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| Number | Title | Issue Date |
| 7396404 | Methods for forming alkali halide ingots into rectangular plates The present disclosure provides methods for forging cylindrical alkali halide melt-grown single-crystal-type ingots into rectangular blocks. The resulting rectangular blocks are devoid of peripheral cracks and fissures, and possess uniform properties and reduced lev... | 07/08/2008 |
| 7390359 | Nitride semiconductor wafer A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconducto... | 06/24/2008 |
| 7357837 | GaN single crystal substrate and method of making the same The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing st... | 04/15/2008 |
| 7342225 | Crystallographic metrology and process control A system (70) for crystallography including a sample holder (74), an electron source (76) for generating an electron beam, and a scanning actuator (80) for controlling the relative movement between the electron beam and the crystalline sa... | 03/11/2008 |
| 7323053 | Pulling-down apparatus and container therefor It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom s... | 01/29/2008 |
| 7306675 | Method for manufacturing semiconductor substrate A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer... | 12/11/2007 |
| 7285168 | Method and apparatus for the measurement, orientation and fixation of at least one single crystal For the measurement, orientation and fixation of at least one single crystal, it is the object of the invention to ensure increased accuracy in the determination of crystallographic orientation and oriented fixation regardless of the outer geometry of the single cry... | 10/23/2007 |
| 7258743 | Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an ini... | 08/21/2007 |
| 7226506 | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are ... | 06/05/2007 |
| 7221037 | Method of manufacturing group III nitride substrate and semiconductor device The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) formi... | 05/22/2007 |
| 7198670 | Method of fabricating board having periodically poled region A polarization inverting region is formed by using a board comprising a single crystal of lithium tatalate of a stoichiometric composition or near to the stoichiometric composition and applying a direct current electric field having an electric field intensity equal... | 04/03/2007 |
| 7194801 | Thin-film battery having ultra-thin electrolyte and associated method A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is suppl... | 03/27/2007 |
| 7135074 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or... | 11/14/2006 |
| 7063742 | N-type semiconductor diamond and its fabrication method A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen s... | 06/20/2006 |
| 6994747 | Method for producing optical member An optical member manufacturing method of the present invention has a growth step of growing an ingot of a fluoride crystal, a plane orientation measurement step of measuring two or more crystal plane orientations of the ingot, a cutout step of cutting out an optica... | 02/07/2006 |
| 6979938 | Electronic device formed from a thin film with vertically oriented columns with an insulating filler material A thin film device comprises: a substrate and a thin film having a thickness formed on the substrate, wherein the thickness of the thin film is at least 1 micrometer, a crystal structure having crystals with a grain size formed within the thin film, wherein the grai... | 12/27/2005 |
| 6962613 | Low-temperature fabrication of thin-film energy-storage devices A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material... | 11/08/2005 |
| 6929693 | Single crystals, method for making single crystals by growth in solution and uses The invention relates to a tetragonal single crystal (1, 11) of composition: Z(H,D)2MO4 where Z is an element or a group of elements, or a mixture of elements and/or of groups of elements chosen from the group K, N(H,... | 08/16/2005 |
| 6924509 | Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to ... | 08/02/2005 |
| 6924921 | Layered photonic crystals A three dimensional photonic crystal and layer-by-layer processes of fabricating the photonic crystal. A substrate is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated substrate ... | 08/02/2005 |
| 6916373 | Semiconductor manufacturing method A method for manufacturing a semiconductor using a wafer carrier, wherein the temperature of a wafer can be made uniform with few differences in surface composition distribution. A plurality of grooves are formed at the bottom of a wafer pocket of a wafer carrier, t... | 07/12/2005 |
| 6866713 | Seed crystals for pulling single crystal silicon The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon. | 03/15/2005 |
| 6863728 | Apparatus for growing low defect density silicon carbide A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first s... | 03/08/2005 |
| 6861144 | Polycrystalline silicon and process and apparatus for producing the same Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed... | 03/01/2005 |
| 6824611 | Method and apparatus for growing silicon carbide crystals A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from t... | 11/30/2004 |
| 6800135 | ZnO/sapphire substrate and method for manufacturing the same A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1-2 0) planes of the ZnO epitaxial film are disposed with an interpla... | 10/05/2004 |
| 6752868 | Layer-by-layer assembly of photonic crystals A three dimensional photonic crystal and layer-by-layer processes of fabricating the photonic crystal. A templated substrate is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated ... | 06/22/2004 |
| 6743292 | Oriented conductive oxide electrodes on SiO2/Si and glass A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material ... | 06/01/2004 |
| 6685773 | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a orienta... | 02/03/2004 |
| 6670036 | Silicon seed crystal and method for producing silicon single crystal There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or less, a silicon seed crystal which is used for the Czochrals... | 12/30/2003 |
| 6617668 | Methods and devices using group III nitride compound semiconductor A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semicond... | 09/09/2003 |
| 6607593 | Method of manufacturing a mono-crystalline silicon ball When a crystalline nucleus generated from an under-cooled silicon droplet is grown up to a mono-crystalline silicon ball, a critical under-cooling ƊTcr is determined in response to a diameter d of the silicon droplet so as to satisfy the relat... | 08/19/2003 |
| 6558465 | Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage In an optical element which includes a single crystal having at least one flat light-transmitting end surface, the at least one light-transmitting end surface is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a ... | 05/06/2003 |
| 6508880 | Apparatus for growing low defect density silicon carbide A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During ... | 01/21/2003 |
| 6461003 | Corner cube arrays and manufacture thereof A corner cube array device (20) is disclosed having a silicon substrate (30) with a generally cubic crystal lattice. A number of silicon crystal projections (62a, 62b, 62c, 62d, 62e, 62f, 62g) extend from the substrate (30). The projections (62a, 62b, 62c... | 10/08/2002 |
| 6458206 | Cantilever with whisker-grown probe and method for producing thereof AFM/STM probes are based on whiskers grown by the vapor-liquid-solid (VLS) mechanism. Silicon cantilevers oriented along the crystallographic plane (111) are prepared from silicon-on-insulator structures that contain a thin layer (111) on a (100) substrat... | 10/01/2002 |
| 6428621 | Method for growing low defect density silicon carbide A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation techniques, is preferably divided into two stages of growth. Durin... | 08/06/2002 |
| 6372981 | Semiconductor substrate, solar cell using same, and fabrication methods thereof A group-IV semiconductor substrate has an inclined front surface, the inclination being toward a direction differing from the crystal lattice direction. The substrate is cleansed by heating in the presence of a gas including a compound of the group-I... | 04/16/2002 |
| 6329070 | Fabrication of periodic surface structures with nanometer-scale spacings The periodic stress and strain fields produced by a pure twist grain boundary between two single crystals bonded together in the form of a bicrystal are used to fabricate a two-dimensional surface topography with controllable, nanometer-scale feature spac... | 12/11/2001 |
| 6312819 | Oriented conductive oxide electrodes on SiO2/Si and glass A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxid... | 11/06/2001 |
