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| Number | Title | Issue Date |
| 8062484 | Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing th... | 11/22/2011 |
| 7837837 | Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. Th... | 11/23/2010 |
| 7749361 | Multi-component doping of copper seed layer A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examp... | 07/06/2010 |
| 7678241 | Film forming apparatus, substrate for forming oxide thin film and production method thereof The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side withi... | 03/16/2010 |
| 7588667 | Depositing rhuthenium films using ionized physical vapor deposition (IPVD) An iPVD system is programmed to deposit a barrier and/or seed layer using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s)... | 09/15/2009 |
| 7431811 | Ruthenium oxide electrodes and fabrication method thereof A ruthenium oxide electrode. The ruthenium oxide electrode includes a substrate, a ruthenium oxide film formed thereon, and a conductive wire connecting to the ruthenium oxide film. The invention also provides a method of fabricating the ruthenium oxide electrode. | 10/07/2008 |
| 7407565 | Method and apparatus for ionized plasma deposition A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral ... | 08/05/2008 |
| 7378002 | Aluminum sputtering while biasing wafer An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter... | 05/27/2008 |
| 7368343 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 05/06/2008 |
| 7364932 | Electronic device and method of manufacturing the same In the present invention, an etching hole 21 is formed in a polysilicon film 14 as a cavity-wall member. Through the etching hole 21, hydrofluoric acid is injected, so as to dissolve a silicon oxide film 13, thereby forming a cavity 22... | 04/29/2008 |
| 7352021 | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed p... | 04/01/2008 |
| 7341908 | Semiconductor device and method of manufacturing the same Provided are a semiconductor device including a reliable interconnect and a method of manufacturing the same. The semiconductor device includes a substrate, an inter-metal dielectric (IMD) pattern having an opening, an amorphous metallic nitride layer formed on the ... | 03/11/2008 |
| 7338581 | Sputtering apparatus A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a pl... | 03/04/2008 |
| 7335570 | Method of forming insulating films, capacitances, and semiconductor devices Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputter... | 02/26/2008 |
| 7335282 | Sputtering using an unbalanced magnetron A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w... | 02/26/2008 |
| 7329934 | Smooth metal semiconductor surface and method for making the same A method for reducing the surface roughness of a metal layer is provided. In some embodiments, the method may include polishing the metal layer to a level substantially above any layers arranged directly beneath the metal layer. In some cases, the semiconductor topo... | 02/12/2008 |
| 7325294 | Method of making electromagnetic wave shielded write and read wires on a support for a magnetic media drive A method of making electromagnetic wave shielded read and write wires is provided. The method includes forming a bottom insulation layer on a bottom shield layer formed on a substrate. Then, forming electrically conductive wire material into openings in a first form... | 02/05/2008 |
| 7316867 | Method for manufacturing a multi-layered thin film for use as an anode in a lithium secondary battery A thin film for an anode of a lithium secondary battery having a current collector and an anode active material layer formed thereon is provided. The anode active material layer is a multi-layered thin film formed by stacking a silver (Ag) layer and a silicon-metal ... | 01/08/2008 |
| 7311946 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially... | 12/25/2007 |
| 7309842 | Shielded monolithic microplasma source for prevention of continuous thin film formation A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap la... | 12/18/2007 |
| 7303939 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 12/04/2007 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7300557 | Device for targeted application of deposition material to a substrate The invention relates to a device for the targeted application of deposition material onto a substrate, especially for focusing the sputter flux onto a narrow angular range in a PVD-system. The invention is characterized in that the deposition material is directed t... | 11/27/2007 |
| 7294574 | Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed depos... | 11/13/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7294241 | Method to form alpha phase Ta and its application to IC manufacturing A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. pr... | 11/13/2007 |
| 7291251 | Method of making coated article with IR reflecting layer(s) using krypton gas A method of making a coated article is provided, where the coated article may be used in a window or the like and may have at least one infrared (IR) reflecting layer in a low-E coating. The IR reflecting layer may be of silver or the like. In certain example embodi... | 11/06/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7282387 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 10/16/2007 |
| 7282445 | Multiple seed layers for interconnects One embodiment of the present invention is a method for depositing two or more seed layers over a substrate, the substrate includes a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening and the field being ... | 10/16/2007 |
| 7279201 | Methods and apparatus for forming precursors This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to ... | 10/09/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7276795 | Small grain size, conformal aluminum interconnects and method for their formation A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mi... | 10/02/2007 |
| 7271091 | Method for forming metal pattern to reduce contact resistivity with interconnection contact A method for forming a metal pattern in a semiconductor device which is capable of reducing contact resistivity with an interconnection contact. The method includes forming a tungsten interconnection contact passing through a lower insulating layer on a semiconducto... | 09/18/2007 |
| 7268076 | Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int... | 09/11/2007 |
| 7264988 | Electro-and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 09/04/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7262130 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have... | 08/28/2007 |
| 7253521 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in combination with diffusion barriers, rather than aluminum, to form the wi... | 08/07/2007 |
| 7253109 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 08/07/2007 |
