Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
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| Number | Title | Issue Date |
| 8128749 | Fabrication of SOI with gettering layer An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI subst... | 03/06/2012 |
| 8080106 | Epitaxial silicon wafer and production method thereof Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof. An epitaxial sili... | 12/20/2011 |
| 8038793 | Epitaxial growth method The invention provides an epitaxial growth method which is a single wafer processing epitaxial growth method by which at least a single crystal substrate is placed in a reaction chamber with an upper wall having a downward convexity and an epitaxial layer is deposit... | 10/18/2011 |
| 8016943 | Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains... | 09/13/2011 |
| 8002892 | Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The ... | 08/23/2011 |
| 7959731 | Method for producing semiconductor wafer A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0 | 06/14/2011 |
| 7922813 | Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers Epitaxially coated silicon wafers, are produced by epitaxially coating a multiplicity of wafers polished at least on their front sides, successively and individually in an epitaxy reactor, by placing a silicon wafer on a susceptor, pretreating under a hydrogen atmos... | 04/12/2011 |
| 7918937 | Method of producing silicon carbide epitaxial layer A method of producing an epitaxial layer on a substrate of silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a thickness uniformity that is better than 5% at a growth rate which is at least 100 μm/hour. The method comprises provid... | 04/05/2011 |
| 7914619 | Thick epitaxial silicon by grain reorientation annealing and applications thereof The invention provides a high temperature (about 1150° C. or greater) annealing process for converting thick polycrystalline Si layers on the order of 1 μm to 40 μm on a single crystal seed layer into thick single crystal Si layers having the orientation of the s... | 03/29/2011 |
| 7887634 | Method of producing a semiconductor element and semiconductor element In a method of producing a semiconductor element in a substrate, a plurality of carbide precipitates is formed in the substrate, doping atoms are implanted into the substrate, thereby forming crystal defects in the substrate, the substrate is heated, such that at le... | 02/15/2011 |
| 7871469 | Method for fabricating waveguides A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the heigh... | 01/18/2011 |
| 7867335 | GaN bulk growth by Ga vapor transport GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N2, and the powder source is GaN powder that is loa... | 01/11/2011 |
| 7854804 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface o... | 12/21/2010 |
| 7811382 | Method for forming a semiconductor structure having a strained silicon layer A wafer having a silicon layer that is strained is used to form transistors. The silicon layer is formed by first forming a silicon germanium (SiGe) layer of at least 30 percent germanium that has relaxed strain on a donor wafer. A thin silicon layer is epitaxially ... | 10/12/2010 |
| 7799132 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 09/21/2010 |
| 7794541 | Gallium nitride-based material and method of manufacturing the same Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G... | 09/14/2010 |
| 7794540 | Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device, in which on a region of silicon oxide (5) situated next to a region of monocrystalline silicon (4) at the surface (3) of a semiconductor body (1), a non-monocrystalline auxiliary layer (8... | 09/14/2010 |
| 7785414 | Process for manufacturing wafer of silicon carbide single crystal A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an α (hexagonal)-silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001]c ax... | 08/31/2010 |
| 7785415 | Localized synthesis and self-assembly of nanostructures Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, ... | 08/31/2010 |
| 7771532 | Nitride semiconductor substrate and method of producing same A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, f... | 08/10/2010 |
| 7727331 | Crystal firm, crystal substrate, and semiconductor device A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12 | 06/01/2010 |
| 7704323 | Metal-free silicon-molecule-nanotube testbed and memory device Work from several laboratories has shown that metal nanofilaments cause problems in some molecular electronics testbeds. A new testbed for exploring the electrical properties of single molecules has been developed to eliminate the possibility of metal nanofilament f... | 04/27/2010 |
| 7691201 | Method of forming three-dimensional nanocrystal array A method of forming an assembly of isolated nanowires of at least one material within a matrix of another material is provided. The method comprises: providing a substrate; forming a catalyst array on a major surface of the substrate; growing an array of the nanowir... | 04/06/2010 |
| 7621999 | Method and apparatus for AlGan vapor phase growth An epitaxial growing method in which a crystal of AlxGa1-xN wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process. Crystal of AlxGa1-xN is grown acco... | 11/24/2009 |
| 7621998 | Single crystalline gallium nitride thick film having reduced bending deformation The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the direction per surface distance of 0.002... | 11/24/2009 |
| 7615116 | Method for producing silicon epitaxial wafer and silicon epitaxial wafer In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted. ... | 11/10/2009 |
| 7611579 | Systems and methods for synthesis of extended length nanostructures A system for synthesizing nanostructures using chemical vapor deposition (CVD) is provided. The system includes a housing, a porous substrate within the housing, and on a downstream surface of the substrate, a plurality of catalyst particles from which nanostructure... | 11/03/2009 |
| 7597757 | ZnO film with C-axis orientation A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al2O3 film overlying the substrate; and, forming a ZnO film overlying the Al2O | 10/06/2009 |
| 7566364 | Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the fir... | 07/28/2009 |
| 7563321 | Process for producing high quality large size silicon carbide crystals The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating ... | 07/21/2009 |
| 7501022 | Methods of fabricating silicon carbide crystals Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed... | 03/10/2009 |
| 7494545 | Epitaxial deposition process and apparatus An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced in... | 02/24/2009 |
| 7488386 | Atomic layer deposition methods and chemical vapor deposition methods The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbe... | 02/10/2009 |
| 7488385 | Method for epitaxial growth of a gallium nitride film separated from its substrate The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at leas... | 02/10/2009 |
| 7473315 | AlInGaN mixture crystal substrate, method of growing AlInGaN mixture crystal substrate and method of producing AlInGaN mixture crystal substrate A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an AlxInyGa1-x-y | 01/06/2009 |
| 7459024 | Method of forming an N-type doped single crystal diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes o... | 12/02/2008 |
| 7455729 | Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. ... | 11/25/2008 |
| 7449065 | Method for the growth of large low-defect single crystals A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is ... | 11/11/2008 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and ma... | 10/28/2008 |
| 7438761 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride ... | 10/21/2008 |
