Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 7442255 | Crucible for a device for producing a block of crystalline material and method for producing same The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bo... | 10/28/2008 |
| 7422631 | Mould parts of silicon nitride and method for producing such mould parts The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity bet... | 09/09/2008 |
| 7383696 | Silica glass crucible with bubble-free and reduced bubble growth wall A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the cr... | 06/10/2008 |
| 7381397 | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment... | 06/03/2008 |
| 7361223 | Method and apparatus for eliminating a display defect in a liquid crystal display device A method for eliminating a display defect in a liquid crystal display device includes disposing a liquid crystal panel adhered with a polarizer into a first buffer chamber, increasing pressure of the first buffer chamber, communicating the first buffer chamber with ... | 04/22/2008 |
| 7344597 | Vapor-phase growth apparatus A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward... | 03/18/2008 |
| 7344596 | System and method for crystal growing To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib... | 03/18/2008 |
| 7335260 | Laser annealing apparatus A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser anneali... | 02/26/2008 |
| 7318865 | Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used ... | 01/15/2008 |
| 7311778 | Single scan irradiation for crystallization of thin films A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generat... | 12/25/2007 |
| 7299658 | Quartz glass crucible for the pulling up of silicon single crystal A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration,... | 11/27/2007 |
| 7270706 | Roll crusher to produce high purity polycrystalline silicon chips A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The ... | 09/18/2007 |
| 7235128 | Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the o... | 06/26/2007 |
| 7235132 | Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials,... | 06/26/2007 |
| 7214270 | Crystallization apparatus, crystallization method, device and phase modulation element The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inv... | 05/08/2007 |
| 7201801 | Heater for manufacturing a crystal The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing ... | 04/10/2007 |
| 7195671 | Thermal shield An apparatus for growing crystals includes a sealed chamber having a crucible assembly and a seed holder disposed therein. The crucible assembly is adapted to contain a melt therein and the seed holder is selectively positionable within the chamber from a first posi... | 03/27/2007 |
| 7195668 | Crucible for the growth of silicon single crystal and process for the growth thereof A crucible for the growth of single crystals by the Czochralski method which can enhance the productivity, yield and quality of crystal and a single crystal growing method, wherein the crucible has an inner bottom surface, the profile of which has at least one raise... | 03/27/2007 |
| 7179331 | Crystal growing equipment The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induc... | 02/20/2007 |
| 7160387 | High purity silica crucible by electrolytic refining, and its production method and pulling method This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less th... | 01/09/2007 |
| 7153487 | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment... | 12/26/2006 |
| 7014706 | Crystal forming apparatus and method for using same A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant ... | 03/21/2006 |
| 7011708 | Heat transfer device A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constant... | 03/14/2006 |
| 6969502 | Method and device for growing large-volume oriented monocrystals In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering... | 11/29/2005 |
| 6916370 | Quartz glass crucible for pulling up silicon single crystal and method for producing the same An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a cry... | 07/12/2005 |
| 6911080 | Evaluation process of reactivity of silica glass with silicon melt and vibration at its surface, and silica glass crucible not causing the surface vibration A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on ... | 06/28/2005 |
| 6866714 | Large size semiconductor crystal with low dislocation density A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive bo... | 03/15/2005 |
| 6860940 | Automated macromolecular crystallization screening An automated macromolecular crystallization screening system wherein a multiplicity of reagent mixes are produced. A multiplicity of analysis plates is produced utilizing the reagent mixes combined with a sample. The analysis plates are incubated to promote growth o... | 03/01/2005 |
| 6852162 | Laser annealing apparatus A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a v... | 02/08/2005 |
| 6835247 | Rod replenishment system for use in single crystal silicon production A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes. ... | 12/28/2004 |
| 6830618 | Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. ... | 12/14/2004 |
| 6824611 | Method and apparatus for growing silicon carbide crystals A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from t... | 11/30/2004 |
| 6824609 | Liquid phase growth method and liquid phase growth apparatus A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flo... | 11/30/2004 |
| 6818060 | Robot for mixing crystallization trial matrices A matrix mixing robot includes a plurality of precision pumps (such as precision syringe pumps), a distributor and a processor system. Each pump, under the control of the processor system, draws an associated stock solution from a stock solution source, and pumps th... | 11/16/2004 |
| 6797061 | Quartz glass crucible for pulling up silicon single crystal and production method therefor Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible... | 09/28/2004 |
| 6797062 | Heat shield assembly for a crystal puller A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the m... | 09/28/2004 |
| 6780244 | Method for producing a semiconductor crystal A large semiconductor crystal is produced by charging a raw material into a crucible in a reactor tube, sealing the reactor tube with a flange on an open end of the tube, pressurizing the interior of the tube to an elevated pressure with an inert gas, heating the tu... | 08/24/2004 |
| 6755911 | Crucible made of carbon fiber-reinforced carbon composite material for single crystal pulling apparatus A crucible 1 made of a C/C composite material for use in single crystal pulling, the crucible 1 having a lateral cylindrical portion 11 and a bottom portion 12 integrally formed as multiple layers wound by a filament winding method, in wh... | 06/29/2004 |
| 6743293 | Cruicible and growth method for polycrystal silicon using same A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material sili... | 06/01/2004 |
| 6726769 | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition ... | 04/27/2004 |