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Patent No. 5970981

Mouthguard made at least partially from an edible candy

A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.

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Class 117/900 - APPARATUS CHARACTERIZED BY COMPOSITION OR TREATMENT THEREOF (E.G., SURFACE FINISH, SURFACE COATING)


Subclass of Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Definition: A collection of art in which an apparatus is specified in
No. of patents: 392
Last issue date: 10/28/2008


1                    
NumberTitleIssue Date
7442255Crucible for a device for producing a block of crystalline material and method for producing same
The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bo...
10/28/2008
7422631Mould parts of silicon nitride and method for producing such mould parts
The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity bet...
09/09/2008
7383696Silica glass crucible with bubble-free and reduced bubble growth wall
A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the cr...
06/10/2008
7381397Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment...
06/03/2008
7361223Method and apparatus for eliminating a display defect in a liquid crystal display device
A method for eliminating a display defect in a liquid crystal display device includes disposing a liquid crystal panel adhered with a polarizer into a first buffer chamber, increasing pressure of the first buffer chamber, communicating the first buffer chamber with ...
04/22/2008
7344597Vapor-phase growth apparatus
A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward...
03/18/2008
7344596System and method for crystal growing
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib...
03/18/2008
7335260Laser annealing apparatus
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser anneali...
02/26/2008
7318865Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element
A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used ...
01/15/2008
7311778Single scan irradiation for crystallization of thin films
A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generat...
12/25/2007
7299658Quartz glass crucible for the pulling up of silicon single crystal
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration,...
11/27/2007
7270706Roll crusher to produce high purity polycrystalline silicon chips
A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The ...
09/18/2007
7235128Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the o...
06/26/2007
7235132Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals
In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials,...
06/26/2007
7214270Crystallization apparatus, crystallization method, device and phase modulation element
The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inv...
05/08/2007
7201801Heater for manufacturing a crystal
The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing ...
04/10/2007
7195671Thermal shield
An apparatus for growing crystals includes a sealed chamber having a crucible assembly and a seed holder disposed therein. The crucible assembly is adapted to contain a melt therein and the seed holder is selectively positionable within the chamber from a first posi...
03/27/2007
7195668Crucible for the growth of silicon single crystal and process for the growth thereof
A crucible for the growth of single crystals by the Czochralski method which can enhance the productivity, yield and quality of crystal and a single crystal growing method, wherein the crucible has an inner bottom surface, the profile of which has at least one raise...
03/27/2007
7179331Crystal growing equipment
The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induc...
02/20/2007
7160387High purity silica crucible by electrolytic refining, and its production method and pulling method
This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less th...
01/09/2007
7153487Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment...
12/26/2006
7014706Crystal forming apparatus and method for using same
A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant ...
03/21/2006
7011708Heat transfer device
A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constant...
03/14/2006
6969502Method and device for growing large-volume oriented monocrystals
In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering...
11/29/2005
6916370Quartz glass crucible for pulling up silicon single crystal and method for producing the same
An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a cry...
07/12/2005
6911080Evaluation process of reactivity of silica glass with silicon melt and vibration at its surface, and silica glass crucible not causing the surface vibration
A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on ...
06/28/2005
6866714Large size semiconductor crystal with low dislocation density
A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive bo...
03/15/2005
6860940Automated macromolecular crystallization screening
An automated macromolecular crystallization screening system wherein a multiplicity of reagent mixes are produced. A multiplicity of analysis plates is produced utilizing the reagent mixes combined with a sample. The analysis plates are incubated to promote growth o...
03/01/2005
6852162Laser annealing apparatus
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a v...
02/08/2005
6835247Rod replenishment system for use in single crystal silicon production
A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes. ...
12/28/2004
6830618Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. ...
12/14/2004
6824611Method and apparatus for growing silicon carbide crystals
A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from t...
11/30/2004
6824609Liquid phase growth method and liquid phase growth apparatus
A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flo...
11/30/2004
6818060Robot for mixing crystallization trial matrices
A matrix mixing robot includes a plurality of precision pumps (such as precision syringe pumps), a distributor and a processor system. Each pump, under the control of the processor system, draws an associated stock solution from a stock solution source, and pumps th...
11/16/2004
6797061Quartz glass crucible for pulling up silicon single crystal and production method therefor
Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible...
09/28/2004
6797062Heat shield assembly for a crystal puller
A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the m...
09/28/2004
6780244Method for producing a semiconductor crystal
A large semiconductor crystal is produced by charging a raw material into a crucible in a reactor tube, sealing the reactor tube with a flange on an open end of the tube, pressurizing the interior of the tube to an elevated pressure with an inert gas, heating the tu...
08/24/2004
6755911Crucible made of carbon fiber-reinforced carbon composite material for single crystal pulling apparatus
A crucible 1 made of a C/C composite material for use in single crystal pulling, the crucible 1 having a lateral cylindrical portion 11 and a bottom portion 12 integrally formed as multiple layers wound by a filament winding method, in wh...
06/29/2004
6743293Cruicible and growth method for polycrystal silicon using same
A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material sili...
06/01/2004
6726769Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition ...
04/27/2004
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