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| Number | Title | Issue Date |
| 7857907 | Methods of forming silicon nanocrystals by laser annealing The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first ... | 12/28/2010 |
| 7819974 | Growth of textured gallium nitride thin films and nanowires on polycrystalline substrates A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of a... | 10/26/2010 |
| 7601216 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a patterned noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web with a patterned mask overlaid thereto to a first ion beam having an energy not higher than... | 10/13/2009 |
| 7601217 | Method of fabricating an epitaxially grown layer A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of w... | 10/13/2009 |
| 7459026 | Light irradiation apparatus, crystallization apparatus, crystallization method and device A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical syste... | 12/02/2008 |
| 7442252 | Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1B | 10/28/2008 |
| 7439197 | Method of fabricating a capacitor A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature o... | 10/21/2008 |
| 7438790 | Electrode for electrolysis and process for producing the same The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate having at least one surface shape selected from the group consisting of... | 10/21/2008 |
| 7431964 | Method of forming a porous metal catalyst on a substrate for nanotube growth A method is provided for forming a porous metal catalyst (44) on a substrate (42) for nanotube (84) growth in an emissive display. The method comprises depositing a metal (44) onto a surface of a substrate (12) at an angle (Θ) to ... | 10/07/2008 |
| 7427556 | Method to planarize and reduce defect density of silicon germanium A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposi... | 09/23/2008 |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7416604 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface o... | 08/26/2008 |
| 7410676 | Chemical vapor deposition method A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the ch... | 08/12/2008 |
| 7404858 | Method for epitaxial growth of silicon carbide A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and... | 07/29/2008 |
| 7402206 | Method of synthesizing a compound of the formula MAX, film of the compound and its use A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing ... | 07/22/2008 |
| 7399357 | Atomic layer deposition using multilayers A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber vol... | 07/15/2008 |
| 7396409 | Acicular silicon crystal and process for producing the same By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively fo... | 07/08/2008 |
| 7387678 | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0 | 06/17/2008 |
| 7374617 | Atomic layer deposition methods and chemical vapor deposition methods The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbe... | 05/20/2008 |
| 7368343 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 05/06/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7361221 | Light irradiation apparatus, crystallization apparatus, crystallization method, semiconductor device and light modulation element A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with... | 04/22/2008 |
| 7362784 | Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of th... | 04/22/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7359412 | Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric... | 04/15/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7291218 | Method of fabricating orientation film for liquid crystal display device A method of fabricating an orientation film for a liquid crystal display device is provided. An orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generation element is provided. The substrate is placed on a stage in a vacuum ... | 11/06/2007 |
| 7288153 | Method of fabricating orientation film for crystal display device A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator and a vacuum chamber having a stage on which the substrate is dispos... | 10/30/2007 |
| 7283716 | Strain tunable, flexible photonic crystals A device is described based on flexible photonic crystal, which is comprised of a periodic array of high index dielectric material embedded in a flexible polymer. Dynamic, real time tunability is achieved by the application of a variable force with a MEMS actuator o... | 10/16/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7276121 | Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ... | 10/02/2007 |
| 7255746 | Nitrogen sources for molecular beam epitaxy MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in ... | 08/14/2007 |
| 7253451 | III-nitride semiconductor light emitting device The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a... | 08/07/2007 |
| 7241470 | Method for monitoring the course of a process using a reactive gas containing one or several hydrocarbons The method applies to a process such as cementation or chemical vapor infiltration or deposition, the process being carried out in an oven and the method comprising setting operating parameters of the oven, introducing a reagent gas into the oven, the reagent gas co... | 07/10/2007 |
| 7238232 | Growth of textured gallium nitride thin films on polycrystalline substrates A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of a... | 07/03/2007 |
| 7235130 | Apparatus and method for diamond production An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measur... | 06/26/2007 |
