Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 8006640 | Plasma processing apparatus and plasma processing method A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna ... | 08/30/2011 |
| 7513215 | Systems and methods for the production of highly tetrahedral amorphous carbon coatings The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it featu... | 04/07/2009 |
| 7493869 | Very large area/volume microwave ECR plasma and ion source The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cylcotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applicati... | 02/24/2009 |
| 7431797 | Plasma reactor with a dynamically adjustable plasma source power applicator A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the cei... | 10/07/2008 |
| 7430984 | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region... | 10/07/2008 |
| 7426900 | Integrated electrostatic inductive coupling for plasma processing An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive co... | 09/23/2008 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7404991 | Device and control method for micro wave plasma processing A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave ref... | 07/29/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| 7367281 | Plasma antenna The plasma antenna is designed to allow connection between electric elements within the antenna to be varied without changing the construction of the antenna during a chemical vapor deposition process, thereby maximizing efficiency of a cleaning or deposition proces... | 05/06/2008 |
| 7363876 | Multi-core transformer plasma source A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and... | 04/29/2008 |
| 7354501 | Upper chamber for high density plasma CVD The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle ... | 04/08/2008 |
| 7338577 | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber... | 03/04/2008 |
| 7338575 | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected ... | 03/04/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7311796 | Plasma processing apparatus A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber suc... | 12/25/2007 |
| 7312415 | Plasma method with high input power A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside... | 12/25/2007 |
| 7305934 | Plasma treatment apparatus and plasma generation method A plasma processing apparatus includes a table (22) on which a processing target (W) is to be placed, a processing vessel (11) where the table is to be accommodated, and a power feed unit (40) for supplying a high-frequency electromagnetic field... | 12/11/2007 |
| 7302910 | Plasma apparatus and production method thereof A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromag... | 12/04/2007 |
| 7285758 | Rapid thermal processing lamp and method for manufacturing the same A method and system for inductively coupling energy to a heating filament (7A′, 7B′, 7C′, 7A, 7B, 7C) in a thermal processing environment. By applying AC power to a coil antenna (11) and inductive coupling to a ... | 10/23/2007 |
| 7282454 | Switched uniformity control A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the... | 10/16/2007 |
| 7273638 | High density plasma oxidation A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-b... | 09/25/2007 |
| 7255062 | Pseudo surface microwave produced plasma shielding system A pseudo surface microwave produced plasma shielding system is a simple device that creates a prescribed plasma environment with a prescribed plasma density gradient, and protects an object surrounded by this environment as a shield. Pseudo surface microwaves intera... | 08/14/2007 |
| 7255774 | Process apparatus and method for improving plasma production of an inductively coupled plasma A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber pro... | 08/14/2007 |
| 7223321 | Faraday shield disposed within an inductively coupled plasma etching apparatus An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber w... | 05/29/2007 |
| 7217337 | Plasma process chamber and system The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a sub... | 05/15/2007 |
| 7166200 | Method and apparatus for an improved upper electrode plate in a plasma processing system The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion... | 01/23/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7156950 | Gas diffusion plate for use in ICP etcher A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing th... | 01/02/2007 |
| 7158848 | Process monitoring device for sample processing apparatus and control method of sample processing apparatus A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection tim... | 01/02/2007 |
| 7153444 | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor Provided is a method and apparatus for controlling a bias voltage over a wide range and for de-coupling dual radio frequency (RF) currents to allow for independent control of plasma density and ion energy of a plasma for processing a substrate. An exemplary apparatu... | 12/26/2006 |
| 7135089 | Method and apparatus for plasma processing A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the ... | 11/14/2006 |
| 7128805 | Multiple elliptical ball plasma apparatus A plasma generating device, has a plurality of cavities shaped like half-ellipsoids, a plasma cavity, and microwave sources. The present invention takes advantage of geometrical properties of the propagation of electromagnetic waves by enclosing an electromagnetic f... | 10/31/2006 |
| 7126808 | Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurali... | 10/24/2006 |
| 7100532 | Plasma production device and method and RF driver circuit with adjustable duty cycle A reactive circuit is disclosed as part of a method and system for generating high density plasma that does not require the use of a dynamic matching network for directly driving a plasma exhibiting a dynamic impedance. The reactive network is designed to provide a ... | 09/05/2006 |
| 7097735 | Plasma processing device In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot a... | 08/29/2006 |
| 7097782 | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least som... | 08/29/2006 |
| 7088047 | Inductively coupled plasma generator having low aspect ratio An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the rea... | 08/08/2006 |
| 7074298 | High density plasma CVD chamber The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma pr... | 07/11/2006 |
