Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 7935218 | Optical apparatus, lithographic apparatus and device manufacturing method An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second... | 05/03/2011 |
| 7367138 | Devices and methods for thermophoretic and electrophoretic reduction of particulate contamination of lithographic reticles Apparatus and methods are disclosed for reducing particle contamination of a surface of an object such as a reticle used in an EUV lithography system. An exemplary apparatus includes a thermophoresis device and an electrophoresis device. The thermophoresis device is... | 05/06/2008 |
| H2212 | Method and apparatus for producing an ion-ion plasma continuous in time An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The hig... | 04/01/2008 |
| 7276140 | Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet... | 10/02/2007 |
| 7262555 | Method and system for discretely controllable plasma processing A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control ci... | 08/28/2007 |
| 7201824 | Hybrid optical multi-axis beam steering apparatus An apparatus for precisely steering a beam of light by making use of a hybrid inter optical alignment that occurs when a beam steering mechanism is micro-machined with respect to a crystallographic orientation of a substrate. ... | 04/10/2007 |
| 7132621 | Plasma catalyst Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequ... | 11/07/2006 |
| 6936144 | High frequency plasma source A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network is arranged within the plasma sou... | 08/30/2005 |
| 6843893 | Metal dry etch using electronic field A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field pro... | 01/18/2005 |
| 6843927 | Method and apparatus for endpoint detection in electron beam assisted etching Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodi... | 01/18/2005 |
| 6375790 | Adaptive GCIB for smoothing surfaces A method and apparatus for adapting the nature of an ion beam during processing of the surface of a solid workpiece so as to improve the reduction of surface roughness (smoothing) by using a GCIB. In addition, the invention provides for surface smoothing ... | 04/23/2002 |
| 6273991 | Apparatus for plasma ion trimming of frequency devices A system for simultaneous frequency trimming of a plurality frequency devices such as oscillators, crystals and surface acoustic wave filters and resonators by removing intrinsic or previously deposited material through plasma ion bombardment is comprised... | 08/14/2001 |
| 6114811 | Electromagnetic high-frequency apparatus with a transmission wall having antennas An electromagnetic radio-frequency or microwave device having a treatment chamber (6) with a transmission wall (7, 7', 7"), which is permeable for the electromagnetic waves, to an adjacent chamber (4) and with a design of the transmission wall (7, 7', 7")... | 09/05/2000 |
| 6101972 | Plasma processing system and method A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion s... | 08/15/2000 |
| 5976328 | Pattern forming method using charged particle beam process and charged particle beam processing system A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the wo... | 11/02/1999 |
| 5885354 | Method and apparatus for processing a specimen The invention relates to a method and to apparatus for processing a specimen, particularly an integrated circuit, in which an area of the specimen to be processed is scanned with a corpuscular beam and at least one gas is supplied above the area to be pro... | 03/23/1999 |
| 5853521 | Multi-cathode electron beam plasma etcher A multi-cathode electron beam plasma etcher is disclosed. The multi-cathode electron beam plasma etcher is comprised of: a vacuum chamber; several cathodes which are installed in the upper end of the upper part of the chamber and generates an electron bea... | 12/29/1998 |
| 5851413 | Gas delivery systems for particle beam processing Apparatus and method of an improved gas delivery system for delivering reactant material to a workpiece, such as a substrate, being operated on by a particle beam employs a shroud-type concentrator having an interior axial passage. Fluid reactant material... | 12/22/1998 |
| 5639308 | Plasma apparatus A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma appar... | 06/17/1997 |
| 5565036 | Apparatus and method for igniting plasma in a process module The invention provides apparatus and methods for improving systems that expose samples to reactive plasmas, and more particularly for igniting plasma within a process module. The systems are of the type which have an electrode pair and a radiofrequency ge... | 10/15/1996 |
| 5563416 | Processing apparatus using fast atom beam A processing apparatus using a fast atom beam which has at least one source selected from among a light energy source, a laser beam source, a radical source, an electron beam source, an X-ray or radiation (alpha rays, beta rays, or gamma rays) source, and... | 10/08/1996 |
| 5413663 | Plasma processing apparatus A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam... | 05/09/1995 |
| 5368676 | Plasma processing apparatus comprising electron supply chamber and high frequency electric field generation means A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are placed on the electrodes. High frequency voltage is appli... | 11/29/1994 |
| 5342448 | Apparatus for processing a sample using a charged beam and reactive gases A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degr... | 08/30/1994 |
| 5328556 | Wafer fabrication Method and apparatus are set forth for providing a reactive radical species at a substrate surface. A wall structure defines an interior chamber. A substrate is mounted in the chamber at a target position therein with a surface region of the substrate ori... | 07/12/1994 |
| 4851097 | Apparatus for repairing a pattern film The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The ... | 07/25/1989 |
