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| Number | Title | Issue Date |
| 8157914 | Substrate surface modifications for compositional gradation of crystalline materials and associated products A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by preparing a crystalline substrate by forming crystallographically or... | 04/17/2012 |
| 8118933 | Method of manufacturing a silicon carbide single crystal Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradien... | 02/21/2012 |
| 8101020 | Crystal growth apparatus and manufacturing method of group III nitride crystal A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heat... | 01/24/2012 |
| 7998272 | Method of fabricating multi-freestanding GaN wafer A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN... | 08/16/2011 |
| 7918936 | System and method for crystal growing To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucib... | 04/05/2011 |
| 7905958 | Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolv... | 03/15/2011 |
| 7828896 | Methods of growing a group III nitride crystal A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the ... | 11/09/2010 |
| 7776153 | Method and apparatus for producing large, single-crystals of aluminum nitride A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The a... | 08/17/2010 |
| 7754011 | Method of manufacturing a calcium fluoride single crystal A method of manufacturing calcium fluoride single crystal includes cooling the calcium fluoride single crystal with variable cooling rates so that throughout a temperature range in the cooling step, maximum shear stress inside the calcium fluoride single crystal cau... | 07/13/2010 |
| 7641735 | Doped aluminum nitride crystals and methods of making them Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. ... | 01/05/2010 |
| 7597756 | Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucib... | 10/06/2009 |
| 7588637 | Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystallin... | 09/15/2009 |
| 7459023 | Method for producing semiconductor crystal The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be gr... | 12/02/2008 |
| 7449064 | Method for producing AlN single crystal and AlN single crystal An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature in a ra... | 11/11/2008 |
| 7449063 | Method and mould for casting articles with a pre-determined crystalline orientation Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crysta... | 11/11/2008 |
| 7442355 | Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lowe... | 10/28/2008 |
| 7410540 | Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification... | 08/12/2008 |
| 7407547 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 08/05/2008 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7381266 | Sapphire crystal growth method A sapphire crystal growth method includes a first step of grinding, a second step of purification, a third step of spraying and drying particles, a fourth step of adding organic bonding agent, a fifth step of press molding, and a sixth step of crystal growth. Thus, ... | 06/03/2008 |
| 7378042 | Nonlinear optical crystal optimized for Ytterbium laser host wavelengths A material for harmonic generation has been made by substitutional changes to the crystal LaCa4 (BO3)3 also known as LaCOB in the form Re1xRe2yRe3zCa4(B03)3O where Re1... | 05/27/2008 |
| 7368015 | Apparatus for producing single crystal and quasi-single crystal, and associated method An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees... | 05/06/2008 |
| 7364619 | Process for obtaining of bulk monocrystalline gallium-containing nitride The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, ... | 04/29/2008 |
| 7364620 | Method of purifying alkaline-earth and alkali-earth halides for crystal growth An improved technique that reduces the potential for trapped impurities and/or ensuring desired stoichiometry of a grown crystal. Improved contaminant removal is obtained by bubbling a scavenger gas, such as fluorine gas or hydrogen fluoride gas, through a melt of a... | 04/29/2008 |
| 7358284 | Particulate acellular tissue matrix A method of processing an acellular tissue matrix to give a particulate acellular tissue matrix includes: cutting sheets of dry acellular tissue matrix into strips; cryofracturing the dry acellular tissue matrix strips at cryogenic temperatures; separating the resul... | 04/15/2008 |
| 7344595 | Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a vari... | 03/18/2008 |
| 7314517 | Process for obtaining bulk mono-crystalline gallium-containing nitride An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0≦× | 01/01/2008 |
| 7314518 | Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter se... | 01/01/2008 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7294199 | Nitride single crystal and producing method thereof A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport ... | 11/13/2007 |
| 7288152 | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere ... | 10/30/2007 |
| 7279040 | Method and apparatus for zinc oxide single crystal boule growth There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more ... | 10/09/2007 |
| 7276219 | Preparation of 157nm transmitting barium fluoride crystals with permeable graphite The present invention is directed to a method of making large diameter metal fluoride sungle crystals that can be used in optical lithograpby systems, for example, excimer laser that operate below 200 nm. In addition, the invention is directed to metal fluoride sing... | 10/02/2007 |
| 7261775 | Methods of growing a group III nitride crystal A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the ... | 08/28/2007 |
| 7261774 | Crystal-growing furnace, in particular a vertical Bridgman crystal-growing furnace or a vertical gradient freeze crystal-growing furnace having a jacket heater and a method of regulating the heat output of the jacket heater This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or v... | 08/28/2007 |
| 7260124 | Nonlinear optical crystal optimized for ytterbium laser host wavelengths A material for harmonic generation has been made by substitutional changes to the crystal LaCa4(BO3)3 also known as LaCOB in the form Re1xRe2yRe3zCa4(B03)3O where Re1 ... | 08/21/2007 |
| 7255742 | Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a se... | 08/14/2007 |
| 7255923 | Surface modified nanoparticle and method of preparing same The present disclosure relates to a nanoparticle containing at least one metal sulfide nanocrystal having a surface modified with a carboxylic acid, wherein the carboxylic acid has at least one aryl group. The present disclosure also describes a method of preparing ... | 08/14/2007 |
| 7243578 | Skateboard tool A multifunction tool according to the present disclosure is formed in a generally “Y” shape to provide leverage and control when the tools included in the first arm or the second arm are employed. The main stem includes a ratchet assembly for a male drive elemen... | 07/17/2007 |
