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Felix Hoffmann, a German chemist, was searching for something to relieve his father's arthritis. In doing so, he "rediscovered" acetylsalicylic acid and in 1900, patented a stable process for developing it. Hence, we have aspirin.
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| Number | Title | Issue Date |
| 5714014 | Semiconductor heterojunction material A semiconductor heterojunction material includes a heterojunction configured by successively overlaying first, middle and third layers of semiconductor, some or all of the constituent elements of the first and third layers being different and the middle l... | 02/03/1998 |
| 5647917 | Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .TH... | 07/15/1997 |
| 5458085 | Magnesium-doping in III-V compound semiconductor A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compoun... | 10/17/1995 |
| 5441913 | Process of making a semiconductor epitaxial substrate A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an Iny Ga.sub.(1-y) As (0 | 08/15/1995 |
| 5364468 | Method for the growth of epitaxial metal-insulator-metal-semiconductor structures In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1×10-7 mbar, maintaining... | 11/15/1994 |
| 5314547 | Rare earth slab doping of group III-V compounds A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particular... | 05/24/1994 |
| 5254507 | Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. Crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all nativ... | 10/19/1993 |
| 5173127 | Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all n... | 12/22/1992 |
| 5089082 | Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the... | 02/18/1992 |
| 4944811 | Material for light emitting element and method for crystal growth thereof A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped I... | 07/31/1990 |
| 4900373 | Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure In a process for preparing an infrared sentitive photodiode comprising the teps of: (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbSe, PbTe, PbSex Te1-x, P... | 02/13/1990 |
| 4857270 | Process for manufacturing silicon-germanium alloys A process for manufacturing a silicon-germanium alloy comprising introducing SiH4 gas, GeCl4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750° C., and depositing ... | 08/15/1989 |
| 4843031 | Method of fabricating compound semiconductor laser using selective irradiation Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junct... | 06/27/1989 |
| 4793872 | III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate.... | 12/27/1988 |
| 4789421 | Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP a... | 12/06/1988 |
| 4549912 | Anode and cathode connections for the practice of electromigration In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful ... | 10/29/1985 |
| 4502207 | Wiring material for semiconductor device and method for forming wiring pattern therewith A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprise... | 03/05/1985 |
| 4492810 | Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap... | 01/08/1985 |
