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| Number | Title | Issue Date |
| 8397667 | Process and apparatus for the plasma coating of workpieces with spectral evaluation of the process parameters The invention provides a process for coating workpieces by plasma-induced chemical vapor deposition, in which a process gas is introduced into a coating chamber and a plasma is ignited by electromagnetic energy in at least one region of the coating chamber which adj... | 03/19/2013 |
| 8387561 | Method and apparatus for cathodic arc ion plasma deposition A method and apparatus for depositing a coating material on a surface of a substrate by an ion plasma deposition process using a hollow cathode is disclosed. The cathode may be a substantially cylindrical hollow cathode. A plasma arc is formed on the outer circumfer... | 03/05/2013 |
| 8387563 | Combinatorial process system A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process ... | 03/05/2013 |
| 8375892 | Methods and apparatus for incorporating nitrogen in oxide films In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the... | 02/19/2013 |
| 8360003 | Plasma reactor with uniform process rate distribution by improved RF ground return path In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly nea... | 01/29/2013 |
| 8336488 | Multi-station plasma reactor with multiple plasma regions A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided... | 12/25/2012 |
| 8316796 | Film coating system and isolating device thereof A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, ... | 11/27/2012 |
| 8312840 | Substrate processing apparatus and method Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the i... | 11/20/2012 |
| 8297224 | Substrate processing apparatus An ALD apparatus includes: a process chamber that accommodates a boat charged with a plurality of wafers; gas supply systems that supplies process gases to the wafers; a pair of electrodes arranged in a stacked direction of the wafers; a high-frequency power source ... | 10/30/2012 |
| 8286581 | High frequency power source and its control method, and plasma processing apparatus In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The hig... | 10/16/2012 |
| 8281741 | Plasma deposition apparatus and deposition method utilizing same A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film d... | 10/09/2012 |
| 8281739 | RF shutter The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition... | 10/09/2012 |
| 8272348 | Method for plasma deposition and plasma CVD system In a film-forming process with a capacitively-coupled plasma (CCP) chemical vapor deposition (CVD) device, pulse control is performed on a low-frequency radio-frequency power source. During the pulse control, an ON time and an OFF time form one period. Furthermore, ... | 09/25/2012 |
| 8240271 | Substrate processing apparatus To provide a substrate processing apparatus capable of easily installing a plasma discharge electrode having flexibility at a prescribed position in an electrode protective tube, and is capable of holing the plasma discharge electrode having flexibility at the presc... | 08/14/2012 |
| 8235002 | Plasma assisted apparatus for organic film deposition A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. I... | 08/07/2012 |
| 8191504 | Coating apparatus and methods A coating end effector may be carried by a robot. A plasma spray head is mounted by a joint to the end effector. A plurality of actuators couple the end effector and plasma spray head to provide articulation of the joint. The apparatus may be used to coat an airfoil... | 06/05/2012 |
| 8141514 | Plasma processing apparatus, plasma processing method, and storage medium A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an e... | 03/27/2012 |
| 8136480 | Physical vapor deposition system A physical vapor deposition system for making microparticles generated by using a non-transfer type plasma torch not generating an outgas even in an ultra-high vacuum environment accelerate by a supersonic gas flow and depositing microparticles on a substrate to for... | 03/20/2012 |
| 8117986 | Apparatus for an improved deposition shield in a plasma processing system The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with su... | 02/21/2012 |
| 8104428 | Plasma processing apparatus A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that... | 01/31/2012 |
| 8100081 | Edge removal of films using externally generated plasma species The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intr... | 01/24/2012 |
| 8074599 | Plasma uniformity control by gas diffuser curvature Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream... | 12/13/2011 |
| 8011320 | Rotary pressure distributor and carousel-type hollow body treatment machine equipped therewith Rotary pressure distributor for a carousel-type hollow-body treatment machine, comprising several treatment stations, this distributor comprising two coaxial rings (2, 3) in sealed contact, one of them (3) a rotary ring comprising communication orifice... | 09/06/2011 |
| 8001927 | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas stream The invention relates to a plasma spraying device (1) for spraying a coating (2) onto a substrate (3) by a thermal spray process. Said plasma spraying device (1) includes a plasma torch (4) for heating up a plasma gas (5) in... | 08/23/2011 |
| 7987814 | Lower liner with integrated flow equalizer and improved conductance A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is config... | 08/02/2011 |
| 7942111 | Method and device for vacuum-coating a substrate A method is proposed for vacuum-coating a substrate using a plasma-CVD method. In order to control ion bombardment during the vacuum coating, a substrate voltage, produced independently from a coating plasma, is applied to the substrate. The substrate voltage is mod... | 05/17/2011 |
| 7913645 | Methods and apparatus for incorporating nitrogen in oxide films In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the... | 03/29/2011 |
| 7913646 | Vacuum processing apparatus and vacuum processing method The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed. The vacuum processing apparatus comprises a processing chamber 104 di... | 03/29/2011 |
| 7882800 | Ring mechanism, and plasma processing device using the ring mechanism A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to ... | 02/08/2011 |
| 7832354 | Cathode liner with wafer edge gas injection in a plasma reactor chamber The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge. ... | 11/16/2010 |
| 7810448 | Apparatus and method for the treating of workpieces The invention relates to an apparatus and a method for the coating of hollow bodies, in particular for the internal coating of plastic drinks bottles by means of a PICVD. It is an object of the invention to ensure a flexible process sequence, a high throughput, an i... | 10/12/2010 |
| 7793612 | Ring plasma jet method and apparatus for making an optical fiber preform A method and apparatus for making an optical fiber preform, including injecting a plasma gas source into the first end of a tubular member; generating a ring plasma flame with the plasma gas source flowing through a plasma gas feeder nozzle, the plasma gas feeder no... | 09/14/2010 |
| 7665416 | Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitati... | 02/23/2010 |
| 7578258 | Methods and apparatus for selective pre-coating of a plasma processing chamber An apparatus for selectively pre-coating a plasma processing chamber, including a chamber wall is disclosed. The apparatus includes a first set of RF electrodes, the first set of RF electrodes configured to strike a first pre-coat plasma, the first set of RF electro... | 08/25/2009 |
| 7571698 | Low-frequency bias power in HDP-CVD processes A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control s... | 08/11/2009 |
| 7484473 | Suspended gas distribution manifold for plasma chamber A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and cont... | 02/03/2009 |
| 7458335 | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils A magnetic field-enhanced plasma reactor is disclosed, comprising a reaction chamber for applying a plasma to a substrate, a plurality of primary electromagnets disposed about said reaction chamber, and a plurality of secondary electromagnets. At least two of the pr... | 12/02/2008 |
| 7438018 | Confinement ring assembly of plasma processing apparatus A confinement ring assembly of a plasma treatment apparatus includes a cam ring disposed above the process chamber, a plurality of plungers disposed about a process chamber of the apparatus and operated by the cam ring, and a plurality of confinement rings coupled t... | 10/21/2008 |
| 7439678 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/21/2008 |
| 7438765 | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position conf... | 10/21/2008 |
