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| Number | Title | Issue Date |
| 7442946 | Nonuniform ion implantation apparatus and method using a wide beam A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit... | 10/28/2008 |
| 7434537 | Device for the coating of objects An apparatus for coating objects having a single microwave source, two or more coating chambers, and an impedance structure or a waveguide structure. The coating chambers are connected to the single microwave source. The impedance structure or waveguide structure di... | 10/14/2008 |
| 7430985 | Plasma processing equipment Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for plac... | 10/07/2008 |
| 7419567 | Plasma processing apparatus and method A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a periphera... | 09/02/2008 |
| 7338575 | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected ... | 03/04/2008 |
| 7338576 | Plasma processing device Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are... | 03/04/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7305935 | Slotted antenna waveguide plasma source A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster appli... | 12/11/2007 |
| 7304435 | Device for confinement of a plasma within a volume A device of a plasma (5) for confinement of a plasma within a housing (1), comprising creation means for creating a magnetic field, said means being a series of permanent magnets (3) for creation of a magnetic field presenting an alternating mul... | 12/04/2007 |
| 7296533 | Radial antenna and plasma device using it A plasma device includes a first conductive plate (31) in which a plurality of slots (36) are formed, a second conductive plate (32) having a microwave inlet (35) and disposed opposite to the first conductive plate (31), a ring mem... | 11/20/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7081710 | Elementary plasma source and plasma generation apparatus using the same An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second mag... | 07/25/2006 |
| 7067034 | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and... | 06/27/2006 |
| 7060931 | Neutral beam source having electromagnet used for etching semiconductor device Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around ... | 06/13/2006 |
| 7059268 | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on th... | 06/13/2006 |
| 7034285 | Beam source and beam processing apparatus A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10 | 04/25/2006 |
| 6965115 | Airtight processing apparatus, airtight processing method, and electron beam processing apparatus An airtight processing apparatus comprises a chamber having a side wall and a bottom wall airtightly fixed to the side wall, and a bed supported inside the chamber by the side wall with a gap from the bottom wall. ... | 11/15/2005 |
| 6916400 | Device for the plasma treatment of gases Provided is a device for the microwave-sustained plasma treatment of gases, which comprises a hollow structure forming a waveguide intended to be connected to a microwave generator, and means for making the gas to be treated flow through the said structure in a regi... | 07/12/2005 |
| 6902683 | Plasma processing apparatus and plasma processing method A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment... | 06/07/2005 |
| 6858120 | Method and apparatus for the fabrication of ferroelectric films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li)... | 02/22/2005 |
| 6805770 | Technique for improving uniformity of magnetic fields that rotate or oscillate about an axis Techniques used in systems that employ pairs of coils arranged around an axis to make a magnetic field that rotates around an axis to reduce or eliminate the effects of corners where adjacent ones of the coils meet on the uniformity of the magnetic field. The techni... | 10/19/2004 |
| 6787200 | Method and device for electronic cyclotronic resonance plasma deposit of carbon nanofibre layers in fabric form and resulting fabric layers Process and device for depositing, by electron cyclotron resonance plasma, a web of carbon nanofibres or nanotubes, on a substrate without a catalyst, by injection of a microwave power into a deposition chamber including a magnetic structure with a highly unbalanced... | 09/07/2004 |
| 6771026 | Plasma generation by mode-conversion of RF-electromagnetic wave to electron cyclotron wave A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window a... | 08/03/2004 |
| 6764575 | Magnetron plasma processing apparatus When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A... | 07/20/2004 |
| 6733617 | Direct detection of dielectric etch system magnet driver and coil malfunctions The direct detection of dielectric etch system magnet driver and coil malfunctions is disclosed. A dielectric etch system includes a plasma chamber in which a semiconductor wafer is placed to remove dielectric therefrom, and a number of coils positioned around the c... | 05/11/2004 |
| 6689930 | Method and apparatus for cleaning an exhaust line in a semiconductor processing system An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor proces... | 02/10/2004 |
| 6680420 | Apparatus for cleaning an exhaust line in a semiconductor processing system An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing ... | 01/20/2004 |
| 6673199 | Shaping a plasma with a magnetic field to control etch rate uniformity A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnet... | 01/06/2004 |
| 6660342 | Pulsed electromagnetic energy method for forming a film A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by micr... | 12/09/2003 |
| 6620290 | Plasma process apparatus A plurality of microwave introduction windows are placed at the top wall of the reaction chamber. Microwaves of the same power are introduced into, e.g., two microwave introduction windows that are equivalent in location relationship with respect to the s... | 09/16/2003 |
| 6576063 | Apparatus and method for use in manufacturing a semiconductor device An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to unifo... | 06/10/2003 |
| 6568346 | Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby e... | 05/27/2003 |
| 6561198 | Method and installation for treating a metal part surface In this method for the surface treatment of a metal part (12) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber (16), in which the part to be treated is placed, is filled with a low-pressure reducing gas mixture, a static magnetic fie... | 05/13/2003 |
| 6503364 | Plasma processing apparatus In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magneti... | 01/07/2003 |
| 6475333 | Discharge plasma processing device A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum cha... | 11/05/2002 |
| 6454912 | Method and apparatus for the fabrication of ferroelectric films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with l... | 09/24/2002 |
| 6444087 | Plasma etching system A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these ... | 09/03/2002 |
| 6436230 | Process device A process device and a method for processing a substrate. A dipole ring magnet (DRM) is arranged in a manner so that a leakage magnetic field in the neighborhood of the process device and at a position a prescribed distance therefrom is minimized. The dip... | 08/20/2002 |
| 6432819 | Method and apparatus of forming a sputtered doped seed layer The present invention generally provides a method and apparatus for forming a doped layer on a substrate to improve uniformity of subsequent deposition thereover. Preferably, the layer is deposited by a sputtering process, such as physical vapor depositio... | 08/13/2002 |
| 6431114 | Method and apparatus for plasma processing The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such a... | 08/13/2002 |
