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| Number | Title | Issue Date |
| 8123918 | Method and a system for operating a physical vapor deposition process A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The targe... | 02/28/2012 |
| 8057648 | Deposition system using noise canceller and its method of control A deposition system and its method of control cancels the influence of noise occurring during measuring of a deposition rate using a noise canceller in order to exactly control the deposition rate, and obtains a film of a desired thickness. The deposition system inc... | 11/15/2011 |
| 7927472 | Optical film thickness controlling method, optical film thickness controlling apparatus, dielectric multilayer film manufacturing apparatus, and dielectric multilayer film manufactured using the same controlling apparatus or manufacturing apparatus To provide a method of controlling film thickness of dielectric multilayer film, such as optical thin film, with high precision, an optical film thickness controlling apparatus and a dielectric multilayer film manufacturing apparatus that can control the film thickn... | 04/19/2011 |
| 7914654 | Method and apparatus for depositing a magnetoresistive multilayer film This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a sub... | 03/29/2011 |
| 7510634 | Apparatus and methods for deposition and/or etch selectivity Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of ... | 03/31/2009 |
| 7420182 | Combined radio frequency and hall effect ion source and plasma accelerator system This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces ... | 09/02/2008 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7378001 | Magnetron sputtering A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target ... | 05/27/2008 |
| 7373257 | Photometrically modulated delivery of reagents A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to respons... | 05/13/2008 |
| 7324865 | Run-to-run control method for automated control of metal deposition processes A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of de... | 01/29/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| 7314525 | Plasma CVD apparatus A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies Si... | 01/01/2008 |
| 7305311 | Arc detection and handling in radio frequency power applications A radio frequency power delivery system comprises an RF power generator, arc detection circuitry, and control logic responsive to the arc detection circuitry. A dynamic boundary is computed about the measured value of a parameter representative of or related to the ... | 12/04/2007 |
| 7301149 | Apparatus and method for determining a thickness of a deposited material Method and apparatus for determining a thickness of a deposited material. Energy is passed through the deposited material, wherein some of the energy is transmitted. The transmitted energy is received, and the received energy is used to determine a thickness of the ... | 11/27/2007 |
| 7294242 | Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing... | 11/13/2007 |
| 7279845 | Plasma processing method and apparatus A method and apparatus for processing a target substance by using atmospheric-pressure plasma produced by a composite waveform generated by superimposing a high-frequency sine wave and a high-frequency square wave at the same or substantially the same frequency and ... | 10/09/2007 |
| 7247221 | System and apparatus for control of sputter deposition process A method and apparatus for sputter deposition in which both a pulsed DC power supply and an RF power supply apply power to the target in the sputter deposition equipment. The pulsed DC power supply provides an on cycle where power is applied to the target, and an of... | 07/24/2007 |
| 7232506 | System and method for feedforward control in thin film coating processes A system and method for feedforward control in thin film coating processes. A standard PID feedback control system that continuously monitors two or more process variables in a reactive sputtering process is combined with a feedforward control system to improve syst... | 06/19/2007 |
| 7214554 | Monitoring the deposition properties of an OLED A method for making an OLED device includes providing a substrate having one or more test regions and one or more device regions, moving the substrate into a least one deposition chamber for deposition of at least one organic layer, and depositing the at least one o... | 05/08/2007 |
| 7204915 | Patterned medium, method for fabricating same and method for evaluating same A process for fabricating a patterned medium including a dot-forming step for forming a dot array constituted by sample magnetic dots having a predetermined size such as a single domain particle size determined theoretically from the magnetic metal thin for a sample... | 04/17/2007 |
| 7192505 | Wafer probe for measuring plasma and surface characteristics in plasma processing environments There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integ... | 03/20/2007 |
| 7186319 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped... | 03/06/2007 |
| 7182842 | Device for amplifying the current of an abnormal electrical discharge and system for using an abnormal electrical discharge comprising one such device A device (1) for amplifying the current of an abnormal electrical discharge, characterized in that it comprises an electrode which is positively polarized (2) and associated with a magnetic circuit (3) producing a magnetic field (4) which... | 02/27/2007 |
| 7179352 | Vacuum treatment system and process for manufacturing workpieces A process is disclosed for manufacturing coated substantially plane workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with th... | 02/20/2007 |
| 7172675 | Observation window of plasma processing apparatus and plasma processing apparatus using the same An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processi... | 02/06/2007 |
| 7147747 | Plasma processing apparatus and plasma processing method A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The... | 12/12/2006 |
| 7147748 | Plasma processing method A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that a... | 12/12/2006 |
| 7147759 | High-power pulsed magnetron sputtering Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source... | 12/12/2006 |
| 7105059 | Reaction apparatus for atomic layer deposition A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas,... | 09/12/2006 |
| 7105080 | Vacuum treatment system and method of manufacturing same Method for manufacturing a workpiece by a vacuum treatment process includes providing a vacuum treatment system with first second parts in a vacuum chamber. Either a sensor or an adjusting element with first signal connection is mounted on the second part. An electr... | 09/12/2006 |
| 7101799 | Feedforward and feedback control for conditioning of chemical mechanical polishing pad A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioni... | 09/05/2006 |
| 7087142 | Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providi... | 08/08/2006 |
| 7077159 | Processing apparatus having integrated pumping system An apparatus 115 for processing a substrate 20, comprises an integrated pumping system 155 having a high operating efficiency, small size, and low vibrational and noise levels. The apparatus 115 comprises a chamber, such as a load-lock ch... | 07/18/2006 |
| 7070657 | Method and apparatus for depositing antireflective coating This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that d... | 07/04/2006 |
| 7063773 | High purity sputter targets with target end-of-life indication and method of manufacture A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the tar... | 06/20/2006 |
| 7048837 | End point detection for sputtering and resputtering Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered dep... | 05/23/2006 |
| 7033461 | Thin film forming apparatus and method The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness... | 04/25/2006 |
| 7025895 | Plasma processing apparatus and method A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-... | 04/11/2006 |
| 7016795 | Signal improvement in eddy current sensing Improved endpoint detection and/or thickness measurements may be obtained by correcting sensor data using calibration parameters and/or drift compensation parameters. Calibration parameters may include an offset and a slope, or other parameters. Drift compensation p... | 03/21/2006 |
| 7008518 | Method and apparatus for monitoring optical characteristics of thin films in a deposition process The present invention is directed at least in part to methods and apparatus for optically monitoring selected optical characteristics of coatings formed on substrates during the deposition process and controlling the deposition process responsive thereto. In one asp... | 03/07/2006 |
