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| Number | Title | Issue Date |
| 7972467 | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width ... | 07/05/2011 |
| 7887669 | Vacuum processing apparatus The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum process... | 02/15/2011 |
| 7879179 | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 | 02/01/2011 |
| 7846291 | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 | 12/07/2010 |
| 7824519 | Variable volume plasma processing chamber and associated methods A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the ... | 11/02/2010 |
| 7632375 | Electrically enhancing the confinement of plasma A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from ... | 12/15/2009 |
| 7632376 | Method and apparatus for atomic layer deposition (ALD) in a proximity system An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to... | 12/15/2009 |
| 7618514 | Photo-etched EDM electrode An electrical discharge machining electrode includes a body and one or more shaped teeth. The one or more shaped teeth of the body have a diffuser section and a metering section in electrical communication therewith. The body and the teeth may be formed by a process... | 11/17/2009 |
| 7556711 | Semiconductor device manufacturing apparatus and operating method thereof A semiconductor device manufacturing apparatus is disclosed. The semiconductor device manufacturing apparatus applies a process to a semiconductor wafer by supplying a vapor of a corrosive liquid source to a processing container. An electrode is immersed in a storin... | 07/07/2009 |
| 7531059 | Cleaning of semiconductor wafers by contaminate encapsulation An apparatus and method are provided for removing contaminate particulate matter from substrate surfaces such as semiconductor wafers. The method and apparatus use a material, preferably a liquid curable polymer, which is applied as a sacrificial coating to the surf... | 05/12/2009 |
| 7524395 | Plasma chamber having plasma source coil and method for etching the wafer using the same A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source... | 04/28/2009 |
| 7479204 | Method of manufacturing semiconductor substrate and method of evaluating quality of semiconductor substrate A method of evaluating the presence or absence and/or degree of metal contamination of a semiconductor substrate including etching the surface of the semiconductor substrate by SC-1 cleaning and/or a HF cleaning, detecting bright points on the surface of the etched ... | 01/20/2009 |
| 7416632 | Substrate processing apparatus and substrate processing method A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A subs... | 08/26/2008 |
| 7377991 | Ultrasonic assisted etch using corrosive liquids An ultrasonic etching apparatus for chemically-etching a workpiece is disclosed. The apparatus includes an outer tank at least partially filled with an aqueous solution, an inner tank at least partially disposed within the outer tank and in contact with aqueous solu... | 05/27/2008 |
| 7367281 | Plasma antenna The plasma antenna is designed to allow connection between electric elements within the antenna to be varied without changing the construction of the antenna during a chemical vapor deposition process, thereby maximizing efficiency of a cleaning or deposition proces... | 05/06/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7347915 | Plasma in-situ treatment of chemically amplified resist A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening pl... | 03/25/2008 |
| 7348064 | Low temperature polyimide adhesive compositions and methods relating thereto The present invention relates to a polyimide adhesive composition having a polyimide derived from an aromatic dianhydride and a diamine component, where the diamine component is preferably about 50 to 90 mole % of an aliphatic diamine and about 10 to 50 mole % of an... | 03/25/2008 |
| 7338715 | Low temperature cure polyimide compositions resistant to arc tracking and methods relating thereto The polyimides of the present invention are derived from aliphatic diamines and show advantageous arc tracking performance (i.e., low arc tracking). These polyimides can be cured at low temperatures making them suitable as coverlay compositions in electronic circuit... | 03/04/2008 |
| 7338699 | Island projection-modified part, method for producing the same, and apparatus comprising the same In film-forming devices and plasma-processing devices, filmy matter adheres to the surfaces of the inner parts and it peels to cause dust and particles in the devices. In the devices, the dust and particles contaminate the objects for film formation thereon or the o... | 03/04/2008 |
| 7332425 | Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects The present invention provides a method of forming a interconnect barrier layer 100. In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 located in a dielectric layer 135 of a substrate 1... | 02/19/2008 |
| 7297286 | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radical... | 11/20/2007 |
| 7293526 | Plasma reaction chamber liner consisting essentially of osmium The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 11/13/2007 |
| 7288155 | Method for the rapid thermal control of a work piece in liquid or supercritical fluid A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chambe... | 10/30/2007 |
| 7287831 | Printhead integrated circuit adapted for adhesive bonding A printhead integrated circuit suitable for bonding to a mounting surface of an ink manifold using an adhesive is provided. The printhead integrated circuit comprises: a plurality of nozzles formed on a front side of the printhead integrated circuit; a plurality of ... | 10/30/2007 |
| 7270744 | Automated low-volume tangential flow filtration process development device An automated process development device providing flexibility and accuracy for the investigative development of tangential flow filtration (tff) processes and used for evaluating the process parameters of a laboratory scale tff process with an eye towards developing... | 09/18/2007 |
| 7267742 | Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a conc... | 09/11/2007 |
| 7267741 | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon... | 09/11/2007 |
| 7261008 | Air sampler An air sampler having a fan; an air inlet tube; a main body having a cyclonic cup, a stripping column and a demister; and fluidic circuitry for inputting fluids to the main body and the air inlet tube, and for outputting fluids from the main body. Air flow through t... | 08/28/2007 |
| 7256938 | Method for making large scale multilayer dielectric diffraction gratings on thick substrates using reactive ion etching Methods of fabricating large size, high performance multilayer diffraction gratings having a thick substrate that take advantage of reactive ion etching during the fabrication process are provided herein. In one implementation, a method of making a multilayer diffra... | 08/14/2007 |
| 7255772 | High pressure processing chamber for semiconductor substrate A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical... | 08/14/2007 |
| 7255898 | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material ... | 08/14/2007 |
| 7252737 | Pedestal with integral shield Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a low... | 08/07/2007 |
| 7252738 | Apparatus for reducing polymer deposition on a substrate and substrate support An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.... | 08/07/2007 |
| 7252575 | Polishing state monitoring apparatus and polishing apparatus and method A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a lig... | 08/07/2007 |
| 7250375 | Substrate processing method and material for electronic device A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of s... | 07/31/2007 |
| 7247207 | Vacuum processing apparatus A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall struct... | 07/24/2007 |
| 7244625 | Plasma processing method and plasma processing device When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposi... | 07/17/2007 |
| 7244475 | Plasma treatment apparatus and control method thereof A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input... | 07/17/2007 |
| 7241345 | Cylinder for thermal processing chamber The cylinder includes a core and a coating covering most of the core. The core is made from a heat-resistant or insulating material. The core has inner and outer side walls and opposing first and second ends. The outer side wall is further away from a central longit... | 07/10/2007 |
