Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 7416633 | Plasma processing apparatus Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surr... | 08/26/2008 |
| 7338699 | Island projection-modified part, method for producing the same, and apparatus comprising the same In film-forming devices and plasma-processing devices, filmy matter adheres to the surfaces of the inner parts and it peels to cause dust and particles in the devices. In the devices, the dust and particles contaminate the objects for film formation thereon or the o... | 03/04/2008 |
| 7316761 | Apparatus for uniformly etching a dielectric layer Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solen... | 01/08/2008 |
| 7294224 | Magnet assembly for plasma containment A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar,... | 11/13/2007 |
| 7293526 | Plasma reaction chamber liner consisting essentially of osmium The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 11/13/2007 |
| 7182816 | Particulate reduction using temperature-controlled chamber shield Particle flaking is reduced in a semiconductor wafer processing apparatus by installing a chamber shield assembly in the chamber of the apparatus. The shield assembly includes a plurality of nested shields that are supported out of contact with each other and suspen... | 02/27/2007 |
| 7147749 | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with su... | 12/12/2006 |
| 7137353 | Method and apparatus for an improved deposition shield in a plasma processing system The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with su... | 11/21/2006 |
| 7055212 | Clean gas injector system for reactor chamber An improvement to a Novellus HDP SPEED reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the ... | 06/06/2006 |
| 6984288 | Plasma processor in plasma confinement region within a vacuum chamber A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a refe... | 01/10/2006 |
| 6933025 | Chamber having components with textured surfaces and method of manufacture A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on... | 08/23/2005 |
| 6802933 | Apparatus for performing self cleaning method of forming deep trenches in silicon substrates This invention is directed to a method for etching films on semiconductor substrates and cleaning etch chambers. The method includes an improved processing sequence and cleaning method where residue formed from processing a previous substrate are cleaned by the etch... | 10/12/2004 |
| 6777045 | Chamber components having textured surfaces and method of manufacture A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the diel... | 08/17/2004 |
| 6733829 | Anti-binding deposition ring A deposition ring which has a cut out on its interior circumferential edge. The deposition ring is configured to contact an edge of an electrostatic chuck and shield at least a portion of the electrostatic chuck during a deposition process wherein material is deposi... | 05/11/2004 |
| 6647918 | Double slit-valve doors for plasma processing In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substra... | 11/18/2003 |
| 6645585 | Container for treating with corrosive-gas and plasma and method for manufacturing the same There is provided a treatment container which enables to prolong a period of time taken for reaction products, such as a halide generated through reaction with corrosive halide gas, to exfoliate and fall down as particles, and decreases the frequency of p... | 11/11/2003 |
| 6394026 | Low contamination high density plasma etch chambers and methods for making the same A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. T... | 05/28/2002 |
| 6328041 | Universal cleaning wafer for a plasma chamber A cleaning wafer is used during the vaporization of particulate deposits that were previously deposited on the walls of a plasma chamber. The cleaning wafer includes a first dielectric layer, a conducting layer and a second dielectric layer covering the c... | 12/11/2001 |
| 6329297 | Dilute remote plasma clean A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture bef... | 12/11/2001 |
| 6312569 | Chemical vapor deposition apparatus and cleaning method thereof A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The a... | 11/06/2001 |
| 6286453 | Shield design for IBC deposition A device for reducing the contamination of a disc being coated during an ion beam deposition process. The ion beam deposition process is performed in a chamber having an upper portion and a lower portion with the disc being disposed in the lower portion o... | 09/11/2001 |
| 6277237 | Chamber liner for semiconductor process chambers A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during ... | 08/21/2001 |
| 6264788 | Plasma treatment method and apparatus A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first f... | 07/24/2001 |
| 6251216 | Apparatus and method for plasma processing A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with prote... | 06/26/2001 |
| 6231674 | Wafer edge deposition elimination This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside,... | 05/15/2001 |
| 6223684 | Film deposition apparatus A film deposition apparatus includes a vacuum chamber, a gas supplier, a gas exhauster, and a discharging means, the film deposition apparatus forming a deposited film on a substrate provided in the vacuum chamber by a plasma enhanced CVD process, wherein... | 05/01/2001 |
| 6221202 | Efficient plasma containment structure Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the cross-sectional dimensions parallel to the plate surface th... | 04/24/2001 |
| 6200412 | Chemical vapor deposition system including dedicated cleaning gas injection A plasma-enhanced chemical vapor deposition system includes a number of process gas injection tubes and at least one dedicated clean gas injection tube. A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning i... | 03/13/2001 |
| 6187132 | Substrate treatment device and substrate transporting method A substrate treatment device comprises a transporting arm for transporting a substrate within the treatment device, a supporting member, which is disposed on the transporting arm, for supporting the substrate, and a cleaning mechanism, which is installed ... | 02/13/2001 |
| 6184489 | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to whic... | 02/06/2001 |
| 6173674 | Plasma reactor with a deposition shield A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can b... | 01/16/2001 |
| 6170431 | Plasma reactor with a deposition shield A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can b... | 01/09/2001 |
| 6159333 | Substrate processing system configurable for deposition or cleaning An apparatus for processing substrates that is configured for a cleaning operation by loading a cleaning process wafer onto the susceptor before forming a cleaning plasma in the processing chamber. In one embodiment, a ceramic wafer is chosen to have a di... | 12/12/2000 |
| 6143128 | Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof A contact cleaning apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 8... | 11/07/2000 |
| 6139681 | Plasma assisted process vessel cleaner A system and method for removing plasma contaminants from a vacuum vessel requires circulating a fluid through the vacuum vessel and thereby exposing the fluid to the contaminants. When the contaminants contact the fluid, they are trapped and become suspe... | 10/31/2000 |
| 6132566 | Apparatus and method for sputtering ionized material in a plasma An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the ... | 10/17/2000 |
| 6125859 | Method for improved cleaning of substrate processing systems A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas sou... | 10/03/2000 |
| 6117244 | Deposition resistant lining for CVD chamber A deposition resistant lining assembly is provided for a chemical vapor deposition chamber, the deposition resistant lining assembly including a first ceramic liner for mounting adjacent a substrate holder within the chemical vapor deposition chamber to p... | 09/12/2000 |
| 6109206 | Remote plasma source for chamber cleaning The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zon... | 08/29/2000 |
| 6079426 | Method and apparatus for determining the endpoint in a plasma cleaning process Apparatus and methods are disclosed for utilizing a plasma cleaning operation of a CVD system incorporating cleaning process endpoint detection. In one embodiment, the cleaning process is performed at a constant exhaust capacity and the endpoint detection... | 06/27/2000 |
