Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 8157951 | Capacitively coupled plasma reactor having very agile wafer temperature control A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a wo... | 04/17/2012 |
| 8114244 | Method for etching a sample The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing ... | 02/14/2012 |
| 8092638 | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an ev... | 01/10/2012 |
| 8092639 | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressur... | 01/10/2012 |
| 8075729 | Method and apparatus for controlling temperature of a substrate A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking elect... | 12/13/2011 |
| 8012304 | Plasma reactor with a multiple zone thermal control feed forward control apparatus A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas un... | 09/06/2011 |
| 7964058 | Processing system and method for chemically treating a substrate A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical trea... | 06/21/2011 |
| 7674351 | Plasma processing apparatus A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generat... | 03/09/2010 |
| 7560007 | In-situ wafer temperature measurement and control Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow fo... | 07/14/2009 |
| 7531061 | Gas temperature control for a plasma process A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an i... | 05/12/2009 |
| 7416633 | Plasma processing apparatus Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surr... | 08/26/2008 |
| 7364798 | Internal member for plasma-treating vessel and method of producing the same It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by coverin... | 04/29/2008 |
| 7347006 | Processing apparatus and method for removing particles therefrom A processing apparatus includes a first detection unit for detecting a temperature of an inner wall of the vacuum vessel, a second detection unit for detecting a temperature of the processing unit, and a first control unit for controlling a temperature of the gas. T... | 03/25/2008 |
| 7347901 | Thermally zoned substrate holder assembly A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature... | 03/25/2008 |
| 7341673 | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electr... | 03/11/2008 |
| 7341502 | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular... | 03/11/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7311782 | Apparatus for active temperature control of susceptors A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature usin... | 12/25/2007 |
| 7309395 | System for forming composite polymer dielectric film A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing la... | 12/18/2007 |
| 7304264 | Micro thermal chamber having proximity control temperature management for devices under test A temperature unit to control a temperature of a device under test using a fluid includes a block disposed opposite the device under test and which defines a gap therebetween and through which the fluid passes across the device under test at a gap flow rate, and an ... | 12/04/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7276097 | Load-lock system, exposure processing system, and device manufacturing method A load-lock system includes a load-lock chamber arranged between a storage port which stores a substrate and a process chamber which processes the substrate in a process space maintained at a pressure lower than that in the storage port, and a dehumidifying unit whi... | 10/02/2007 |
| 7250361 | Method for forming a bonding pad of a semiconductor device including a plasma treatment Disclosed is a method for forming a bonding pad of a semiconductor device. The present invention provides a method for forming a bonding pad of a semiconductor device comprising the steps of: (a) forming a top metal line having a predetermined width on a structure o... | 07/31/2007 |
| 7250373 | Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is provided to a peripheral region of the substrate to passivate sidewalls of t... | 07/31/2007 |
| 7247888 | Film forming ring and method of manufacturing semiconductor device There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner... | 07/24/2007 |
| 7234862 | Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the su... | 06/26/2007 |
| 7235155 | Method and apparatus for monitoring plasma conditions using a monitoring ring A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providin... | 06/26/2007 |
| 7236229 | Load lock chamber, processing system A load lock chamber provided between a port that accommodates an object to be processed and is maintained at an ambient pressure, and a process chamber that is maintained at a reduced pressure or vacuum environment and performs a predetermined process for the object... | 06/26/2007 |
| 7229522 | Substrate processing apparatus and substrate processing method A substrate processing apparatus removes resist films formed on wafers by holding the wafers in a processing vessel and exposing the wafers to a mixed gaseous fluid of steam and an ozone-containing gas into the processing vessel. The inner surfaces, to be exposed to... | 06/12/2007 |
| 7220320 | Systems for producing semiconductors and members therefor The present invention provides members that are provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. Each member has a function of independently generating heat to heat the semiconductor, at least by radiation,... | 05/22/2007 |
| 7217670 | Dummy substrate for thermal reactor A single substrate reactor system for processing batches of product substrates one at a time is provided with at least one dummy substrate. In the time after one batch of product substrates is processed and before another batch of product substrates is ready for pro... | 05/15/2007 |
| 7218382 | Load-lock technique A load-lock system which includes a chamber housing and a capacity changing system for continuously changing the capacity of the chamber housing. ... | 05/15/2007 |
| 7208065 | Structure for measuring the etching speed The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor syste... | 04/24/2007 |
| 7208066 | Substrate processing apparatus and substrate processing method On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. ... | 04/24/2007 |
| 7208067 | Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer tempera... | 04/24/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7196535 | Thermal control system for environmental test chamber A method includes setting a first target temperature for an object that is in contact with a thermal medium, repeatedly receiving input that is indicative of a current temperature of the thermal medium, repeatedly estimating the temperature of the object based on th... | 03/27/2007 |
| 7196472 | Plasma display panel, its manufacturing method, and its protective layer material The present invention provides a plasma display panel that has a fast response in discharge generation to voltage application owing to a short discharge delay time, and at the same time suppresses the change in the discharge delay time to temperature. In the plasma ... | 03/27/2007 |
| 7195693 | Lateral temperature equalizing system for large area surfaces during processing In many processes used in fabricating semiconductors the wafer is seated on the top surface of a pedestal and heated in a high energy process step, such as plasma etching. The pedestal, chuck or platen may be cooling but the wafer gradually heats until the process c... | 03/27/2007 |
