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| Number | Title | Issue Date |
| 7833346 | Method and apparatus for manufacturing group III nitride crystals There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for format... | 11/16/2010 |
| 7435295 | Method for producing compound single crystal and production apparatus for use therein The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal i... | 10/14/2008 |
| 7335424 | Ionomer laminates and articles formed from ionomer laminates A co-extruded laminate of at least one layer of an ionomer and at least one layer of an acid polymer that can be thermoformed with a plastic substrate such as a polyolefin. The laminate can be pigmented to eliminate the need to paint the surface of the plastic subst... | 02/26/2008 |
| 7118625 | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is suppl... | 10/10/2006 |
| 6994890 | Cleaning and multifunctional coating composition containing an organosilane quaternary compound and hydrogen peroxide Cleaning and multifunctional coating compositions containing hydrogen peroxide and an organosilane quaternary compound in aqueous formulations are used to improve water and soil repellency and residual antimicrobial activity. Various surfaces may be treated includin... | 02/07/2006 |
| 6875270 | Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same The invention relates to a Bi-substituted rare earth-iron garnet single-crystal film and a method for producing it, and also to a Faraday rotator comprising it. Its object is to provide a magnetic garnet single-crystal film which hardly cracks while it grows or is c... | 04/05/2005 |
| 6869863 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step. ... | 03/22/2005 |
| 6743290 | Compositions comprising undecamantanes and processes for their separation Disclosed are compositions comprising one or more undecamantanes. Specifically disclosed are compositions comprising 25 to 100 weight percent of one or more undecamantanes. Also disclosed are novel processes for the separation and isolation of undecamantane componen... | 06/01/2004 |
| 6387780 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.... | 05/14/2002 |
| 6368401 | Method of producing magnetic garnet single crystal film and magnetic garnet single crystal film having a nonuniform thickness A method of producing a magnetic garnet single crystal film by a liquid phase epitaxial process, comprises the steps of: forming a platinum or platinum alloy film in any desired shape having any desired thickness on a nonmagnetic garnet single crystal sub... | 04/09/2002 |
| 5871579 | Two-step dipping technique for the preparation of organic-inorganic perovskite thin films A convenient two-step dipping technique for preparing high-quality thin films of a variety of perovskites is provided by the invention. Thin films of Mi2 (M=Pb, Sn) were first prepared by vacuum-depositing MI2 onto ash glass or quart... | 02/16/1999 |
| 5846319 | Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperat... | 12/08/1998 |
| 5650006 | Process for producing a lithium niobate-lithium tantalate single crystal substrate A film made of lithium niobate-lithium tantalate solid solution may be formed on a single crystal substrate having a composition of LiNb1-z Taz O3 (0ࣘz | 07/22/1997 |
| 5544616 | Crystallization from high temperature solutions of Si in Cu/Al solvent A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3×1016 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % ... | 08/13/1996 |
| 5517942 | Process for producing optoelectric articles A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state... | 05/21/1996 |
| 5468679 | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the w... | 11/21/1995 |
| 5314571 | Crystallization from high temperature solutions of Si in copper A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X1016 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a t... | 05/24/1994 |
| 5310447 | Single-crystal diamond of very high thermal conductivity Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It ... | 05/10/1994 |
| 5259915 | Organometallic compounds The invention relates to organometallic compounds of the elements aluminum, gallium and indium which are two-fold intramolecularly stabilized, and to the use thereof for the production of thin films and epitaxial layers by deposition from the liquid or so... | 11/09/1993 |
| 5174854 | Crystal growth of group II-VI compound semiconductor A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an u... | 12/29/1992 |
| 5055445 | Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy A method of forming an epitaxial layer of an oxidic high Tc superconductor on a substantially lattice matched monocrystalline substrate is described. The film is formed by liquid phase epitaxy utilizing a melt containing a nutriment composed of... | 10/08/1991 |
| 4906325 | Method of making single-crystal mercury cadmium telluride layers A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepa... | 03/06/1990 |
| 4872943 | Process for making monocrystalline HGCDTE layers A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is direc... | 10/10/1989 |
| 4698121 | Methods for the preparation of oriented thin large-area single crystals of diacetylenes and polydiacetylenes Methods for preparing thin large-area single crystals of diacetylenes and polydiacetylenes having surface dimensions greater than or equal to about 0.1 mm on all sides and a uniform thickness less than or equal to about 100 microns. The methods involve fo... | 10/06/1987 |
| 4684434 | Method for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula: wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to ... | 08/04/1987 |
| 4675207 | Process and apparatus for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent and at least one anionic constituent The invention relates to a process for the depositing on a substrate a thin film or layer of a compound having at least one cationic constituent C and at least one anionic constituent A, such as zinc sulphide. On the substrate are formed at least two superimpo... | 06/23/1987 |
| 4597823 | Rapid LPE crystal growth An apparatus and a method for growth of material on substrates. A substrate at temperature T2 is placed with a surface in contact with solution in streamline flow through a narrow channel. The solution enters the channel with a temperature, T | 07/01/1986 |
| 4594128 | Liquid phase epitaxy An apparatus and a method for the growth of an epitaxial layer on a substrate from a solution. Solution is brought into contact with a substrate in a narrow channel. Cooling fluid flowing through a second channel maintains the substrate temperature below ... | 06/10/1986 |
| 4589737 | Doped and undoped single crystal multilayered structures Disclosed is a multilayer electro-optical material having a plurality of adjacent, single crystals wherein each crystal layer has different electrical and optical properties from its adjacent layer or layers. This material is made by a method wherein the ... | 05/20/1986 |
| 4578126 | Liquid phase epitaxial growth process A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide. The high resistivity of the l... | 03/25/1986 |
| 4572763 | Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling... | 02/25/1986 |
| 4540461 | Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution A method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in pot... | 09/10/1985 |
| 4534820 | Method for manufacturing crystalline film A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a poly... | 08/13/1985 |
| 4482423 | Protection of semiconductor substrates during epitaxial growth processes Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is p... | 11/13/1984 |
| 4427714 | Thin films of compounds and alloy compounds of Group III and Group V elements A thin film of a compound or alloy compound of Group III and Group V elements, particularly of gallium arsenide or gallium arsenide compounds, is produced by impinging, e.g. spraying, onto a heated substrate a liquid or liquids comprising molecules carryi... | 01/24/1984 |
| 4389274 | Electrochemical deoxygenation for liquid phase epitaxial growth A method for removing residual oxygen from a growth solution prior to liq phase epitaxial crystal growth comprising the steps of disposing the materials in a containment vessel of a solid oxide electrolyte material under a protective atmosphere, heating ... | 06/21/1983 |
| 4373988 | Method of growing epitaxial layers from a liquid phase A rotary head is provided with supply chambers near the center of rotation ommunicating with slot-like channels extending radially to a surrounding annular space. Substrates are set into holders, such as dovetail guides in the channel walls to expose surfa... | 02/15/1983 |
| 4366771 | Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution Hg1-x Cdx Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg1-x Cdx Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution... | 01/04/1983 |
| 4315796 | Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure A compound semiconductor mixed crystal is grown by causing semiconductor-constituent material to travel, in dissolved liquid phase, through a solution having a portion contacting the source material and held at a constant high temperature and another port... | 02/16/1982 |
| 4293371 | Method of making magnetic film-substrate composites Magnetic film-substrate composites of enhanced quality are provided by rotating a garnet substrate immersed in a melt of magnetic film material to obtain a growth of magnetic film having uniaxial anistropy on the substrate normal to the substrate surface ... | 10/06/1981 |
