Bizarre Patents
Apparatus for Simulating a High Five
A self-righting hand-arm configuration which is adapted to pivot when struck by a user, thereby simulating a "high five."
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are... | 04/22/2008 |
| 7170126 | Structure of vertical strained silicon devices A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces res... | 01/30/2007 |
| 7153359 | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal ... | 12/26/2006 |
| 7148129 | Method of growing selective area by metal organic chemical vapor deposition A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystal... | 12/12/2006 |
| 7135389 | Irradiation method of laser beam A laser irradiation method using a laser crystallization method which can heighten an efficiency of substrate processing as compared to a conventional one and also heighten mobility of a semiconductor film is provided. It is an irradiation method of a laser beam in ... | 11/14/2006 |
| 7122734 | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice... | 10/17/2006 |
| 7119000 | Method of manufacturing semiconductor device The resist film is provided on the surface of the substrate having electrodes, and openings are provided in the resist film at positions of the electrodes on the substrate. The first metal is supplied into the openings. The first metal is then heated to melt and coa... | 10/10/2006 |
| 7097303 | Polarizing devices and methods of making the same Certain, non-limiting embodiments of the disclosure provide ophthalmic elements and devices comprising an at least partial coating adapted to polarize at least transmitted radiation on at least a portion of at least one exterior surface of an ophthalmic element or s... | 08/29/2006 |
| 7097304 | Polarizing devices and methods of making the same Certain, non-limiting embodiments of the disclosure provide ophthalmic elements and devices comprising an at least partial coating adapted to polarize at least transmitted radiation on at least a portion of at least one exterior surface of an ophthalmic element or s... | 08/29/2006 |
| 7083679 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 08/01/2006 |
| 7077901 | Process for producing single crystal silicon wafers A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a sta... | 07/18/2006 |
| 7067396 | Method of producing a thin layer of semiconductor material The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion... | 06/27/2006 |
| 7044600 | Polarizing devices and methods of making the same Certain, non-limiting embodiments of the disclosure provide ophthalmic elements and devices comprising an at least partial coating adapted to polarize at least transmitted radiation on at least a portion of at least one exterior surface of an ophthalmic element or s... | 05/16/2006 |
| 6996321 | Optical waveguide and method of manufacture An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical wav... | 02/07/2006 |
| 6954240 | Method of producing polarizing plate, and liquid crystal display comprising the polarizing plate A polarizing plate produced according to the present invention includes a polarizing film and a protective layer bonded to a surface of the polarizing film, where the protective layer has no irregularities like record grooves caused by stretching of the polarizing f... | 10/11/2005 |
| 6940103 | Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 09/06/2005 |
| 6925216 | Direct-patterned optical waveguides on amorphous silicon films An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about ... | 08/02/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
| 6869479 | Method of laser-assisted fabrication of optoelectronic and photonic components The present invention provides a method for fabrication of integrated optical structures and micro-lenses on different substrates based on new process of laser-assisted deposition of optical materials on various crystalline or amorphous solid-state materials. The de... | 03/22/2005 |
| 6620710 | Forming a single crystal semiconductor film on a non-crystalline surface A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the sin... | 09/16/2003 |
| 6440212 | Low cost method for making thermoelectric coolers A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and p-type materials belong to conductive site pads on non-co... | 08/27/2002 |
| 6402836 | Method for epitaxial growth on a substrate The invention concerns a method for epitaxial growth of a material on a first solid material from a material melting on the material, characterized in that it comprises: a step of growth of the first material on the substrate, made of a second material; a... | 06/11/2002 |
| 6106613 | Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with... | 08/22/2000 |
| 6103072 | Piezoelectric thin-film device, process for manufacturing the same, and ink-jet recording head using the same A piezoelectric thin-film device includes: a substrate; and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 μm, a crystal grain size of the piezoelectric thin film is 0.05 to 1 μm, and a s... | 08/15/2000 |
| 5683506 | Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth... | 11/04/1997 |
| 5654229 | Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in first and second embodiments, respectively, the second layer ... | 08/05/1997 |
| 5639299 | Method of making compound semiconductor single-crystalline substrate for liquid phase epitaxial growth The disclosed method of making a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth has a relatively low cost and excellent practicality. The compound semiconductor single-crystalline substrate is prepared to have a surf... | 06/17/1997 |
| 5603762 | Process and apparatus for the production of films of oxide type single crystal A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overco... | 02/18/1997 |
| 5587015 | Apparatus for production of single crystal oxide films by liquid-phase epitaxy An apparatus for production of single crystal oxide films by liquid-phase epitaxy comprises an insulating core tube with an external high frequency heating means, an electroconductive cylindrical member having openings at both ends and being arranged in t... | 12/24/1996 |
| 5571321 | Method for producing a gallium phosphide epitaxial wafer This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have.... | 11/05/1996 |
| 5500390 | Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations ... | 03/19/1996 |
| 5374581 | Method for preparing semiconductor member A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon mo... | 12/20/1994 |
| 5371037 | Semiconductor member and process for preparing semiconductor member A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monoc... | 12/06/1994 |
| 5356509 | Hetero-epitaxial growth of non-lattice matched semiconductors A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconducto... | 10/18/1994 |
| 5326716 | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy The present invention relates to a new application of the liquid epitaxial method, especially the manufacturing of epitaxial monocrystalline semiconductor layers having high crystalline perfection in multi-layer arrangements on an intermediate layer of an... | 07/05/1994 |
| 5310696 | Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integr... | 05/10/1994 |
| 5310446 | Method for producing semiconductor film A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of com... | 05/10/1994 |
| 5284781 | Method of forming light emitting diode by LPE A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type layer (12). Subsequently, the first P-type layer (12) and th... | 02/08/1994 |
| 5221411 | Method for synthesis and processing of continuous monocrystalline diamond thin films Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to prod... | 06/22/1993 |
| 5180470 | Deposition of highly-oriented PTFE films and uses therefor Broadly the invention is a method for forming a highly-oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of highly-oriented poly(tetrafluoroethylene) with an orientation angle of less than 20° on a su... | 01/19/1993 |
