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| Number | Title | Issue Date |
| 8062421 | Shaped nanocrystal particles and methods for making the same Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming ... | 11/22/2011 |
| 7976630 | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. T... | 07/12/2011 |
| 7955434 | Diamond single crystal substrate A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of ... | 06/07/2011 |
| 7955435 | Method of producing high quality relaxed silicon germanium layers A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition t... | 06/07/2011 |
| 7604697 | Heteroepitaxial growth method for gallium nitride A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the sub... | 10/20/2009 |
| 7582161 | Atomic layer deposited titanium-doped indium oxide films An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent conductive titanium-doped indium oxide may be structured as one or more... | 09/01/2009 |
| 7572331 | Method of manufacturing a wafer The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The pres... | 08/11/2009 |
| 7553368 | Process for manufacturing a gallium rich gallium nitride film A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when... | 06/30/2009 |
| 7540918 | Atomic layer deposition equipment and method An ALD (Atomic Layer Deposition) apparatus includes a chamber with a sample seated in the reaction space, a supply line providing a raw material gas, an exhaust line through which a reaction gas is exhausted, and a mass analyzer for detecting reaction gases generate... | 06/02/2009 |
| 7507293 | Photonic crystals with nanowire-based fabrication Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire material. Spaces between the nanowires are filled with a slab material, ... | 03/24/2009 |
| 7497905 | Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first... | 03/03/2009 |
| 7462239 | Low temperature load and bake Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very little of the thermal budget, such that the process is suitable for a... | 12/09/2008 |
| 7427556 | Method to planarize and reduce defect density of silicon germanium A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposi... | 09/23/2008 |
| 7402207 | Method and apparatus for controlling the thickness of a selective epitaxial growth layer Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capab... | 07/22/2008 |
| 7399356 | Method for preparation of ferroelectric single crystal film structure using deposition method A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of ... | 07/15/2008 |
| 7396410 | Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 07/08/2008 |
| 7377977 | High-purity crystal growth A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are... | 05/27/2008 |
| 7377976 | Method for growing thin oxide films A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal so... | 05/27/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7365374 | Gallium nitride material structures including substrates and methods associated with the same Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, s... | 04/29/2008 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7355208 | Nitride-based semiconductor element and method of forming nitride-based semiconductor A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in co... | 04/08/2008 |
| 7352015 | Gallium nitride materials and methods associated with the same Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between ... | 04/01/2008 |
| 7338554 | Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and n... | 03/04/2008 |
| 7339205 | Gallium nitride materials and methods associated with the same Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between ... | 03/04/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7326293 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 02/05/2008 |
| 7323050 | Method of producing lithium tantalate crystal A method of producing a lithium-tantalate crystal, wherein at least a first material containing lithium tantalate, lithium niobate or hydrogen storage alloy storing hydrogen that is subjected to a heat treatment at a temperature of T1′ that is Curie temperature or... | 01/29/2008 |
| 7316747 | Seeded single crystal silicon carbide growth and resulting crystals A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the co... | 01/08/2008 |
| 7314526 | Reaction chamber for an epitaxial reactor Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (... | 01/01/2008 |
| 7312165 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a meta... | 12/25/2007 |
| 7311775 | Method for heat-treating silicon wafer and silicon wafer This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./m... | 12/25/2007 |
| 7306674 | Nucleation of diamond films using higher diamondoids Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include iso-tetramantane [1(2)3], anti-tetramantane [121], the two enantiomers of skew-tetra... | 12/11/2007 |
| 7303628 | Nanocrystals with linear and branched topology Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles and distances. Such control allows investigation of potential applic... | 12/04/2007 |
| 7303629 | Apparatus for pulling single crystal An apparatus for pulling single crystal comprises a quartz crucible provided in a chamber for storing raw melt of a single crystal, a heater that heats the raw melt of the single crystal, and a crucible driving unit that rotates the quartz crucible. A quartz crucibl... | 12/04/2007 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7285378 | Juxtaposed island manufacturing method by means of self-organised deposition on a substrate and structure obtained using said method The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimens... | 10/23/2007 |
| 7274025 | Detector for detecting particle beams and method for the production thereof The invention relates to a detector, and to a method for the production thereof, for detecting a high-energy and high-intensity particle beam (2), which comprises a crystalline semi-conductor plate (3) having a metal coating (4) and which is arr... | 09/25/2007 |
| 7258741 | System and method for producing synthetic diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 08/21/2007 |
| 7258742 | Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and elec... | 08/21/2007 |
