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| Number | Title | Issue Date |
| 8066853 | Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus A method of forming an inorganic alignment film made substantially of an inorganic material on a base substrate is provided comprising a milling process of irradiating ion beams onto the surface of the base substrate, on which the inorganic alignment film is to be f... | 11/29/2011 |
| 7901545 | Ionized physical vapor deposition (iPVD) process An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizi... | 03/08/2011 |
| 7820020 | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the... | 10/26/2010 |
| 7427568 | Method of forming an interconnect structure A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ... | 09/23/2008 |
| 7410590 | Transferable micro spring structure A method for mounting the micro spring structures onto cables or contact structures includes forming a spring island having an “upside-down” stress bias on a first release material layer or directly on a substrate, forming a second release material over at least... | 08/12/2008 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7399388 | Sequential gas flow oxide deposition technique A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the si... | 07/15/2008 |
| 7399539 | DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same A magneto-optic recording medium has a stacked structure composed of a memory layer, a domain wall displacement layer having domain wall-resistant magnetism smaller than the memory layer, and a switching layer having a lower Curie temperature than these layers inter... | 07/15/2008 |
| 7341940 | Method for forming metal wirings of semiconductor device A method of forming metal wirings for a semiconductor device. A first etch stop layer, an dielectric layer, a second etch stop layer, and a wiring layer are deposited on a semiconductor substrate. A hole is formed by etching the wiring layer, the first etch stop lay... | 03/11/2008 |
| 7338581 | Sputtering apparatus A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a pl... | 03/04/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7335426 | High strength vacuum deposited nitinol alloy films and method of making same A vacuum deposition method for fabricating high-strength nitinol films by sputter depositing nickel and titanium from a heated sputtering target, and controlling the sputter deposition process parameters in order to create high-strength nitinol films that exhibit sh... | 02/26/2008 |
| 7332736 | Article comprising gated field emission structures with centralized nanowires and method for making the same This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nano... | 02/19/2008 |
| 7327033 | Copper alloy via bottom liner Improved mechanical and adhesive strength and resistance to breakage of copper integrated circuit interconnections is obtained by forming a copper alloy in a copper via/wiring connection in an integrated circuit while minimizing adverse electrical effects of the all... | 02/05/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7320815 | Method for forming oriented film, oriented film, substrate for electronic device, liquid crystal panel, and electronic device A method for forming an oriented film is provided for forming an oriented film on a base material by irradiating the surface of the base material where the oriented film will be formed with an ion beam comprising nitrogen ions from a direction inclined at a prescrib... | 01/22/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7300457 | Self-supporting metallic implantable grafts, compliant implantable medical devices and methods of making same Implantable medical grafts fabricated of metallic or pseudometallic films of biocompatible materials having a plurality of microperforations passing through the film in a pattern that imparts fabric-like qualities to the graft or permits the geometric deformation of... | 11/27/2007 |
| 7300684 | Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum sou... | 11/27/2007 |
| 7294578 | Use of a plasma source to form a layer during the formation of a semiconductor device A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further com... | 11/13/2007 |
| 7294241 | Method to form alpha phase Ta and its application to IC manufacturing A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. pr... | 11/13/2007 |
| 7294242 | Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing... | 11/13/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7284461 | Colored razor blades Colored razor blades are provided. Methods for manufacturing such blades are also provided, including methods involving subjecting a blade material to a hardening process; and, during the hardening process, oxidizing the blade material to form an oxide layer on the ... | 10/23/2007 |
| 7282308 | Phase shifter film and process for the same In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide base... | 10/16/2007 |
| 7276795 | Small grain size, conformal aluminum interconnects and method for their formation A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mi... | 10/02/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7261914 | Method and apparatus for forming a nitride layer on a biomedical device This invention is a method of forming a nitride layer on at least one metal or metal alloy biomedical device, comprising: providing a vacuum chamber with at least one biomedical device positioned thereon on a worktable within the vacuum chamber; reducing the pressur... | 08/28/2007 |
| 7261797 | Passive bipolar arc control system and method A method and system for controlling arcs in a DC sputtering system with a passive circuit is presented. The arc control system includes a sputtering chamber that houses an anode and a sputtering target formed from a target material and serving as a cathode. A DC pow... | 08/28/2007 |
| 7262136 | Modified facet etch to prevent blown gate oxide and increase etch chamber life A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the ... | 08/28/2007 |
| 7256121 | Contact resistance reduction by new barrier stack process The present invention provides a method for forming an interconnect on a semiconductor substrate 100. The method includes forming an opening 230 over an inner surface of the opening 130, the depositing forming a reentrant profile near a top port... | 08/14/2007 |
| 7253109 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 08/07/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
