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| Number | Title | Issue Date |
| 7981215 | Electrospun single crystal MoOnanowires for bio-chem sensing probes Single crystal MoO3 nanowires were produced using an electrospinning technique. High resolution transmission electron microscopy (HRTEM) revealed that the 1-D nanostructures are from 10-20 nm in diameter, on the order of 1-2 μm in length, and ... | 07/19/2011 |
| 7435296 | Diamond bodies grown on SiC substrates and associated methods The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide ... | 10/14/2008 |
| 7410539 | Template type substrate and a method of preparing the same The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy g... | 08/12/2008 |
| 7396408 | Monocrystalline diamond layer and method for the production thereof This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buff... | 07/08/2008 |
| 7374817 | Topological crystal of transition metal chalcogenide and method of forming the same Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition... | 05/20/2008 |
| 7365358 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grai... | 04/29/2008 |
| 7303723 | Method of forming nanostructures on ceramics A method for manufacturing oriented arrays of ceramic or metal oxide nanostructures, such as titania (TiO2) nanofibers. The nanofibers are formed on the surface of a body that is first sintered at a temperature in the range of about 1,100 to about 1,400 d... | 12/04/2007 |
| 7294197 | Formation of a silicon sheet by cold surface casting Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface... | 11/13/2007 |
| 7288150 | Homogeneous incorporation of activator element in a storage phosphor A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or activator is incorporated more homogeneously in amorphous and in crystalline... | 10/30/2007 |
| 7267721 | Method for preparing group IV nanocrystals with chemically accessible surfaces Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced in organic solvents such as 1,2-dimethoxyethane (glyme), with soluabl... | 09/11/2007 |
| 7264675 | Diamond manufacturing method In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A crystallization seed is drawn from the melt to generate a piece of diamon... | 09/04/2007 |
| 7229497 | Method of preparing nanocrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a continuous flow method. ... | 06/12/2007 |
| 7220311 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixtu... | 05/22/2007 |
| 7132015 | Materials for dental and biomedical application The invention provides novel dental enamel inspired materials for biomedical and dental applications. The materials are apatite-like calcium phosphate complexes and may comprise apatite, octacalcium phosphate crystals, or mixtures thereof. In one embodiment, the mat... | 11/07/2006 |
| 7118627 | Synthesis of colloidal PbS nanocrystals with size tunable NIR emission The present invention discloses a method for synthesis of narrowly dipsersed colloidal PbS nanocrystals that offer size-tunable near-infrared emission. The stability and processibility of these near-infrared emitting quantum dots makes them ideal materials for devic... | 10/10/2006 |
| 7115165 | Single crystal of nitride containing metal element of group III or IV and method for preparing the same β-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in depth) of a reaction vessel 2, which is then enclosed... | 10/03/2006 |
| 7105053 | Energy efficient method for growing polycrystalline silicon Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surround... | 09/12/2006 |
| 7081162 | Method of manufacturing bulk single crystal of gallium nitride The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ion or ions of alkali metals in an autoclave; and dissolving a m... | 07/25/2006 |
| 7070754 | Ropes of single-wall carbon nanotubes This invention provides a method of making single-wall carbon nanotubes by laser vaporizing a mixture of carbon and one or more Group VIII transition metals. Single-wall carbon nanotubes preferentially form in the vapor and the one or more Group VIII transition meta... | 07/04/2006 |
| 7060130 | Heteroepitaxial diamond and diamond nuclei precursors A process for growing by chemical vapor deposition a heteroepitaxial single crystal diamond is disclosed. The process provides a substrate which enables the growth of single crystal diamond which is vapor coated on an iridium film. An intermediate process for produc... | 06/13/2006 |
| 7037370 | Free-standing diamond structures and methods The present invention is directed in one aspect to methods of making free-standing, internally-supported, three-dimensional objects having an outer surface comprising a plurality of intersecting facets wherein a sub-set of the intersecting facets have a diamond laye... | 05/02/2006 |
| 7018549 | Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment ... | 03/28/2006 |
| 6969504 | Electrical conductors comprising single-wall carbon nanotubes The present invention concerns electrical conductors comprising armchair single-wall carbon nanotubes. Such electrical conductors made by the invention are metallic, i.e., they will conduct electrical charges with a relatively low resistance. The amount of armchair ... | 11/29/2005 |
| 6965387 | Real time data conversion for a digital display A system and method for extracting and manipulating image data is provided. A pixel panel is rotated so as to increase a resolution of a projected image. The rotation may be calculated so as to achieve a desired resolution. A portion of the image is retrieved from a... | 11/15/2005 |
| 6872251 | Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powde... | 03/29/2005 |
| 6821337 | Preparation of nanocrystallites A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconductin... | 11/23/2004 |
| 6607593 | Method of manufacturing a mono-crystalline silicon ball When a crystalline nucleus generated from an under-cooled silicon droplet is grown up to a mono-crystalline silicon ball, a critical under-cooling ƊTcr is determined in response to a diameter d of the silicon droplet so as to satisfy the relat... | 08/19/2003 |
| 6596078 | Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source materi... | 07/22/2003 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued whil... | 07/15/2003 |
| 6497762 | Method of fabricating crystal thin plate under micro-gravity environment A method of fabricating a crystal thin plate of a substance capable of forming a crystal, wherein a molten layer of the substance formed on a support is cooled in the atmosphere of an inert gas or in vacuum at a rate of 10-300° C. per second under a micr... | 12/24/2002 |
| 6488770 | Monocrystalline powder and monograin membrane production For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of copper indium diselenide which are generally used in a sto... | 12/03/2002 |
| 6440213 | Process for making surfactant capped nanocrystals Disclosed is a process for making surfactant capped nanocrystals of transition metal oxides. The process comprises reacting a metal cupferron complex of the formula M Cup, wherein M is a transition metal, and Cup is a cupferron, with a coordinating surfac... | 08/27/2002 |
| 6338755 | Method for producing a single crystalline member An amorphous film 2 is formed on a single crystalline substrate 1. Then, the amorphous film is selectively removed by photolithography to form windows 3. Subsequently, the windows 3 are contacted with a supersaturated solution 5 dissolving a given element... | 01/15/2002 |
| 6270569 | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitri... | 08/07/2001 |
| 6241819 | Method of manufacturing quantum sized doped semiconductor particles Doped semiconductor nanoparticles of a size ( | 06/05/2001 |
| 6139626 | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals A method for patterning materials according to a predetermined, three-dimensional pattern, as well as patterned materials produced by said methods, are provided. A template is prepared comprising a template material, the template having a plurality of por... | 10/31/2000 |
| 6110275 | Manufacture of titanium carbide, nitride and carbonitride whiskers There is disclosed a method of producing, in large volume and at low cost, titanium carbide, nitride and carbonitride whiskers, with preferably submicron diameters, to be used as reinforcing material. The whiskers are suitable for use as a reinforcement m... | 08/29/2000 |
| 6106614 | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an underco... | 08/22/2000 |
| 5853477 | Manufacture of transition metal carbide, nitride and carbonitride whiskers There is disclosed a method of producing, in large volumes and at low cost, Ta, Nb, Zr and Hf carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing properties, suitable as reinforcement in a wide range of materials,... | 12/29/1998 |
| 5851285 | Manufacture of transition metal carbide, nitride, and carbonitride whiskers containing two or more transition metals There is disclosed a method of producing whiskers in large volumes and at low cost to be used as reinforcing material. The whiskers are solid solutions between two or more transition metal carbides, nitrides and carbonitrides, (Me1-X-Y.sub.Me' | 12/22/1998 |
