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| Number | Title | Issue Date |
| 8038794 | Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt conta... | 10/18/2011 |
| 8038795 | Epitaxial growth and cloning of a precursor chiral nanotube A precursor chiral nanotube with a specified chirality is grown using an epitaxial process and then cloned. A substrate is provided of crystal material having sheet lattice properties complementary to the lattice properties of the selected material for the nanotube.... | 10/18/2011 |
| 7682449 | Heterostructure semiconductor nanowires and method for producing the same Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal see... | 03/23/2010 |
| 7572332 | Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one ap... | 08/11/2009 |
| 7442252 | Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1B | 10/28/2008 |
| 7393410 | Method of manufacturing nano-wire There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference ... | 07/01/2008 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 ... | 06/24/2008 |
| 7371281 | Silicon carbide single crystal and method and apparatus for producing the same A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course o... | 05/13/2008 |
| 7351285 | Method and system for forming a variable thickness seed layer A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thick... | 04/01/2008 |
| 7335259 | Growth of single crystal nanowires The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of ... | 02/26/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7311776 | Localized synthesis and self-assembly of nanostructures Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, ... | 12/25/2007 |
| 7303815 | Functional bimorph composite nanotapes and methods of fabrication A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons... | 12/04/2007 |
| 7303628 | Nanocrystals with linear and branched topology Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles and distances. Such control allows investigation of potential applic... | 12/04/2007 |
| 7288150 | Homogeneous incorporation of activator element in a storage phosphor A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or activator is incorporated more homogeneously in amorphous and in crystalline... | 10/30/2007 |
| 7285378 | Juxtaposed island manufacturing method by means of self-organised deposition on a substrate and structure obtained using said method The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimens... | 10/23/2007 |
| 7258807 | Controlled growth of gallium nitride nanostructures A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotub... | 08/21/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7211143 | Sacrificial template method of fabricating a nanotube Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates ove... | 05/01/2007 |
| 7169690 | Method of producing crystalline semiconductor material and method of fabricating semiconductor device Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse la... | 01/30/2007 |
| 7153361 | Production method of opto-electronic device array An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are transferred to a first substrate to be arranged in an array substantially. Acti... | 12/26/2006 |
| 7144793 | Method of producing crystalline semiconductor material and method of fabricating semiconductor device Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse la... | 12/05/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7105051 | High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents The present invention provides substantially monodisperse colloidal nanocrystals and new preparative methods for the synthesis of substantially monodisperse colloidal nanocrystals. These synthetic methods afford the ability to tune nanocrystal size and size distribu... | 09/12/2006 |
| 7105053 | Energy efficient method for growing polycrystalline silicon Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surround... | 09/12/2006 |
| 7022184 | Atomic layer CVD Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequent... | 04/04/2006 |
| 7018549 | Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment ... | 03/28/2006 |
| 7001460 | Semiconductor element and its manufacturing method In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters ar... | 02/21/2006 |
| 6923075 | Methods for sampling and testing data centers for metallic particulates The present invention is drawn to methods for sampling and/or testing for the presence of whisker-like metallic particulates in data centers or computer rooms. For example, a method for discovering the presence of an undesired whisker-like metallic particulate in a ... | 08/02/2005 |
| 6858080 | Tunable CVD diamond structures Monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications, in the form of a single crystalline diamond structure having one or more diamond layers, at least one of which is formed by a ... | 02/22/2005 |
| 6719841 | Manufacturing method for high-density magnetic data storage media A method of fabricating a high-density magnetic data-storage medium, the method comprising the steps of: (a) forming a plurality of nanodots of non-magnetic material in a regular array on a surface of a substrate, said array being notionally dividable into a plurali... | 04/13/2004 |
| 6627552 | Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same The present invention provides a method for preparing epitaxial-substrate, for growing a multilayered structure of GaN based semiconductor layers on the epitaxial-substrate so as to construct a semiconductor device such as blue-emitting laser diode and LE... | 09/30/2003 |
| 6623559 | Method for the production of semiconductor quantum particles A method for producing compound semiconductor quantum particles from at least a metallic element selected from Groups IIA, IIB, IIIA, IVA, and VA of the Periodic Table and at least a non-oxygen reactant element selected from the group consisting of P, As,... | 09/23/2003 |
| 6596079 | III-V nitride substrate boule and method of making and using the same A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., hav... | 07/22/2003 |
| 6313015 | Growth method for silicon nanowires and nanoparticle chains from silicon monoxide Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be by thermal excitation, laser ablation, plasma or magnetro... | 11/06/2001 |
| 6221154 | Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD) A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon ... | 04/24/2001 |
| 6217649 | Continuous melt replenishment for crystal growth The invention features a method of continuous crystalline growth. A granular source material is introduced into a hopper. A volume of the granular source material exiting the hopper is disposed on a translationally moving belt. The volume of the granular ... | 04/17/2001 |
| 6130397 | Thermal plasma annealing system, and annealing process A thermal plasma annealing system comprises a radiation irradiation means for irradiating a thin film formed on a substrate with heat or radiation emitted from a thermal plasma. This annealing system enables a material relatively sensitive to high heat su... | 10/10/2000 |
| 6110275 | Manufacture of titanium carbide, nitride and carbonitride whiskers There is disclosed a method of producing, in large volume and at low cost, titanium carbide, nitride and carbonitride whiskers, with preferably submicron diameters, to be used as reinforcing material. The whiskers are suitable for use as a reinforcement m... | 08/29/2000 |
| 6090666 | Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of... | 07/18/2000 |
