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| Number | Title | Issue Date |
| 7355212 | Light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 04/08/2008 |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... | 03/25/2008 |
| 7344604 | LED and a lighting apparatus using the LED Disclosed herein is a LED and a lighting apparatus, which employs a LED as a light source of low power and high efficiency for an optical projection system. The lighting apparatus comprises a reflection part together with the LED, and enhances light emitting directi... | 03/18/2008 |
| 7338902 | Epitaxial growth method and substrate for epitaxial growth An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs ... | 03/04/2008 |
| 7332365 | Method for fabricating group-III nitride devices and devices fabricated using method A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epita... | 02/19/2008 |
| 7327069 | Surface acoustic wave device and method for making same and mobile phone having same A surface acoustic wave (SAW) device includes a silicon substrate, a piezoelectric layer on the substrate and two generally comb-shaped electrodes. The thickness of the piezoelectric layer is preferably configured to be in the range from about 0.05 μm to about 2 μ... | 02/05/2008 |
| 7288791 | Epitaxial wafer and method for manufacturing method It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film ... | 10/30/2007 |
| 7285495 | Methods for thermally treating a semiconductor layer A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer l... | 10/23/2007 |
| 7285378 | Juxtaposed island manufacturing method by means of self-organised deposition on a substrate and structure obtained using said method The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimens... | 10/23/2007 |
| 7282449 | Thermal treatment of a semiconductor layer A method for thermally treating a silicon germanium semiconductor layer from a donor wafer is described. An embodiment of the technique includes co-implanting atomic species into a first surface of the donor wafer to form a zone of weakness at a predetermined depth ... | 10/16/2007 |
| 7276428 | Methods for forming a semiconductor structure Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species ... | 10/02/2007 |
| 7276704 | Photomultiplier tube, photomultiplier tube unit, and radiation detector A photomultiplier tube, a photomultiplier tube unit, and a performance-improved radiation detector for increasing a fixing area of a side tube in a faceplate while increasing an effective sensitive area of the faceplate. In the photomultiplier tube, a side face (... | 10/02/2007 |
| 7247513 | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer for... | 07/24/2007 |
| 7240410 | Method for manufacturing a piezoelectric resonator A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonat... | 07/10/2007 |
| 7238589 | In-place bonding of microstructures A method for bonding microstructures to a semiconductor substrate using attractive forces, such as, hydrophobic, van der Waals, and covalent bonding is provided. The microstructures maintain their absolute position with respect to each other and translate vertically... | 07/03/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7233094 | Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W la... | 06/19/2007 |
| 7220995 | Substrate for electronic device, electronic device and methods of manufacturing same A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device c... | 05/22/2007 |
| 7221002 | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 05/22/2007 |
| 7205662 | Dielectric barrier layer films In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, w... | 04/17/2007 |
| 7154163 | Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitr... | 12/26/2006 |
| 7148461 | Photomultiplier tube with enchanced hermiticity A metal side tube (2), a glass faceplate (3), and a stem plate (4) constitute a hermetically sealed vessel (5) for a photomultiplier tube. An edge portion (20) is provided at on open end (A) of the side tube (2). The edge po... | 12/12/2006 |
| 7137803 | Fluid pressure imprint lithography An improved method of imprint lithography involves using direct fluid pressure to press the mold into a substrate-supported film. Advantageously the mold and/or substrate are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing... | 11/21/2006 |
| 7138664 | Semiconductor device having a light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 11/21/2006 |
| 7135714 | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 11/14/2006 |
| 7094668 | Annealing process and device of semiconductor wafer A device and method for annealing a wafer. The preferred embodiment includes applying a basic thermal budget to a weakened zone of a wafer, substantially evenly over the weakened zone. The basic thermal budget is insufficient to detach a detachment layer from a rema... | 08/22/2006 |
| 7063751 | Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the w... | 06/20/2006 |
| 7045439 | Methods of forming semiconductor constructions The invention includes a method of forming a semiconductor construction. A first substrate is provided which comprises silicon-containing structures separated from one another by an insulative material. The silicon-containing structures define an upper surface. A se... | 05/16/2006 |
| 7046719 | Soft handoff between cellular systems employing different encoding rates A receiver (200) is provided receiving signals from differing base stations (BTSA and BTSB). The signal from BTSA is encoded using a first rate convolutional encoder while the signal transmitted from BTSB is encoded... | 05/16/2006 |
| 7041178 | Method for low temperature bonding and bonded structure A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperat... | 05/09/2006 |
| 7039278 | Single-fiber bi-directional transceiver An integrated transceiver for achieving bi-directional communication along a single fiber-optic cable in a fiber-optic network. The transceiver includes an active part for transmit and receive portions of the transceiver. The active part includes a photo diode and a... | 05/02/2006 |
| 7035489 | Thin film electro-optical deflector device and a method of fabrication of such a device An electro-optical deflector device, having a thin ferroelectric oxide film and a method of fabricating the deflector device is described. One embodiment of a thin film electro-optic deflector device includes: a planar optical waveguide, having a thin ferroelectric ... | 04/25/2006 |
| 7011706 | Device substrate and method for producing device substrate A device substrate is provided having: a Si(111) substrate; a buffer layer formed by epitaxial growth on the Si(111) substrate 11, and containing at least one of a rare earth metal oxide and an alkali earth metal oxide; and a semiconductor material layer form... | 03/14/2006 |
| 7005198 | Phosphor thin film, preparation method, and EL panel A phosphor thin film is provided that has a high luminance, a satisfactory color purity sufficient to eliminate a need for filters, and a long luminance life. The phosphor thin film can be adapted to suit each element of red, green and blue in full color EL panels. ... | 02/28/2006 |
| 7005947 | Surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic instrument A surface acoustic wave element includes a single crystal substrate; a buffer layer formed by a crystal film that is formed on top of the single crystal substrate; and a piezoelectric thin film having a hexagonal system or a trigonal system crystal structure that is... | 02/28/2006 |
| 6964914 | Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined b... | 11/15/2005 |
| 6955933 | Light emitting diodes with graded composition active regions A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region include... | 10/18/2005 |
| 6946311 | Processing apparatus and wafer processing method There are provide a wafer processing method comprising the steps of securing the entirety of a wafer which is provided, on its right side, with a surface protection tape adhered thereto, to a frame by a dicing tape adhered to the underside of the wafer; irradiating ... | 09/20/2005 |
| 6946360 | Fluid pressure bonding An improved method of bonding involves using direct fluid pressure to press together the layers to be bonded. Advantageously one or more of the layers are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished... | 09/20/2005 |
| 6946641 | Photomultiplier tube A metal side tube (2), a glass faceplate (3), and a stem plate ( ) constitute a hermetically sealed vessel (5) for a photomultiplier tube. An edge portion (20) is provided at on open end (A) of the side tube (2). The edge portion (... | 09/20/2005 |
