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| Number | Title | Issue Date |
| 7867356 | Apparatus for reducing polymer deposition on a substrate and substrate support An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.... | 01/11/2011 |
| 7430986 | Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes ... | 10/07/2008 |
| 7396432 | Composite shadow ring assembled with dowel pins and method of using A composite shadow ring that is constructed of an upper ring and a lower ring assembled together by a plurality of dowel pins and a method for using the ring. The upper ring and the lower ring each has a predetermined outside diameter that is substantially the same,... | 07/08/2008 |
| 7381293 | Convex insert ring for etch chamber A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap ... | 06/03/2008 |
| 7364623 | Confinement ring drive A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of c... | 04/29/2008 |
| 7338578 | Step edge insert ring for etch chamber An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped cross-sectional configuration which defines a perpendicular gap or flow space ... | 03/04/2008 |
| 7335278 | Plasma processing apparatus and plasma processing method An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b | 02/26/2008 |
| 7252738 | Apparatus for reducing polymer deposition on a substrate and substrate support An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.... | 08/07/2007 |
| 7211170 | Twist-N-Lock wafer area pressure ring and assembly Wafer area pressure rings used to confine plasma in plasma processing chambers which are manufactured with bores therein such that replacement of the pressure rings during routine or repair maintenance is significantly eased. The bores allows the pressure rings to b... | 05/01/2007 |
| 7181306 | Enhanced plasma etch process A method of operating a plasma etcher wherein gas is introduced into the etcher at a substantially higher rate than a previous standard rate for a desired etch selectivity, and the throttle valve's open value is set to a substantially greater open value than a previ... | 02/20/2007 |
| 7102872 | Electrostatic chuck An ESC (Electrostatic Chuck) to chuck an object by electrostatic force, having an ESC main body supporting the object; a guide ring supported by the ESC main body and encircling the object; a dielectric material layer interposed between the guide ring and the ESC ma... | 09/05/2006 |
| 7025858 | Apparatus for supporting wafer in semiconductor process The present invention provides an apparatus for supporting a wafer in a semiconductor process. The apparatus includes an electrostatic chuck, a focus ring and a conductive material. The electrostatic chuck has a first fillister in its periphery. When a DC power is a... | 04/11/2006 |
| 6955720 | Plasma deposition of spin chucks to reduce contamination of Silicon wafers An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support s... | 10/18/2005 |
| 6936135 | Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber A confinement ring coupling arrangement for coupling, in a plasma processing chamber, a confinement ring to a plunger. The plunger is configured to move the confinement ring to deploy and stow the confinement ring to facilitate processing of a substrate within the p... | 08/30/2005 |
| 6926803 | Confinement ring support assembly A confinement ring support assembly for coupling together a plurality of confinement rings in a plasma processing chamber. The confinement ring support assembly includes a post having first end and a second end. The post further includes a first lip having an associ... | 08/09/2005 |
| 6830622 | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium ox... | 12/14/2004 |
| 6733829 | Anti-binding deposition ring A deposition ring which has a cut out on its interior circumferential edge. The deposition ring is configured to contact an edge of an electrostatic chuck and shield at least a portion of the electrostatic chuck during a deposition process wherein material is deposi... | 05/11/2004 |
| 6733624 | Apparatus for holding an object to be processed An apparatus for holding an object to be processed, according to this invention is mounted in a plasma processing apparatus and includes a convex-shaped holder main body, first dielectric film, and second dielectric film. The holder main body has a holding portion w... | 05/11/2004 |
| 6723202 | Worktable device and plasma processing apparatus for semiconductor process A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and s... | 04/20/2004 |
| 6709547 | Moveable barrier for multiple etch processes A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically dri... | 03/23/2004 |
| 6663714 | CVD apparatus The present invention is to provide a CVD apparatus having a high productivity, involving less contamination on the back surface of a substrate and having a high yield. A CVD apparatus for forming a thin film is characterized in that the interior of the v... | 12/16/2003 |
| 6656286 | Pedestal with a thermally controlled platen A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece su... | 12/02/2003 |
| 6649077 | Method and apparatus for removing coating layers from alignment marks on a wafer A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then pro... | 11/18/2003 |
| 6623597 | Focus ring and apparatus for processing a semiconductor wafer comprising the same An apparatus for processing a semiconductor wafer has a circular chuck and a focus ring. The chuck is located in a process chamber and holds the semiconductor wafer. The focus ring surrounds the semiconductor wafer held by the chuck and focuses processing... | 09/23/2003 |
| 6506687 | Dry etching device and method of producing semiconductor devices A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especi... | 01/14/2003 |
| 6489249 | Elimination/reduction of black silicon in DT etch In a method of etching a wafer in a plasma etch reactor, the improvement of conducting etching to reduce or eliminate "black silicon" comprising: a) providing a plasma etch reactor comprising walls defining an etch chamber; b) providing a plasma source chamber... | 12/03/2002 |
| 6344105 | Techniques for improving etch rate uniformity Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The inv... | 02/05/2002 |
| 6306244 | Apparatus for reducing polymer deposition on substrate support In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between... | 10/23/2001 |
| 6290806 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the w... | 09/18/2001 |
| 6284093 | Shield or ring surrounding semiconductor workpiece in plasma chamber A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135... | 09/04/2001 |
| 6257168 | Elevated stationary uniformity ring design A plasma processing reactor for processing a semiconductor substrate is disclosed. The apparatus includes a chamber. Additionally, the chamber includes a bottom electrode that is configured for holding the substrate. The apparatus further includes a stati... | 07/10/2001 |
| 6189483 | Process kit The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zon... | 02/20/2001 |
| 6178919 | Perforated plasma confinement ring in plasma reactors The invention relates to a plasma processing reactor apparatus for semiconductor processing a substrate. The apparatus includes a chamber. The apparatus further includes a top electrode configured to be coupled to a first RF power source having a first RF... | 01/30/2001 |
| 6125788 | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter The invention improves etch uniformity across a silcon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer ed... | 10/03/2000 |
| 6096161 | Dry etching apparatus having means for preventing micro-arcing A dry etching apparatus used for manufacture of a semiconductor device includes a plasma confinement ring secured by screws to a cathode, an anode, and a metal focusing ring extending around the anode for enhancing the uniformity of the plasma. The screws... | 08/01/2000 |
| 6039836 | Focus rings An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electro... | 03/21/2000 |
| 6019060 | Cam-based arrangement for positioning confinement rings in a plasma processing chamber A cam-based arrangement configured to move a confinement ring along a first axis of a plasma processing chamber. The confinement ring is disposed in a plane that is orthogonal to the first axis. The cam-based arrangement includes a cam ring having a plura... | 02/01/2000 |
| 6008130 | Polymer adhesive plasma confinement ring A plasma confinement ring comprising a first generally planar surface; a second generally planar surface; an aperture extending between the first and second surfaces, the aperture including an annular surface, and a curved surface extending between the an... | 12/28/1999 |
| 5976310 | Plasma etch system Disclosed is a system, including both method and apparatus, for enhancing the plasma etching of a semiconductor wafer. The system enhances etchant uniformity while greatly reducing plasma contamination. Etching is performed in a housing for processing a s... | 11/02/1999 |
| 5942039 | Self-cleaning focus ring An electrically activated focus ring (90) for plasma processing a substrate (25) in a plasma zone comprises a dielectric barrier (92) with a plasma focusing surface (95) for focusing the plasma onto the substrate surface, and an opposing surface (98). The... | 08/24/1999 |
