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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 8012316 | FCC-like trilayer AP2 structure for CPP GMR EM improvement A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX | 09/06/2011 |
| 7371282 | Solid solution wide bandgap semiconductor materials A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor depo... | 05/13/2008 |
| 7361406 | Ultra-high current density thin-film Si diode A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the b... | 04/22/2008 |
| 7256076 | Manufacturing method of liquid crystal display device A manufacturing method of a thin film transistor of a liquid crystal display device using 3-mask includes forming a gate electrode over a substrate, consecutively forming a gate insulating layer and an active layer, forming a first photoresist pattern, removing an a... | 08/14/2007 |
| 7250330 | Method of making an electronic package A method of making an electronic package is described, wherein a substrate is provided with a pattern of conductive pads and a portion of solder positioned on selected ones of the pattern of copper pads. The solder is then reflowed to form partial hemispherically sh... | 07/31/2007 |
| 7238393 | Method of forming silicon carbide films A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reac... | 07/03/2007 |
| 7226524 | Plasma processing apparatus A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for s... | 06/05/2007 |
| 7212078 | Method and assembly for providing impedance matching network and network assembly An impedance matching network and network assembly employ one or more variable inductive elements, wherein one or more of the variable inductive elements includes a high temperature ferrite core, a helical coil, and a means for physically translating the magnetic co... | 05/01/2007 |
| 7192647 | Concentration-modulated coatings The invention provides a substrate bearing a low-emissivity coating. The low-emissivity coating comprises at least one graded film region. In certain embodiments, at least one graded film region is provided between the two infrared-reflective layers of a double-type... | 03/20/2007 |
| 7179350 | Reactive sputtering of silicon nitride films by RF supported DC magnetron An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from t... | 02/20/2007 |
| 7154147 | Electro-optical device and driving method for the same A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected ... | 12/26/2006 |
| 7146722 | Method of forming a bond pad structure A bond pad structure comprising two bond pads, methods of forming the bond pad structure, an integrated circuit die incorporating the bond pad structure, and methods of using the bond pad structure are provided. Each of the bond pads comprise stacked metal layers, a... | 12/12/2006 |
| 7096819 | Inductive plasma processor having coil with plural windings and method of controlling plasma density An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having dif... | 08/29/2006 |
| 7037595 | Thin hafnium oxide film and method for depositing same A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm... | 05/02/2006 |
| 6961503 | Planar lightwave circuit device and manufacturing method therefor A manufacturing method for a planar lightwave circuit device. A lift-off mask layer is formed on a planar lightwave circuit composed of cores and a cladding. The lift-off mask layer is next exposed to light by using a mask having a plurality of first patterns respec... | 11/01/2005 |
| 6953741 | Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process Methods for fabricating a contact of a semiconductor device are provided by patterning an interlayer dielectric of the semiconductor device to form a contact hole that exposes a silicon-based region of a first impurity type. The exposed silicon-based region is doped... | 10/11/2005 |
| 6949463 | Method of making iron silicide and method of making photoelectric transducer A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this ord... | 09/27/2005 |
| 6902683 | Plasma processing apparatus and plasma processing method A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment... | 06/07/2005 |
| 6903014 | Low temperature reflow method for filling high aspect ratio contacts Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling character... | 06/07/2005 |
| 6887353 | Tailored barrier layer which provides improved copper interconnect electromigration resistance Disclosed herein is a barrier layer structure useful in forming copper interconnects and electrical contacts of semiconductor devices. The barrier layer structure comprises a first layer of TaNx which is applied directly over the substrate, followed by a ... | 05/03/2005 |
| 6758947 | Damage-free sculptured coating deposition We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a d... | 07/06/2004 |
| 6756161 | Ion-beam deposition process for manufacture of binary photomask blanks An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths | 06/29/2004 |
| 6756160 | Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180°, and which can provide tunable optical transmission at selected lithographic wavelengths | 06/29/2004 |
| 6746960 | Electronic techniques for analyte detection Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte (1810) is sensed by sensors (1820) that output electrical signals in response to the analyte. The electrical si... | 06/08/2004 |
| 6726812 | Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position where said target is capable of exposing said ion beam irradiated in sai... | 04/27/2004 |
| 6722942 | Chemical mechanical polishing with electrochemical control Various embodiments of a planarization device and methods of using the same are provided. In one aspect, a device for planarizing a surface of a semiconductor workpiece is provided that includes a table for holding a quantity of an electrically conducting solution t... | 04/20/2004 |
| 6652717 | Use of variable impedance to control coil sputter distribution Variable reactances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and th... | 11/25/2003 |
| 6632583 | Optical recording medium and production method of the same The present invention relates to an optical recording medium having a protective layer and a phase-change recording layer on a substrate, said protective layer containing a metallic oxysulfide and an optical recording medium having a protective layer and ... | 10/14/2003 |
| 6599399 | Sputtering method to generate ionized metal plasma using electron beams and magnetic field A deposition system in a semiconductor fabrication system provides at least one electron gun which injects energetic electrons into a semiconductor fabrication chamber to initiate and sustain a relatively high density plasma at extremely low pressures. In... | 07/29/2003 |
| 6579426 | Use of variable impedance to control coil sputter distribution Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film ... | 06/17/2003 |
| 6555221 | Method for forming an ultra microparticle-structure A method for forming an ultra microparticle-structure composed of ultra microparticles including the steps of: forming on a substrate higher wettability parts and lower wettability parts to a material to be deposited, depositing on the substrate the material t... | 04/29/2003 |
| 6537429 | Diamond coatings on reactor wall and method of manufacturing thereof A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.... | 03/25/2003 |
| 6533907 | Method of producing amorphous silicon for hard mask and waveguide applications A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semico... | 03/18/2003 |
| 6500314 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 12/31/2002 |
| 6451179 | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma Increased sidewall coverage in a wetting layer for a substrate via or trench is achieved in an inductively coupled plasma chamber by sputtering relatively pure aluminum.... | 09/17/2002 |
| 6440276 | Process for producing thin film gas sensors with dual ion beam sputtering A process for making a stoichiometric and crystalline thin film CuO catalytic layer atop a gas sensing layer for the detection of dilute sulfur compound gases. The sensing layer is made using dual ion beam sputtering, where an argon ion beam sputters targ... | 08/27/2002 |
| 6398925 | Methods and apparatus for producing silver based low emissivity coatings without the use of metal primer layers and articles produced thereby Methods are presented for depositing an infrared reflective, e.g., silver, containing multi-layer coating onto a substrate to form a coated article. One or more ceramic cathodes are used to deposit a protective layer over the silver layer. The use of the ... | 06/04/2002 |
| 6358378 | Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the ... | 03/19/2002 |
| 6333111 | Method of producing layered aluminum fine particles and use thereof The present invention provides a method for producing layered aluminum fine particles, and applications to single electron tunneling quantum devices, and the present invention further relates to a method for producing spherical metallic aluminum fine part... | 12/25/2001 |
| 6323417 | Method of making I-III-VI semiconductor materials for use in photovoltaic cells Provided is a method for making layers of I-III-VI semiconductor materials for use in photovoltaic cells, and particularly for making CIS and variations on CIS, such as CIGS and CIGSS. The method includes formation of a plurality of precursor films of the... | 11/27/2001 |
