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| Number | Title | Issue Date |
| 8128756 | Technique for the growth of planar semi-polar gallium nitride A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grow... | 03/06/2012 |
| 7704331 | Technique for the growth of planar semi-polar gallium nitride A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grow... | 04/27/2010 |
| 7662239 | Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishin... | 02/16/2010 |
| 7368067 | P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end o... | 05/06/2008 |
| 7356423 | Apparatus and method for reading out a differential capacity with a first and second partial capacity An apparatus for reading out a differential capacity with a first and second partial capacity includes a first oscillator having a first frequency-determining element connectable to the first partial capacity and a second oscillator having a second frequency-determi... | 04/08/2008 |
| 7344604 | LED and a lighting apparatus using the LED Disclosed herein is a LED and a lighting apparatus, which employs a LED as a light source of low power and high efficiency for an optical projection system. The lighting apparatus comprises a reflection part together with the LED, and enhances light emitting directi... | 03/18/2008 |
| 7332410 | Method of epitaxial-like wafer bonding at low temperature and bonded structure A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-cont... | 02/19/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7317506 | Variable illumination source An apparatus and method for providing a variable illumination field for use in lithographic imaging for semiconductor manufacturing includes providing a an illumination system including a variable optical element having an array of addressable elements, each address... | 01/08/2008 |
| 7282430 | Melt-based patterning for electronic devices The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the in... | 10/16/2007 |
| 7268646 | Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso... | 09/11/2007 |
| 7253071 | Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide Methods for reducing stress in silicon to enhance the formation of nickel mono-silicide films formed thereon include a strain compensation source/drain implant process, a silicide formation process on an amorphous silicon layer, a strain compensating buried layer pr... | 08/07/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7235131 | Method for forming a single crystalline film A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molec... | 06/26/2007 |
| 7232737 | Treatment of a removed layer of silicon-germanium A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si1-xGex and a second layer of Si1-yGey. The method includes implanting atomic species into ... | 06/19/2007 |
| 7220324 | Technique for the growth of planar semi-polar gallium nitride A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grow... | 05/22/2007 |
| 7211821 | Devices with optical gain in silicon A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rar... | 05/01/2007 |
| 7204050 | Exit device with lighted touchpad An exit device includes an electroluminescent exit sign assembly, preferably mounted on a push rail actuator of the exit device. An electroluminescent illuminator, an opaque material and a transparent protective cover form the electroluminescent sign assembly. The p... | 04/17/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7192791 | Semiconductor wafer having an edge based identification feature A semiconductor wafer comprises a wafer formed of a semiconductor material having a peripheral edge portion and a repeating mark on the edge portion of the wafer to allow identification of the wafer. Also described is a method of identifying and tracking these semic... | 03/20/2007 |
| 7190037 | Integrated transistor devices A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulat... | 03/13/2007 |
| 7186302 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet ... | 03/06/2007 |
| 7172789 | Methods and apparatus for fluidic self assembly Methods and apparatuses for assembling a structure onto a substrate. A method according to one aspect of the invention includes dispensing a slurry onto a substrate wherein the slurry includes a first plurality of elements, each of which is designed to mate with a r... | 02/06/2007 |
| 7118686 | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a polishing pad with a slurry solution in which copper and a material, such as tungsten, o... | 10/10/2006 |
| 7118934 | Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on the underlying layer, a porous III-nitride semiconductor layer and a po... | 10/10/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7101444 | Defect-free semiconductor templates for epitaxial growth A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation ... | 09/05/2006 |
| 7083679 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 08/01/2006 |
| 7071080 | Process for producing silicon on insulator structure having intrinsic gettering by ion implantation The present invention is directed to a process for producing a silicon on insulator (SOI) structure having intrinsic gettering, wherein a silicon substrate is subjected to an ideal precipitating wafer heat treatment which enables the substrate, during the heat treat... | 07/04/2006 |
| 7068125 | Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso... | 06/27/2006 |
| 7060624 | Deep filled vias Flared and non-flared metallized deep vias having aspect ratios of about 2 or greater are provided. Blind vias have been fabricated in silicon substrates up to a depth of about 300 microns, and flared through vias have been fabricated up to about 750 microns, the ap... | 06/13/2006 |
| 7046719 | Soft handoff between cellular systems employing different encoding rates A receiver (200) is provided receiving signals from differing base stations (BTSA and BTSB). The signal from BTSA is encoded using a first rate convolutional encoder while the signal transmitted from BTSB is encoded... | 05/16/2006 |
| 7043300 | High-energy electrolytic capacitors for implantable defibrillators Implantable defibrillators are implanted into the chests of patients prone to suffering ventricular fibrillation, a potentially fatal heart condition. A critical component in these devices is an aluminum electrolytic capacitors, which stores and delivers one or more... | 05/09/2006 |
| 7037770 | Method of manufacturing strained dislocation-free channels for CMOS A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. An SiGe layer is grown in the channel of the nFET channel and a Si:C layer is grown in the pFET channel. The SiGe and Si:C l... | 05/02/2006 |
| 7018910 | Transfer of a thin layer from a wafer comprising a buffer layer A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor... | 03/28/2006 |
| 7011717 | Method for heat treatment of silicon wafers and silicon wafer According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperatu... | 03/14/2006 |
| 6997776 | Process for producing a semiconductor wafer The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polish... | 02/14/2006 |
| 6955745 | Method of spark-processing silicon and resulting materials The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can e... | 10/18/2005 |
| 6953703 | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 10/11/2005 |
| 6940103 | Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 09/06/2005 |
