter target based on titanium dioxide An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are s... | 10/07/2008 |
| 7393600 | Sputtering target, sintered article, conductive film fabricated by utilizing the same, organic EL device, and substrate for use therein A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is at... | 07/01/2008 |
| 7347353 | Method for connecting magnetic substance target to backing plate, and magnetic substance target A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting th... | 03/25/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| RE40100 | Fabrication of B/C/N/O/Si doped sputtering targets The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si ... | 02/26/2008 |
| 7328831 | Method of making a brazed metal article and the article formed thereby A method of making an article that is comprised of a metal foam in contact with a base metal by an intermediate braze composition, in particular, a method of brazing a metal foam to a base metal via a braze composition. In one preferred method, a polymeric foam is c... | 02/12/2008 |
| 7316763 | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may sla... | 01/08/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7311874 | Sputter target and method for fabricating sputter target including a plurality of materials A method of fabricating a sputter target comprises: homogenously blending a plurality of powders including at least a first powder and a second powder. The first powder is comprised of chromium (Cr), cobalt (Co), ruthenium (Ru), nickel (Ni), or iron (Fe). The second... | 12/25/2007 |
| 7300617 | Method of making fusion cast articles Fusion cast indium zinc oxide articles and methods of manufacturing fusion cast indium zinc articles are disclosed. The fusion cast indium zinc articles can be used as sputtering targets for forming transparent conductive films. ... | 11/27/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7288224 | Method of producing a sputtering target A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of α, β, γ and δ thereof being in the relationship of 0.5≦α | 10/30/2007 |
| 7282123 | Composite sputter target and phosphor deposition method The invention is a novel sputter target and deposition method for multi-element thin film phosphors for thick film dielectric electroluminescent displays in which the deposited phosphors provide a high luminance and colors required for TV applications. The method co... | 10/16/2007 |
| 7279211 | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target Provided is a sputtering target and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, as well as the manufacturing method thereof, characterized in th... | 10/09/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7262085 | Display device A display device includes an insulating substrate, a thin-film transistor arranged on the insulating substrate, a pixel electrode including a transparent electrode, and an aluminum alloy film as a connection wiring section for electrically connecting between the thi... | 08/28/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7241368 | Hafnium silicide target for gate oxide film formation and its production method The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiO... | 07/10/2007 |
| 7229510 | Manganese alloy sputtering target and method for producing the same A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that i... | 06/12/2007 |
| 7229588 | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the p... | 06/12/2007 |
| 7228722 | Method of forming sputtering articles by multidirectional deformation A method of producing a valve metal mill form having dimensions sufficient to be divided to form a plurality of sputter targets is described. The method includes multidirectional deformation of an ingot to form a mill form having a preferred average grain size of ab... | 06/12/2007 |
| 7214619 | Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma i... | 05/08/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7194197 | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible. ... | 03/20/2007 |
| 7186324 | Hard film cutting tools, cutting tool coated with hard film, process for forming hard film and target used to form hard film A hard film for cutting tools which is composed of (Ti1−a−b−c−d, Ala, Crb, Sic, Bd)(C1−eNe) 0.5≦a≦0.8, 0.06≦b, 0≦c≦0.1, 0≦... | 03/06/2007 |
