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| Number | Title | Issue Date |
| 8187412 | Apparatus for providing device with gaps for capacitance reduction A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures wherein the mask has mask features for exposing parts of the dielectric ... | 05/29/2012 |
| 8172980 | Device with self aligned gaps for capacitance reduction A method for reducing capacitances between semiconductor device wirings is provided. A sacrificial layer is formed over a dielectric layer. A plurality of features are etched into the sacrificial layer and dielectric layer. The features are filled with a filler mate... | 05/08/2012 |
| 8075728 | Gas flow equalizer plate suitable for use in a substrate process chamber A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements i... | 12/13/2011 |
| 7789991 | Lag control A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based dielectric layer is performed, comprising providing a lag etchant gas, for... | 09/07/2010 |
| 7682479 | Fin structure formation A method for forming fin structures is provided. Sacrificial structures are provided on a substrate. Fin structures are formed on the sides of the sacrificial structures. The forming of the fin structures comprises a plurality of cycles, wherein each cycle comprises... | 03/23/2010 |
| 7540935 | Plasma oxidation and removal of oxidized material A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface... | 06/02/2009 |
| 7429306 | Plasma processing system A plasma processing system includes a plasma processing chamber and a plasma confining portion for defining a plasma confined area in the processing chamber. The plasma confining portion includes a plurality of spaced-apart segments arranged in a structural array. A... | 09/30/2008 |
| 7369920 | Pressure control system with optimized performance A pressure control system for controlling pressure of a fluid in a chamber includes a pressure sensor configured to measure the pressure of the fluid in the chamber, and a valve configured to control the pressure of the fluid in the chamber by regulating flow of the... | 05/06/2008 |
| 7357115 | Wafer clamping apparatus and method for operating the same A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafe... | 04/15/2008 |
| 7347900 | Chemical vapor deposition apparatus and method A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the... | 03/25/2008 |
| 7341644 | Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor There is not known a conventional method for predicting the consumed degree of consumable supplies and the thickness of deposited films without opening a processing chamber. A method for predicting the consumed degree of a consumable supply and the thickness ... | 03/11/2008 |
| 7338578 | Step edge insert ring for etch chamber An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped cross-sectional configuration which defines a perpendicular gap or flow space ... | 03/04/2008 |
| 7338887 | Plasma control method and plasma control apparatus A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the varia... | 03/04/2008 |
| 7337019 | Integration of fault detection with run-to-run control Semiconductor wafers are processed in conjunction with a manufacturing execution system using a run-to-run controller and a fault detection system. A recipe is received from the manufacturing execution system by the run-to-run controller for controlling a tool. The ... | 02/26/2008 |
| 7335277 | Vacuum processing apparatus A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow con... | 02/26/2008 |
| 7329616 | Substrate processing apparatus and substrate processing method A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A subs... | 02/12/2008 |
| 7329549 | Monitoring method of processing state and processing unit The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively set... | 02/12/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7314527 | Reactor system A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an outer wall extending along a first axis. A torch injector extends into th... | 01/01/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7311784 | Plasma processing device This invention relates to a plasma processing system. A common problem in the manufacture of semiconductors is the maintenance of a constant fluid flow throughout the chamber in which the semiconductors are being etched. The focus ring described herein helps control... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7291566 | Barrier layer for a processing element and a method of forming the same In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protect... | 11/06/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7282112 | Method and apparatus for an improved baffle plate in a plasma processing system The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baff... | 10/16/2007 |
| 7255772 | High pressure processing chamber for semiconductor substrate A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical... | 08/14/2007 |
| 7255774 | Process apparatus and method for improving plasma production of an inductively coupled plasma A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber pro... | 08/14/2007 |
| 7247888 | Film forming ring and method of manufacturing semiconductor device There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner... | 07/24/2007 |
| 7244335 | Substrate processing system and substrate processing method A substrate processing system is provided with an ozone generator capable of generating an ozone-containing gas by discharging electricity in an oxygen-containing gas, and a plurality of processing chambers each capable of holding substrates therein to process the s... | 07/17/2007 |
| 7235155 | Method and apparatus for monitoring plasma conditions using a monitoring ring A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providin... | 06/26/2007 |
| 7226868 | Method of etching high aspect ratio features A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor... | 06/05/2007 |
| 7225820 | High-pressure processing chamber for a semiconductor wafer A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a seal energizer. The seal energizer is configured to maintain the upper element against the lower element to maintain a proce... | 06/05/2007 |
| 7220943 | RF stand offs This invention relates to RV stand offs or breaks and in particular, but not exclusively not to stand offs which are suitable for use in plasma generating apparatus. A stand off 14 includes a resistive or insulating cylinder 15, through which gas feeds... | 05/22/2007 |
| 7217336 | Directed gas injection apparatus for semiconductor processing A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) ca... | 05/15/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7211524 | Method of forming insulating layer in semiconductor device The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N2O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causin... | 05/01/2007 |
| 7204912 | Method and apparatus for an improved bellows shield in a plasma processing system The present invention presents an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield coupled to a substrate holder electrode advantageously provides protection of a bellows with substantially minimal eros... | 04/17/2007 |
| 7203563 | Automatic N2 purge system for 300 mm full automation fab A system for manufacturing semiconductor integrated circuit (IC) devices, including an operating control system, a process intermediate station in communication with the operating control system, and a gas purge device, wherein the gas purge device is included in th... | 04/10/2007 |
| 7199327 | Method and system for arc suppression in a plasma processing system An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact w... | 04/03/2007 |
| 7199328 | Apparatus and method for plasma processing A plasma processing system including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the ga... | 04/03/2007 |
