Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7326346 | High capacity regenerable sorbent for removal of arsenic and other toxic ions from drinking water The present invention is directed to a sorbent comprising a disordered polyvalent metal oxide on the surface of an inert substrate. The substrate can be a layered silicate, such as vermiculite, an aluminosilicate such as montmorillonite, or a nonlayered silicate suc... | 02/05/2008 |
| 7183235 | High capacity regenerable sorbent for removing arsenic and other toxic ions from drinking water The present invention is directed to a sorbent comprising a disordered polyvalent metal oxide on the surface of an inert substrate. The substrate can be a layered silicate, such as vermiculite, an aluminosilicate such as montmorillonite, or a nonlayered silicate suc... | 02/27/2007 |
| 7048781 | Chemically-impregnated silicate agents for mercury control The present invention is directed to a contaminant removal agent comprising a polyvalent metal sulfide on the surface of an inert substrate. The substrate can be a layered silicate, such as vermiculite, an aluminosilicate such as montmorillonite, or a nonlayered sil... | 05/23/2006 |
| 7025836 | Modification of surfaces in order to increase the surface tension A process is provided for the production of a surface coating as well as the use of surface coatings to increase the surface tension of objects. The surface coating is obtained by depositing a layer of at least one element that can be oxidized with water or an alloy... | 04/11/2006 |
| 6942840 | Method for removal and stabilization of mercury in mercury-containing gas streams The present invention is directed to a process and apparatus for removing and stabilizing mercury from mercury-containing gas streams. A gas stream containing vapor phase elemental and/or speciated mercury is contacted with reagent, such as an oxygen-containing oxid... | 09/13/2005 |
| 6911570 | Method for fixating sludges and soils contaminated with mercury and other heavy metals The invention relates to a method, composition and apparatus for stabilizing mercury and other heavy metals present in a particulate material such that the metals will not leach from the particulate material. The method generally involves the application of a metal ... | 06/28/2005 |
| 6562124 | Method of manufacturing GaN ingots A novel method for growing semiconductor material including GaN is disclosed. The method involves placing a first substance into a growth reactor, supplying a second gaseous substance into the grouth reactor, and applying electrical field to the second ga... | 05/13/2003 |
| 6299682 | Method for producing silicon ingot having directional solidification structure and apparatus for producing the same A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a cruc... | 10/09/2001 |
| 5840117 | Method for surface flattening a crystal substrate A method for surface flattening a crystal substrate includes (a) processing a surface of a silicon single crystal substrate, the surface deviating by 0.1° or less from the (001) plane, so as to form a processed zone thereon which is an obstacle to the mo... | 11/24/1998 |
| 5084248 | Apparatus for growing a compound semiconductor crystal An apparatus for growing a compound semiconductor crystal from a melt containing a plurality of component elements includes a crucible for accommodating the melt. A holding rod holds a seed crystal on which the compound semiconductor crystal is epitaxiall... | 01/28/1992 |
| 5011564 | Epitaxial growth An equilibrium growth dispersion for use in liquid epitaxial growth at a predetermined growth temperature of a compound including at least two constituents. Predetermined quantities each of the constituents are placed in a container, the predetermined qua... | 04/30/1991 |
| 4770738 | Electro hydrodynamic method for the preparation of a thin semiconductor film A method of preparing a thin film of a semiconductor material on a substrate, in which charged microdroplets of the semiconductor material or a constituent thereof are generated by electrohydrodynamic (EHD) extraction of the droplets from a meniscus force... | 09/13/1988 |
| 4620897 | Method for growing multicomponent compound semiconductor crystals A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducti... | 11/04/1986 |
| 4186045 | Method of epitaxial growth employing electromigration A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric current in an appropriate direction to effect migration of ... | 01/29/1980 |
| 4133705 | Method for the epitaxial deposition of a semiconductor material by electrical polarization of a liquid phase at constant temperature A method for the epitaxial deposition of a semiconductor by electrical polarization of a liquid phase at constant temperature. Outside the growth time the polarization is applied in the direction of the cooling by the Peltier effect with a current density whic... | 01/09/1979 |
| 4012242 | Liquid epitaxy technique In a preferred embodiment, a technique and associated apparatus for producing heteroepitaxial semi-conductor junctions preferably for Group III-V compounds in an improved liquid-solid transport method, placing a prescribed doped "limited-volume" melt dire... | 03/15/1977 |
| 3993511 | High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium For Peltier-induced liquid phase epitaxy on a substrate which is an intermetallic III-V compound of gallium, electrical contact is made to the substrate via a layer of gallium in which aluminum has been dissolved to a concentration of more than 0.5% by we... | 11/23/1976 |
| 3983012 | Epitaxial growth of silicon or germanium by electrodeposition from molten salts A method for electrodepositing an epitaxial crystal layer of germanium or silicon onto a single crystal substrate formed of germanium or silicon less noble than the layer. The substrate forms the cathode of an electrolytic cell containing a fused electrol... | 09/28/1976 |
| 3948692 | Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds AIII BV where AIII is a metal of group three and BV is a non-metal of group five The method of preparing multi-layer semiconductor heterostructures on the basis of compounds AIII BV, where AIII is an element of the third group and BV is an element of the fifth group, consists in crystallizat... | 04/06/1976 |
