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| Number | Title | Issue Date |
| 8152918 | Methods for epitaxial silicon growth Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral grow... | 04/10/2012 |
| 8147612 | Method for manufacturing gallium nitride crystal and gallium nitride wafer There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dis... | 04/03/2012 |
| 8137458 | Epitaxial growth of ZnO with controlled atmosphere A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an ... | 03/20/2012 |
| 8137459 | Method for producing nanoparticles for magnetic fluids by electron-beam evaporation and condensation in vacuum, a magnetic fluid producing method and magnetic fluid produced according to said method The inventive method for producing nanoparticles for ferrofluids by electron-beam evaporation and condensation in vacuum, consists in evaporating an initial solid material and in fixing nanoparticles to a cooled substrate by means of a solidifiable carrier during va... | 03/20/2012 |
| 8133320 | Diamond heat sink in a laser A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced nitrogen content, is a reduced carbon-13 content, is a monocrystalline or ... | 03/13/2012 |
| 8123859 | Method and apparatus for producing large, single-crystals of aluminum nitride A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The a... | 02/28/2012 |
| 8123858 | Manufacturing method of semiconductor device and substrate processing apparatus To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying a... | 02/28/2012 |
| 8048224 | Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy ... | 11/01/2011 |
| 8048223 | Grown diamond mosaic separation The present invention provides in one example embodiment a synthetic diamond and a method of growing such a diamond on a plurality of seed diamonds, implanting the grown diamond with ions, and separating the grown diamond from the plurality of seed diamonds. ... | 11/01/2011 |
| 8043429 | Method for fabricating filament type high-temperature superconducting wire The present invention relates to a method for fabricating a filament type high-temperature superconducting wire in which a thin film type high-temperature superconducting wire is fabricated into a filament shape suitable for use with alternating current. The method ... | 10/25/2011 |
| 8025729 | Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to t... | 09/27/2011 |
| 8021482 | Method for eliminating the precipitates in a II-IV semiconductor material by annealing A method for eliminating precipitates contained in an II-VI solid semiconductor material, in which the solid semiconductor material is a congruent sublimation solid semiconductor material, the method including: providing an inert gas flow; heating the solid semicond... | 09/20/2011 |
| 8007588 | Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for ex... | 08/30/2011 |
| 7998273 | Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process pre... | 08/16/2011 |
| 7947128 | Atomic layer epitaxy processed insulation In one embodiment the present invention provides for a method for depositing a thin film layer onto a composite tape 16, that comprises depositing at least one thin film layer of physically enhancing material 30 onto at least one portion of the composi... | 05/24/2011 |
| 7896965 | Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth su... | 03/01/2011 |
| 7879148 | System and method for producing synthetic diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 02/01/2011 |
| 7833348 | Temperature control method of epitaxial growth apparatus An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After cali... | 11/16/2010 |
| 7776154 | Preparation method of a coating of gallium nitride The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a ... | 08/17/2010 |
| 7731796 | Nitrogen semiconductor compound and device fabricated using the same Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. Th... | 06/08/2010 |
| 7695563 | Pulsed deposition process for tungsten nucleation In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on... | 04/13/2010 |
| 7686885 | Patterned nanorod arrays and methods of making same In some embodiments, the present invention addresses the challenges of fabricating nanorod arrays comprising a heterogeneous composition and/or arrangement of the nanorods. In some embodiments, the present invention is directed to multicomponent nanorod arrays compr... | 03/30/2010 |
| 7682450 | Stacked semiconductor device and related method A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes s... | 03/23/2010 |
| 7674335 | Method of producing high quality relaxed silicon germanium layers A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a d... | 03/09/2010 |
| 7645339 | Silicon-containing layer deposition with silicon compounds Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrat... | 01/12/2010 |
| 7628855 | Atomic layer deposition using electron bombardment Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor. ... | 12/08/2009 |
| 7618492 | Methods of forming nanocrystals Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked regions. The nanocrystals may be formed by exposing the masked workpiece to... | 11/17/2009 |
| 7608147 | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined si... | 10/27/2009 |
| 7594966 | Method for producing a single crystal A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a defect-free region, which is outside an OSF region, to occur in a ring shape in... | 09/29/2009 |
| 7553370 | Crystal growth method for nitride semiconductor and formation method for semiconductor device Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth pha... | 06/30/2009 |
| 7547359 | Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is depressurized by gas evacuation using a vacuum pump 5 to ... | 06/16/2009 |
| 7537659 | Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure. ... | 05/26/2009 |
| 7481880 | Mask and method for crystallizing amorphous silicon A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser beam onto the amorphous silicon layer through the mask to form a fir... | 01/27/2009 |
| 7479187 | Method for manufacturing silicon epitaxial wafer A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (12). A silicon deposit deposited in the reac... | 01/20/2009 |
| 7473316 | Method of growing nitrogenous semiconductor crystal materials What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an e... | 01/06/2009 |
| 7455730 | Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crys... | 11/25/2008 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and ma... | 10/28/2008 |
| 7442252 | Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1B | 10/28/2008 |
| 7438762 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of t... | 10/21/2008 |
| 7438760 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline... | 10/21/2008 |
