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3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
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| Number | Title | Issue Date |
| 7422633 | Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of... | 09/09/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7306673 | Furnace purification and metal fluoride crystal grown in a purified furnace The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000°... | 12/11/2007 |
| 7294199 | Nitride single crystal and producing method thereof A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport ... | 11/13/2007 |
| 7288151 | Method of manufacturing group-III nitride crystal There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a met... | 10/30/2007 |
| 7288152 | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere ... | 10/30/2007 |
| 7267721 | Method for preparing group IV nanocrystals with chemically accessible surfaces Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced in organic solvents such as 1,2-dimethoxyethane (glyme), with soluabl... | 09/11/2007 |
| 7261775 | Methods of growing a group III nitride crystal A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the ... | 08/28/2007 |
| 7214359 | Cubic boron nitride, catalyst for synthesizing cubic boron nitride, and method for producing cubic boron nitride By using a CBN synthesis catalyst containing a CBN synthesis catalyst component coated with an organic substance for producing cubic boron nitride (CBN), the CBN can be produced at a high transformation ration and a high yield ratio. Each of the CBN grains produced ... | 05/08/2007 |
| 7179731 | Hypercontacting The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region ... | 02/20/2007 |
| 7179329 | Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor ... | 02/20/2007 |
| 7160388 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 01/09/2007 |
| 7149236 | Optoelectronic semiconductor device Optoelectronic devices, such as optical transmitters and optical amplifiers, are provided. The optoelectronic devices are suitable for use in connection with optical communications systems, and related components and devices, such as may be used in the transmission,... | 12/12/2006 |
| 7144765 | Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel l... | 12/05/2006 |
| 7094441 | Low temperature interconnection of nanoparticles A polymeric linking agent enables the manufacture of photovoltaic cells on flexible substrates, including, for example, polymeric substrates. Photovoltaic cells may be fabricated by a relatively simple continuous manufacturing process, for example, a roll-to-roll pr... | 08/22/2006 |
| 7093211 | Techniques for modeling current spreading uniformity in light emitting diodes Techniques for automatically generating three dimensional geometric circuit models from a computer aided design (CAD) of a light emitting diode (LED) device. The models may comprise a robust netlist that may be executed using circuit simulation packages. The spatial... | 08/15/2006 |
| 7083678 | Method and apparatus for making a crystal pre-melt An apparatus for making a crystal pre-melt includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within the muffle furnace, a temperature-controlled zone defined inside the m... | 08/01/2006 |
| 7063741 | High pressure high temperature growth of crystalline group III metal nitrides A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and galliu... | 06/20/2006 |
| 7001457 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared... | 02/21/2006 |
| 6984265 | Three dimensional array films The present invention provides nanoparticle film and methods of making such films. The nanoparticle film comprises a three dimensional cross-linked array of nanoparticles and linker molecules. The nanoparticle film is coherent, robust and self supporting. The film m... | 01/10/2006 |
| 6929694 | Crystal manufacture method A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melt... | 08/16/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
| 6673647 | Method for growing a solid type II-VI semiconductor material A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with proportions of the components being such that the first co... | 01/06/2004 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued whil... | 07/15/2003 |
| 6488769 | Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same In order to provide a fluoride refining method and a fluoride crystal manufacturing method that have great general-purpose properties and can reduce the manufacturing cost and to provide at a low cost a fluoride crystal, an optical part and an aligner the... | 12/03/2002 |
| 6488770 | Monocrystalline powder and monograin membrane production For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of copper indium diselenide which are generally used in a sto... | 12/03/2002 |
| 6270569 | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitri... | 08/07/2001 |
| 6238479 | Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part The present invention provides a raw material for manufacturing an inexpensive fluoride crystal with excellent optical characteristics, and a method of manufacturing a fluoride crystal using a carbon fluoride-based gas that can easily be handled and is ca... | 05/29/2001 |
| 6203612 | Process for cleaning bisphenol crystallizer An alternative and improved method for cleaning cooling and/or crystallization surfaces of a crystallizer fouled with a crystallized bisphenol as a result of processing a slurry derived from the production of bisphenol is provided. The method includes the... | 03/20/2001 |
| 6153125 | BaM2 O4 oxide single crystal having non-linear optical property and manufacturing method thereof An oxide single crystal having a nominal composition expressed BaM2 O4 (M is at least an element selected from the group consisting of Al and Ga), M of which is partially substituted with B, is provided. The BaM2 O4 | 11/28/2000 |
| 6123764 | Manufacturing method for calcium fluoride crystal and processing method for calcium fluoride powder A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder particles, preprocessing the degassed calcium fluoride powd... | 09/26/2000 |
| 6096128 | Silicon crystal, and device and method for manufacturing same A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer ... | 08/01/2000 |
| 5962374 | Preparation of oxide crystals A process for preparing an oxide crystal by means of solution growth in the presence of a solvent is provided. The solvent includes a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal, a halide contain... | 10/05/1999 |
| 5846319 | Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperat... | 12/08/1998 |
| 5788945 | Method for refining of silicon The present invention relates to a process for removing impurities from molten silicon by treatment of molten silicon contained in a vessel with a slag having the capability of removing the impurities, particularly boron from molten silicon wherein slag i... | 08/04/1998 |
| 5707879 | Neutron detector based on semiconductor materials A neutron radiation detector is described. A semiconductor material is populated with helium three (3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a 3 He atom, a tritium ion and a proton ... | 01/13/1998 |
| 5571776 | Single crystalline bulk oxide superconductor and process for producing same Enlargement of a crystal of a bulk oxide superconductor of REBa2 Cu3 O7-x, wherein RE is at least one of Y and rare earth elements, is effected by three dimensionally arranging layers of REBa2 Cu3 O | 11/05/1996 |
| 5562768 | Potassium-lithium niobate crystals The invention provides a method of manufacturing stoichiometric potassium-lithium niobate crystals. Such crystals exhibit a high degree of double refraction and can suitably be used to double the frequency of a light wave with noncritical phase matching. ... | 10/08/1996 |
| 5544615 | Synthesis and growth processes for zinc germanium diphosphide single crystals New single crystals of ZnGeP2 are grown by a chemical vapor transport process from bulk synthesized polycrystalline ZnGeP2 using the LEK process with a controlled injection of phosphorus. The synthesis of the bulk is based on direct ... | 08/13/1996 |
