Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7892406 | Ionized physical vapor deposition (iPVD) process An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizi... | 02/22/2011 |
| 7883607 | Methods of ion milling for magnetic heads and systems formed thereby A method according to one embodiment includes ion milling at a first angle of greater than about 25 degrees from normal relative to a media facing side of a thin film region of a magnetic head or component thereof for recessing the thin film region at about a consta... | 02/08/2011 |
| 7423957 | Optical information recording medium and method of manufacturing thereof, manufacturing apparatus, recording/reproducing method, and recording/reproducing apparatus The present invention provides an optical information recording medium of excellent signal quality in high density recording onto a semitransparent information layer, its manufacturing method and a manufacturing apparatus. The optical information recording medium of... | 09/09/2008 |
| 7403095 | Thin film resistor structure and method of fabricating a thin film resistor structure A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) l... | 07/22/2008 |
| 7386934 | Double layer patterning and technique for milling patterns for a servo recording head Double photolithography is used to produce an under-layer of protective and filtering photoresist over a substrate that will have channels milled with a FIB. Secondary layers are applied with precision on top of the first layer in order to define the precise pattern... | 06/17/2008 |
| 7378003 | Thin-film magnetic recording head manufacture using selective imaging A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding l... | 05/27/2008 |
| 7367999 | Ultrafine particles and method and apparatus for producing the same A method of producing ultrafine particles by vaporization comprising: vaporizing a target by sputtering; causing particles that fly from the target by vaporization to be deposited on an oil surface; and recovering the oil on which the flown particles have deposited ... | 05/06/2008 |
| RE40264 | Multi-temperature processing The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to... | 04/29/2008 |
| 7338887 | Plasma control method and plasma control apparatus A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the varia... | 03/04/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| H2209 | Large area metallization pretreatment and surface activation system A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radi... | 02/05/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7320170 | Xenon ion beam to improve track width definition Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has... | 01/22/2008 |
| 7316764 | System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with a... | 01/08/2008 |
| 7315128 | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface... | 01/01/2008 |
| 7313854 | Method of manufacturing a tactile sensor A method of manufacturing a tactile sensor, which is capable of implementing a wide range of senses, including sensing contact pressure (vertical force and horizontal force) with an external object and heat caused by the contact pressure, comprises forming a side bl... | 01/01/2008 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7300684 | Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum sou... | 11/27/2007 |
| 7294565 | Method of fabricating a wire bond pad with Ni/Au metallization A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN... | 11/13/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7294438 | Method of producing a reflective mask and method of producing a semiconductor device This invention is a method of producing a reflective mask comprising a substrate, a reflective multilayer film formed on the substrate to reflect exposure light, and at least one layer formed on the reflective multilayer film to define a nonreflecting region for the... | 11/13/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7291185 | Method of manufacturing both-side metallized film with reduced blocking of metallized film and metallized film capacitor using the same A method of manufacturing a both-side metallized insulation film comprises steps of: depositing zinc or a blend of zinc and aluminum onto both sides of an insulation film; and winding this metallized film into a product roll. The method is characterized in spraying ... | 11/06/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7285916 | Multi chamber plasma process system A multi-chamber plasma process system includes a plurality of process chambers, each of which has an inductively coupled plasma generator. The inductively coupled plasma generator is electrically connected to a main power supply through a first impedance matcher. Th... | 10/23/2007 |
| 7270729 | System for, and method of, etching a surface on a wafer First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to... | 09/18/2007 |
| 7262136 | Modified facet etch to prevent blown gate oxide and increase etch chamber life A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the ... | 08/28/2007 |
| 7259372 | Processing method using probe of scanning probe microscope A processing method uses a probe of a scanning probe microscope. A fine marker is formed in a processing material by thrusting the probe, which is made of a material harder than the processing material, into a portion of the processing material disposed in the vicin... | 08/21/2007 |
| 7256848 | Method and apparatus of alligning liquid crystal In a method and apparatus of aligning liquid crystal, a first ion beam is formed. The first ion beam is transformed into a second ion beam having transformed cross-section. The second ion beam advances toward a thin film including carbon-carbon double bond. The seco... | 08/14/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7241397 | Honeycomb optical window deposition shield and method for a plasma processing system An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspec... | 07/10/2007 |
| 7238294 | Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at l... | 07/03/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7223716 | Ceramic support capable of supporting a catalyst, a catalyst-ceramic body and processes for producing same A ceramic support capable of supporting a catalyst comprising a ceramic body having fine pores with a diameter or width up to 1000 times the ion diameter of a catalyst component to be supported on the surface of the ceramic body, the number of the fine pores being n... | 05/29/2007 |
| 7223701 | In-situ sequential high density plasma deposition and etch processing for gap fill During microelectronic processing of a substrate, a gap on the substrate surface may be filled with a material by alternating deposition and etch processes while the substrate remains in the same process chamber. Alternating deposition and etch processes allows the ... | 05/29/2007 |
