Did You Know...
...that "patent leather" got its name because the process of applying the polished black finish to leather was once patented?
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7375011 | Ex-situ doped semiconductor transport layer A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticl... | 05/20/2008 |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7223367 | Chemical sensor arrangement The present invention relates to a chemical sensor arrangement having an analyte sensitive indicator wherein the analyte sensitive indicator has at least one nanoparticle. The invention further relates to a method for providing nanoparticles of defined and different... | 05/29/2007 |
| 7104265 | Filter containing a metal phthalocyanine and a polycationic polymer A tobacco smoke filter comprising one or more than one metal phthalocyanine, such as a copper phthalocyanine or an iron phthalocyanine, and further comprising one or more than one polycationic polymer. ... | 09/12/2006 |
| 7083679 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 08/01/2006 |
| 7077901 | Process for producing single crystal silicon wafers A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a sta... | 07/18/2006 |
| 7068870 | Variable width waveguide for mode-matching and method for making A variable width waveguide useful for mode matching between dissimilar optical waveguides and optical fibers and a method for making the same is described. In one embodiment, a tapered waveguide is etched in a substrate, a cladding material is laid over the upper su... | 06/27/2006 |
| 7048797 | Liquid-phase growth process and liquid-phase growth apparatus A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epita... | 05/23/2006 |
| 6967176 | Method for making silicon containing dielectric films Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heate... | 11/22/2005 |
| 6951584 | Apparatus for producing semiconductor thin films on moving substrates An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solut... | 10/04/2005 |
| 6951585 | Liquid-phase growth method and liquid-phase growth apparatus A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness,... | 10/04/2005 |
| 6940103 | Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 09/06/2005 |
| 6936530 | Deposition method for Si-Ge epi layer on different intermediate substrates A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—G... | 08/30/2005 |
| 6921968 | Stacked flip chip package A stacked flip-chip package comprises a substrate having an opening, a back-to-face chip module, and an encapsulant. The back-to-face chip module is attached to the substrate and encapsulated by the encapsulant. The back-to-face chip module includes a first chip and... | 07/26/2005 |
| 6909194 | Electronic assembly having semiconductor component with polymer support member and method of fabrication A semiconductor component includes a substrate, bonding pads on the substrate, and external contacts bonded to the bonding pads. Exemplary external contacts include solder balls, solder bumps, solder columns, TAB bumps and stud bumps. Preferably the external contact... | 06/21/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
| 6875270 | Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same The invention relates to a Bi-substituted rare earth-iron garnet single-crystal film and a method for producing it, and also to a Faraday rotator comprising it. Its object is to provide a magnetic garnet single-crystal film which hardly cracks while it grows or is c... | 04/05/2005 |
| 6542299 | Material for bismuth substituted garnet thick film and a manufacturing method thereof A material for a bismuth substituted garnet thick film comprising Gd, Yb, Bi, Fe and Al as the main ingredient grown by a liquid phase growing method on a garnet substrate in which the composition of the garnet thickness is represented by the general form... | 04/01/2003 |
| 6440212 | Low cost method for making thermoelectric coolers A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and p-type materials belong to conductive site pads on non-co... | 08/27/2002 |
| 6059878 | Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth ox... | 05/09/2000 |
| 5985023 | Method for growth of a nitrogen-doped gallium phosphide epitaxial layer While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides ... | 11/16/1999 |
| 5817530 | Use of conductive lines on the back side of wafers and dice for semiconductor interconnects An apparatus and a method for increasing integrated circuit density comprising semiconductor wafers, wafer portions or dice ("semiconductor elements") having conductive traces on the back side thereof. These semiconductor elements are stacked such that th... | 10/06/1998 |
| 5725658 | Heat-treatment method of groups III-V compound semiconductor materials When a film is formed on a wafer of groups III-V compound semiconductors by heating, slips are formed in the periphery of the wafer because of residual inner stress of the wafer. The quality of an epitaxially grown crystal is damaged by these slips. The r... | 03/10/1998 |
| 5707891 | Method of manufacturing a light emitting diode A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocry... | 01/13/1998 |
| 5654229 | Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in first and second embodiments, respectively, the second layer ... | 08/05/1997 |
| 5652178 | Method of manufacturing a light emitting diode using LPE at different temperatures A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocry... | 07/29/1997 |
| 5650006 | Process for producing a lithium niobate-lithium tantalate single crystal substrate A film made of lithium niobate-lithium tantalate solid solution may be formed on a single crystal substrate having a composition of LiNb1-z Taz O3 (0ࣘz | 07/22/1997 |
| 5643827 | GaP light emitting substrate and a method of manufacturing it A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single... | 07/01/1997 |
| 5603761 | Liquid phase epitaxial growth method for carrying out the same In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least o... | 02/18/1997 |
| 5571321 | Method for producing a gallium phosphide epitaxial wafer This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have.... | 11/05/1996 |
| 5529938 | Method for producing light-emitting diode A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP ... | 06/25/1996 |
| 5518934 | Method of fabricating multiwavelength infrared focal plane array detector A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of Inx Ga1-x As (xࣘ0.53) absorption layers, between each pair of which a plurality of InAsy | 05/21/1996 |
| 5513593 | Liquid-phase heteroepitaxy method To produce a layer by liquid-phase heteroepitaxy a molten metal serving as the solvent is saturated at a first temperature with substrate material and compounded with layer material. The solution and the substrate are then separatly "overheated" to a seco... | 05/07/1996 |
| 5512511 | Process for growing HgCdTe base and contact layer in one operation A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molte... | 04/30/1996 |
| 5503103 | Method and apparatus for producing crystalline layers A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated. A concentration gradient of the layer-forming material is ... | 04/02/1996 |
| 5434101 | Process for producing thin film by epitaxial growth In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation... | 07/18/1995 |
| 5407858 | Method of making gap red light emitting element substrate by LPE To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga2 O3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said su... | 04/18/1995 |
| 5397736 | Liquid epitaxial process for producing three-dimensional semiconductor structures By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating material and/or carbone and/or metal, in order to produce three... | 03/14/1995 |
| 5356509 | Hetero-epitaxial growth of non-lattice matched semiconductors A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconducto... | 10/18/1994 |
