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| Number | Title | Issue Date |
| 8101018 | Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor In a method for fabricating a semiconductor device and an apparatus for inspecting a semiconductor, laser processing is performed at different laser powers at different positions on a monitor substrate from a plurality of substrates having undergone an SPC step, to ... | 01/24/2012 |
| 8016940 | Processing method for organic crystal, processing device for organic crystal, and observing device for organic crystal The short-pulse laser light 9 emitted from the short-pulse laser light source 1 is focused on and caused to irradiate an organic crystal 8 contained in a sample container 6 via a shutter 2, intensity adjusting element 3, irr... | 09/13/2011 |
| 7635412 | Crystallizing silicon using a laser beam transmitted through a mask An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without rotation of a stage, wherein the laser crystallization device is includes... | 12/22/2009 |
| 7608144 | Pulse sequencing lateral growth method A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the subst... | 10/27/2009 |
| 7438759 | Ambient environment nanowire sensor An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips o... | 10/21/2008 |
| 7422630 | Fabrication method of semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorp... | 09/09/2008 |
| 7413604 | Process for producing polysilicon film The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grai... | 08/19/2008 |
| 7396712 | Thin film processing method and thin processing apparatus A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is car... | 07/08/2008 |
| 7390728 | Display device and manufacturing method thereof The present invention is to reduce display unevenness in a display device caused by dispersion of energy density of a laser beam. It is difficult for a periodical pattern to be recognized as display unevenness in display image. The display device of the present inve... | 06/24/2008 |
| 7384476 | Method for crystallizing silicon A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the ... | 06/10/2008 |
| 7365410 | Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous... | 04/29/2008 |
| 7364955 | Methods of manufacturing semiconductor devices having single crystalline silicon layers Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed... | 04/29/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7354810 | Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is m... | 04/08/2008 |
| 7354858 | Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting ... | 04/08/2008 |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... | 03/25/2008 |
| 7335261 | Apparatus for forming a semiconductor thin film Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an ... | 02/26/2008 |
| 7335540 | Low temperature polysilicon thin film transistor and method of manufacturing the same A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the pe... | 02/26/2008 |
| 7335255 | Manufacturing method of semiconductor device The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film i... | 02/26/2008 |
| 7332417 | Semiconductor structures with structural homogeneity Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. ... | 02/19/2008 |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7318866 | Systems and methods for inducing crystallization of thin films using multiple optical paths The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. Exemplary methods include the ... | 01/15/2008 |
| 7311771 | Method and apparatus for forming crystalline portions of semiconductor film A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous li... | 12/25/2007 |
| 7309476 | Diamondoid-based components in nanoscale construction Novel diamondoid-based components that may be used in nanoscale construction are disclosed. Such components include rods, brackets, screws, gears, rotors, and impellers. Subassemblies (or subsystems) may comprise one or more diamondoid components. Exemplary subassem... | 12/18/2007 |
| 7303980 | Laser annealing method and apparatus A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 where assumi... | 12/04/2007 |
| 7294539 | Semiconductor substrate, semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes: forming an insulating layer on a single crystal semiconductor substrate; forming a non-crystalline semiconductor layer on the insulating layer; forming an insulating film on the non-crystalline semiconducto... | 11/13/2007 |
| 7294589 | Laser irradiation apparatus An object is to obtain an even energy distribution of a laser beam in one direction, thereby conducting a uniform laser annealing on a film. A laser irradiation apparatus comprising: a lens for dividing a laser beam in one direction; and an optical system for... | 11/13/2007 |
| 7288830 | III-V nitride semiconductor substrate and its production method A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while f... | 10/30/2007 |
| 7282738 | Fabrication of crystalline materials over substrates A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline mater... | 10/16/2007 |
| 7279373 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 10/09/2007 |
| 7271042 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 09/18/2007 |
| 7271082 | Method of manufacturing a semiconductor device A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifical... | 09/18/2007 |
| 7268043 | Semiconductor device and method of manufacturing the same A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gat... | 09/11/2007 |
| 7250386 | Quantum limit catalysts and hydrogen storage materials A quantum limit catalyst. The instant quantum limit catalyst is comprised of atomic aggregations whose dimensions correspond to the quantum limit. In the quantum limit, the atomic aggregations acquire structural configurations and electronic interactions not attaina... | 07/31/2007 |
| 7229861 | Method for producing semiconductor device In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystal... | 06/12/2007 |
| 7220627 | Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradi... | 05/22/2007 |
| 7217319 | Crystallization apparatus and crystallization method A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity di... | 05/15/2007 |
| 7214574 | Heating treatment device, heating treatment method and fabrication method of semiconductor device To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is ... | 05/08/2007 |
| 7214573 | Method of manufacturing a semiconductor device that includes patterning sub-islands A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The su... | 05/08/2007 |
