Bizarre Patents
A banana protective device for storing and transporting a banana carefully.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8052794 | Directed reagents to improve material uniformity A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive... | 11/08/2011 |
| 7955433 | Method and system for forming a silicon ingot using a low-grade silicon feedstock Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot... | 06/07/2011 |
| 7442355 | Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lowe... | 10/28/2008 |
| 7410540 | Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification... | 08/12/2008 |
| 7407547 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 08/05/2008 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7381266 | Sapphire crystal growth method A sapphire crystal growth method includes a first step of grinding, a second step of purification, a third step of spraying and drying particles, a fourth step of adding organic bonding agent, a fifth step of press molding, and a sixth step of crystal growth. Thus, ... | 06/03/2008 |
| 7368015 | Apparatus for producing single crystal and quasi-single crystal, and associated method An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees... | 05/06/2008 |
| 7364619 | Process for obtaining of bulk monocrystalline gallium-containing nitride The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, ... | 04/29/2008 |
| 7364620 | Method of purifying alkaline-earth and alkali-earth halides for crystal growth An improved technique that reduces the potential for trapped impurities and/or ensuring desired stoichiometry of a grown crystal. Improved contaminant removal is obtained by bubbling a scavenger gas, such as fluorine gas or hydrogen fluoride gas, through a melt of a... | 04/29/2008 |
| 7344598 | Rotationally-vibrated unidirectional solidification crystal growth system and its method A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isol... | 03/18/2008 |
| 7344595 | Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a vari... | 03/18/2008 |
| 7341872 | Multiautoclave with set of vessels for combinatorial synthesis of zeolites and other materials A vessel arrangement having a base and multiple vessels suited for simultaneously conducting a plurality of isolated experimental reactions or treatments at atmospheric process conditions or elevated temperatures and pressure condition has been developed. A componen... | 03/11/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7314518 | Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter se... | 01/01/2008 |
| 7314517 | Process for obtaining bulk mono-crystalline gallium-containing nitride An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0≦× | 01/01/2008 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7288152 | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere ... | 10/30/2007 |
| 7279040 | Method and apparatus for zinc oxide single crystal boule growth There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more ... | 10/09/2007 |
| 7276219 | Preparation of 157nm transmitting barium fluoride crystals with permeable graphite The present invention is directed to a method of making large diameter metal fluoride sungle crystals that can be used in optical lithograpby systems, for example, excimer laser that operate below 200 nm. In addition, the invention is directed to metal fluoride sing... | 10/02/2007 |
| 7261774 | Crystal-growing furnace, in particular a vertical Bridgman crystal-growing furnace or a vertical gradient freeze crystal-growing furnace having a jacket heater and a method of regulating the heat output of the jacket heater This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or v... | 08/28/2007 |
| 7261775 | Methods of growing a group III nitride crystal A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the ... | 08/28/2007 |
| RE39778 | Method of preparing group III-V compound semiconductor crystal A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easi... | 08/21/2007 |
| 7255740 | Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at a temperature under the melting point of the crystal raw material is... | 08/14/2007 |
| 7214269 | Si-doped GaAs single crystal substrate A Si-doped gallium arsenide single crystal substrate has a carrier concentration of 0.1×1018 to 5.0×1018/cm3. The substrate is made by Vertical Bridgeman (VB) method or Vertical Gradient Freeze (VGF) method, and a minimum value and... | 05/08/2007 |
| 7211146 | Powder metallurgy crucible for aluminum nitride crystal growth A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.... | 05/01/2007 |
| 7211142 | CdTe single crystal and CdTe polycrystal, and method for preparation thereof A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing meth... | 05/01/2007 |
| 7198673 | Optical lithography fluoride crystal annealing furnace A method of making below 250-nm UV light transmitting optical fluoride lithography crystals includes applying heat along a shortest path of conduction of a selected optical fluoride crystal, heating the optical fluoride crystal to an annealing temperature, holding t... | 04/03/2007 |
| 7175707 | P-type GaAs single crystal and its production method A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed cry... | 02/13/2007 |
| 7175705 | Process for producing compound semiconductor single crystal A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting ... | 02/13/2007 |
| 7175706 | Process of producing multicrystalline silicon substrate and solar cell There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surf... | 02/13/2007 |
| 7166163 | Optical member, method of manufacturing the same, and projection exposure system A method of manufacturing an optical member includes a crystal growing step and a carving step. The crystal growing step includes melting a mixture of fluoride powder and a scavenger at a melting temperature of a melting point for the fluoride and above, and then cr... | 01/23/2007 |
| 7166162 | Terbium type paramagnetic garnet single crystal and magneto-optical device A terbium type paramagnetic garnet single crystal having a high Faraday effect and a high light transmission factor even in a visible range, as well as a high Verdet constant. A magneto-optical device containing the terbium type paramagnetic garnet single crystal. T... | 01/23/2007 |
| 7141114 | Process for producing a crystalline silicon ingot An improved process for producing a crystalline silicon ingot, a crystalline silicon wafer and a photovoltaic cell using the directional solidification process, and more particularly to loading and preparing a mold for the process of directional solidification. At l... | 11/28/2006 |
| 7125452 | Process for calibrating the temperature control unit of an oven and oven for carrying out this process A process for calibrating the temperature control unit of a vertical gradient freeze crystal growth oven, instead of the fused material a test body (3) is used in the oven (1) that does not melt at the oven temperature, that has a heat conductivity com... | 10/24/2006 |
| 7097707 | GaN boule grown from liquid melt using GaN seed wafers A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby... | 08/29/2006 |
| 7083678 | Method and apparatus for making a crystal pre-melt An apparatus for making a crystal pre-melt includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within the muffle furnace, a temperature-controlled zone defined inside the m... | 08/01/2006 |
| 7048799 | Device for producing alloy crystals by cooling and controlled solidification of a liquid material The device according to the present invention comprises a furnace (10) provided with heating means allowing said material to be crystallised to be rendered liquid, then to be cooled until it progressively solidifies. The device also comprises reception means ... | 05/23/2006 |
| 7033433 | Crystal growth methods The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow... | 04/25/2006 |
