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| Number | Title | Issue Date |
| 7748344 | Segmented resonant antenna for radio frequency inductively coupled plasmas An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially co... | 07/06/2010 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7413627 | Deposition chamber and method for depositing low dielectric constant films An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is deliver... | 08/19/2008 |
| 7411148 | Plasma generation apparatus A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor ... | 08/12/2008 |
| 7374648 | Single piece coil support assemblies, coil constructions and methods of assembling coil constructions The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the shield. A second insulator is disposed between the shield and a coil a... | 05/20/2008 |
| 7354501 | Upper chamber for high density plasma CVD The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle ... | 04/08/2008 |
| 7347900 | Chemical vapor deposition apparatus and method A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the... | 03/25/2008 |
| 7342239 | Ion implanation method and device using thereof An ion implantation method and device for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is provided, then a first shape of cross-section and a first ion density distr... | 03/11/2008 |
| 7331306 | Plasma processing method and apparatus A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber while maintaining the interior of the vacuum chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil ... | 02/19/2008 |
| 7285916 | Multi chamber plasma process system A multi-chamber plasma process system includes a plurality of process chambers, each of which has an inductively coupled plasma generator. The inductively coupled plasma generator is electrically connected to a main power supply through a first impedance matcher. Th... | 10/23/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7205240 | HDP-CVD multistep gapfill process A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average mol... | 04/17/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7193893 | Write once read only memory employing floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra... | 03/20/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7156950 | Gas diffusion plate for use in ICP etcher A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing th... | 01/02/2007 |
| 7150805 | Plasma process device A plasma CVD system S includes: a matching circuit 16 that matches impedance of a RF generator 1 to impedance of a discharge electrode 2 so that incident power to become incident to the discharge electrode 2 from the RF generator 1... | 12/19/2006 |
| 7137354 | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support s... | 11/21/2006 |
| 7135421 | Atomic layer-deposited hafnium aluminum oxide A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos... | 11/14/2006 |
| 7112352 | Apparatus and method for depositing large area coatings on planar surfaces A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plur... | 09/26/2006 |
| 7105059 | Reaction apparatus for atomic layer deposition A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas,... | 09/12/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7094316 | Externally excited torroidal plasma source A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally ... | 08/22/2006 |
| 7074298 | High density plasma CVD chamber The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma pr... | 07/11/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 7037376 | Backflush chamber clean A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber thro... | 05/02/2006 |
| 7013834 | Plasma treatment system A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing sp... | 03/21/2006 |
| 7011711 | Chemical vapor deposition reactor A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. ... | 03/14/2006 |
| 6969953 | System and method for inductive coupling of an expanding thermal plasma A method is provided for generating plasma using a plasma generator system. The method includes the steps of introducing energy and a reactant to a plasma generation apparatus of the plasma generator system for generating plasma, and expanding and inductively coupli... | 11/29/2005 |
| 6967154 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 11/22/2005 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6955725 | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reacti... | 10/18/2005 |
| 6953730 | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 10/11/2005 |
| 6948448 | Apparatus and method for depositing large area coatings on planar surfaces A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plur... | 09/27/2005 |
| 6943879 | Method for monitoring and/or controlling the status of a plasma in a plasma spectrometer and spectrometer for implementing such a method A method for monitoring and/or controlling the positioning and/or condition of a plasma in a plasma spectrometer, which comprises: acquiring image data of the plasma through a video-camera (7), and a) displaying on a display device (... | 09/13/2005 |
| 6939804 | Formation of composite tungsten films Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer. ... | 09/06/2005 |
