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| Number | Title | Issue Date |
| 8029620 | Methods of forming carbon-containing silicon epitaxial layers In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-con... | 10/04/2011 |
| 7922814 | Production process for high purity polycrystal silicon and production apparatus for the same In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, ... | 04/12/2011 |
| 7442355 | Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lowe... | 10/28/2008 |
| 7402207 | Method and apparatus for controlling the thickness of a selective epitaxial growth layer Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capab... | 07/22/2008 |
| 7387678 | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0 | 06/17/2008 |
| 7368014 | Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b... | 05/06/2008 |
| 7360366 | Cooling apparatus, exposure apparatus, and device fabrication method An apparatus for adjusting temperature of an object includes a heat radiation member, a deflection member to deflect heat radiation from the heat radiation member toward a region of the object, and an adjusting system to adjust temperature of the heat radiation memb... | 04/22/2008 |
| 7358163 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus ob... | 04/15/2008 |
| 7351622 | Methods of forming semiconductor device A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas ... | 04/01/2008 |
| 7313501 | Method and system for determining the location of a potential defect in a device based on a temperature profile According to one embodiment of the invention a method for determining the location of a potential defect in a device includes scanning a surface of the device with a temperature sensor while operating the device. The method also includes measuring a temperature of t... | 12/25/2007 |
| 7309642 | Metallic quantum dots fabricated by a superlattice structure A method for forming quantum dots includes forming a superlattice structure that includes at least one nanostrip protruding from the superlattice structure, providing a quantum dot substrate, transferring the at least one nanostrip to the quantum dot substrate, and ... | 12/18/2007 |
| 7286962 | Predictive monitoring method and system A method (300) for monitoring a data processing system is proposed. The method involves the measuring (306) of state parameters of the system. Indicators of the performance of the system are then inferred (324-330) from the state paramete... | 10/23/2007 |
| 7270707 | Method for the preparation of diamond, graphite or their mixture The present invention provides a method of preparation for diamond, graphite or mixtures of diamond and graphite by reduction of CO or CO2. Said method comprises a step of contacting an active metal capable of reducing a carbon source into elementary carb... | 09/18/2007 |
| 7253036 | Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film trans... | 08/07/2007 |
| 7232555 | AIGaInN single-crystal wafer AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1−(x+y)N(0 | 06/19/2007 |
| 7226509 | Method for fabricating a carrier substrate A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent pro... | 06/05/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 7186601 | Method of fabricating a semiconductor device utilizing a catalyst material solution A very thin oxide film is formed on an amorphous silicon film that is formed on a glass substrate, and an aqueous solution such as an acetate solution added with a catalyst element such as nickel by 10 to 200 ppm (adjustment needed) is dropped thereon. After the str... | 03/06/2007 |
| 7175708 | Recovering purified water and potassium chloride from spent basic hydrogen peroxide Methods and apparatus are provided for the removal and purification of the water and salt by-products from spent BHP emitted from a lasing process. The apparatus comprises a liquid processing system that freezes the water and salt by-products into a slurry, and then... | 02/13/2007 |
| 7153361 | Production method of opto-electronic device array An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are transferred to a first substrate to be arranged in an array substantially. Acti... | 12/26/2006 |
| 7135073 | Method and system for semiconductor crystal production with temperature management What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent ele... | 11/14/2006 |
| 7135071 | Fractal structure and method of forming it A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth conditions providing a first fractal dimension in a first portion of ... | 11/14/2006 |
| 7128974 | Thick single crystal diamond layer method for making it and gemstones produced from the layer This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a... | 10/31/2006 |
| 7130048 | Method and apparatus for forming substrate for semiconductor or the like In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e... | 10/31/2006 |
| 7122846 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 10/17/2006 |
| 7101434 | Fractal structure and its forming method A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. Especially in a stellar fractal structure, a region with a low fractal dimension is formed around a core with a high fractal dimension. By... | 09/05/2006 |
| 7102153 | Strained silicon forming method with reduction of threading dislocation density A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for... | 09/05/2006 |
| 7087114 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 08/08/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7074270 | Method for predicting the behavior of dopant and defect components Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material ... | 07/11/2006 |
| 7072743 | Semiconductor manufacturing gas flow divider system and method A system for dividing a single flow into two or more secondary flows of desired ratios, including an inlet adapted to receive the single flow, at least two secondary flow lines connected to the inlet, an input device adapted to receive at least one desired ratio of ... | 07/04/2006 |
| 7056381 | Fabrication method of semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorp... | 06/06/2006 |
| 7032886 | Carpet removal system A carpet removal system for efficiently removing carpeting. The carpet removal system includes a winch, a base member with a plurality of base teeth attached to the base member, an engaging member with a plurality of engaging teeth, and a cable extending from the wi... | 04/25/2006 |
| 7026009 | Evaluation of chamber components having textured coatings A component for a substrate processing chamber comprises a structure having a textured coating with surface grains. The component is evaluated by directing a beam of electrons onto the textured coating of the component to cause at least some of the electrons to be b... | 04/11/2006 |
| 7018467 | Three-dimensional complete bandgap photonic crystal formed by crystal modification A method of forming a three-dimensional (3D) complete photonic bandgap crystal by crystal modification is disclosed. The 3D crystal includes a first periodic array of unit cells formed from first voids connected by imaginary bonds. The first periodic array forms an ... | 03/28/2006 |
| 7001459 | Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fl... | 02/21/2006 |
| 6994750 | Film evaluating method, temperature measuring method, and semiconductor device manufacturing method Reference infrared-absorption spectrum patterns are prepared in advance as a database. The infrared-absorption spectrum pattern of a film targeted for measurement is measured using FT-IR spectroscopy. Subsequently, multivariate analysis is performed using PLS regres... | 02/07/2006 |
| 6971432 | Sample processing system This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatu... | 12/06/2005 |
| 6970532 | Method and apparatus for measuring thin film, and thin film deposition system The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin f... | 11/29/2005 |
