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Class 156/345.25 - For endpoint detection


Subclass of Class 156 - Adhesive bonding and miscellaneous chemical manufacture
Definition: Apparatus wherein the means is for detecting when a desired
No. of patents: 191
Last issue date: 12/27/2011


1          
NumberTitleIssue Date
8083889Apparatus and method for plasma etching
A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which ...
12/27/2011
7833381Optical emission interferometry for PECVD using a gas injection hole
The present invention provides a method and apparatus for improving optical sensing of a plasma process through the use of a fiber optic sensor placed within a standard showerhead hole of a standard gas showerhead positioned in an upper electrode of a plasma system ...
11/16/2010
7582183Apparatus for detection of thin films during chemical/mechanical polishing planarization
A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotat...
09/01/2009
7377992Method and apparatus for detecting end point
A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is re...
05/27/2008
7353771Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that comprises a resonant inductor and a resonant capacitor between a switc...
04/08/2008
7354778Method for determining the end point for a cleaning etching process
A method is provided for determining the end point during cleaning etching of processing chambers by means of plasma etching, which is used for carrying out coating or etching processes during the manufacture of semiconductor components. The invention provides a met...
04/08/2008
7354524Method and system for processing multi-layer films
A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during th...
04/08/2008
7341644Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
There is not known a conventional method for predicting the consumed degree of consumable supplies and the thickness of deposited films without opening a processing chamber. A method for predicting the consumed degree of a consumable supply and the thickness ...
03/11/2008
7329328Method for etch processing with end point detection thereof
A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit. ...
02/12/2008
7316761Apparatus for uniformly etching a dielectric layer
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solen...
01/08/2008
7314401Methods and systems for conditioning planarizing pads used in planarizing substrates
Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may moni...
01/01/2008
7312865Method for in situ monitoring of chamber peeling
A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the ...
12/25/2007
7306696Interferometric endpoint determination in a substrate etching process
In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching pro...
12/11/2007
7303648Via etch process
Systems and techniques relating to etching vias in integrated circuit devices, in one implementation, include: providing a dielectric material and a conductive material, removing a first portion of the dielectric material to form a hole in the dielectric material, p...
12/04/2007
7297287Method and apparatus for endpoint detection using partial least squares
An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded...
11/20/2007
7295584System and method for generating multi-wavelength laser source using highly nonlinear fiber
A number of embodiments provide multi-Wavelength Laser Source (MWLS) designs based on Super Continuum (SC) generation using Highly Non-Linear optical Fiber (HNLF). Advantageously, in some embodiments this technology only needs a single wavelength locking mechanism t...
11/13/2007
7291360Chemical vapor deposition plasma process using plural ion shower grids
A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu...
11/06/2007
7257457System and method for monitoring semiconductor production apparatus
A plurality of pieces of process data are acquired from a semiconductor production apparatus while it is in operation, and then, a multivariate analysis model is created using at least a portion of the plurality of pieces of process data. ...
08/14/2007
7244474Chemical vapor deposition plasma process using an ion shower grid
A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r...
07/17/2007
7241397Honeycomb optical window deposition shield and method for a plasma processing system
An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspec...
07/10/2007
7235474System and method for imprint lithography to facilitate dual damascene integration with two imprint acts
A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the...
06/26/2007
7235155Method and apparatus for monitoring plasma conditions using a monitoring ring
A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providin...
06/26/2007
7202946Method and device utilizing plasma source for real-time gas sampling
Aspects of the present invention provide novel methods and devices for sampling gas, exciting the sampled gas to emit radiation and detecting in real time from the emitted radiation a plurality of wave bands of an emission spectrum. Energy used to excite the sampled...
04/10/2007
7201174Processing apparatus and cleaning method
In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point...
04/10/2007
7192505Wafer probe for measuring plasma and surface characteristics in plasma processing environments
There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integ...
03/20/2007
7182819Methods for cleaning a chamber of semiconductor device manufacturing equipment
Methods for cleaning a chamber of semiconductor device manufacturing equipment are disclosed. An illustrated method comprises supplying cleaning gas into a chamber to start a cleaning process; detecting the intensity of a wavelength for the cleaning gas; fixing a va...
02/27/2007
7178393Measuring apparatus and method for thin board
A measuring apparatus including a fixed stator, a rotor to rotate in the state of being disposed outside the center of rotation of the stator, a retaining mechanism for retaining a thin board on the rotor, and a measuring section to measure physical properties of th...
02/20/2007
7172675Observation window of plasma processing apparatus and plasma processing apparatus using the same
An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processi...
02/06/2007
7169254Plasma processing system and apparatus and a sample processing method
A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the s...
01/30/2007
7170184Treatment of a ground semiconductor die to improve adhesive bonding to a substrate
Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor...
01/30/2007
7166200Method and apparatus for an improved upper electrode plate in a plasma processing system
The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion...
01/23/2007
7163585Method and apparatus for an improved optical window deposition shield in a plasma processing system
The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously pro...
01/16/2007
7158845Man-machine interface for monitoring and controlling a process
A process monitoring system (100) for monitoring a plasma processing system. The process monitoring system (100) includes a plurality of processing subsystems (120), and a control system (110) coupled to the processing subsystems (120
01/02/2007
7147747Plasma processing apparatus and plasma processing method
A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The...
12/12/2006
7147748Plasma processing method
A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that a...
12/12/2006
7144484Ion mill shutter system
A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed...
12/05/2006
7130767Computer-implemented data presentation techniques for a plasma processing system
A computer-implemented data presentation technique for presenting a set of expected failure states of system-related constructs pertaining to a plasma processing system is disclosed. The technique includes receiving a set of indicia pertaining to a first system-rela...
10/31/2006
7122096Method and apparatus for processing semiconductor
In a semiconductor processing apparatus including a process chamber, a sample stand for holding a sample in the process chamber, and a process gas supply unit for supplying a process gas to the process chamber, a plurality of samples of a lot are successively suppli...
10/17/2006
7118926Method of optimizing seasoning recipe for etch process
A method for optimizing a seasoning recipe for a dry etch process. The method includes setting a critical value of reproducibility, a main etch recipe, and a preliminary seasoning recipe. A test wafer is then etched using the preliminary seasoning recipe in a dry et...
10/10/2006
7108751Method and apparatus for determining consumable lifetime
A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas inje...
09/19/2006
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