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| Number | Title | Issue Date |
| 7922812 | Method for growing single crystals of metals A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a select... | 04/12/2011 |
| 7422630 | Fabrication method of semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorp... | 09/09/2008 |
| 7374613 | Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature fro... | 05/20/2008 |
| 7361217 | Method for crystallising a melamine melt Method for crystallizing a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallization temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooli... | 04/22/2008 |
| 7347387 | Distributor for distributing a fluid to a number of fluid application nozzles A distributor which is mountable on a vehicle and is arranged for distributing a fluid from a reservoir to a number of nozzles through which the fluid is dispensed. The distributor includes housing, a first number of connections extending from the reservoir to the h... | 03/25/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7300516 | Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing c... | 11/27/2007 |
| 7294535 | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin fil... | 11/13/2007 |
| 7294357 | Plasma coated sutures Suture filaments coated by a plasma polymerization process exhibit a good balance of knot run down and knot security characteristics, superior tissue drag characteristics, and improved fray resistance. ... | 11/13/2007 |
| RE39778 | Method of preparing group III-V compound semiconductor crystal A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easi... | 08/21/2007 |
| 7250081 | Methods for repair of single crystal superalloys by laser welding and products thereof Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the las... | 07/31/2007 |
| 7232716 | Display device and method for manufacturing the same The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum va... | 06/19/2007 |
| 7229864 | Method of manufacturing a semiconductor device By using lasers having different wavelengths in laser annealing of an amorphous semiconductor film, the amorphous semiconductor film can be crystallized and the crystallinity of the crystallized film is improved. A laser 126 to 370 nm in wavelength is used first to ... | 06/12/2007 |
| 7223306 | Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an ... | 05/29/2007 |
| 7208401 | Method for forming a thin film Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described. ... | 04/24/2007 |
| 7208041 | Method for single crystal growth of perovskite oxides An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a pero... | 04/24/2007 |
| 7195798 | Method of manufacturing a low temperature polysilicon film A method of manufacturing a low temperature polysilicon film is provided. A first metal layer is formed on a substrate; and openings have been formed in the first metal layer. A second metal layer is formed on the first metal layer: and a hole corresponding to each ... | 03/27/2007 |
| 7192479 | Laser annealing mask and method for smoothing an annealed surface A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having ap... | 03/20/2007 |
| 7186570 | Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device A lower electrode is formed over a substrate, and a raw material including a complex oxide is heated in an atmosphere pressurized to two atmospheres or more and containing oxygen at a volume ratio of 10% or less at a temperature raising rate of 100° C./min or less,... | 03/06/2007 |
| 7176112 | Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed ... | 02/13/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 7147709 | Non-contact etch annealing of strained layers The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice con... | 12/12/2006 |
| 7141440 | Apparatus and method for measuring a property of a layer in a multilayered structure A property of a layer is measured by: (1) focusing a heating beam on a region (also called “heated region”) of a conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at ... | 11/28/2006 |
| 7132668 | MgZnO based UV detectors Photoconductive devices (1,2) comprising MgxZn1−xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV... | 11/07/2006 |
| 7120047 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 10/10/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7105048 | Laser irradiation apparatus Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is cryst... | 09/12/2006 |
| 7078275 | Semiconductor device and manufacturing method for same An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of th... | 07/18/2006 |
| 7067006 | OH and H resistant silicon material A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical tran... | 06/27/2006 |
| 7042432 | Thin-film transistor circuit and a semiconductor display using the same To provide thin-film transistor circuits used for a driving circuit that realizes a semiconductor display capable of producing an image with high resolution and high precision without image unevenness. TFTs with small channel widths are used to form an analog... | 05/09/2006 |
| 7021349 | Spin finish The present spin finish composition comprises at least about 10 percent by weight based on the spin finish composition of components (a) and (b) having the formula R1—(CO)x—O—(CH(R2)—CH2—O)y... | 04/04/2006 |
| 7001461 | Crystallization apparatus, crystallization method, and phase shifter A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmit... | 02/21/2006 |
| 6979590 | Methods of making electromechanical three-trace junction devices Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an up... | 12/27/2005 |
| 6971791 | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in... | 12/06/2005 |
| 6969425 | Methods for reducing the curvature in boron-doped silicon micromachined structures Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on th... | 11/29/2005 |
| 6963393 | Measurement of lateral diffusion of diffused layers Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (... | 11/08/2005 |
| 6958814 | Apparatus and method for measuring a property of a layer in a multilayered structure An apparatus measures a property of a layer (such as the sheet resistance of a conductive layer) by performing the following method: (1) focusing the heating beam on the heated a region (also called “heated region”) of the conductive layer (2) modulating the pow... | 10/25/2005 |
| 6951683 | Synthetic paper skins, paper and labels containing the same and methods of making the same This invention relates to polymer film useful as a skin layer for synthetic paper or label comprising (A) a filler (B) a carrier polymer and (C) a minor amount of an ink adhesion improving polymer. The film is printable by thermal transfer printing. The invention re... | 10/04/2005 |
| 6950277 | Concave trailing edge write pole for perpendicular recording A magnetic recording system includes a magnetic medium and a magnetic write head to write information on the magnetic medium. The magnetic write head includes a write pole having a downstream side that has a concave shaped portion when the write pole is viewed from ... | 09/27/2005 |
