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| Number | Title | Issue Date |
| 7708831 | Process for producing ZnO single crystal according to method of liquid phase growth A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted ... | 05/04/2010 |
| 7695562 | Magnetic garnet single crystal and method for producing the same as well as optical element using the same It is an object of the present invention to provide a magnetic garnet single crystal at a reduced Pb content, and a method for producing the same and an optical element using the same. The object is attained with a magnetic garnet single crystal represented by the c... | 04/13/2010 |
| 7637998 | Method for producing single crystal silicon carbide Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does n... | 12/29/2009 |
| 7615115 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 11/10/2009 |
| RE40718 | Method for producing nitride monocrystals The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperat... | 06/09/2009 |
| 7422632 | Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate The features with size at least in one direction 1 μm growth method was developed by modifying liquid phase epitaxy. Number of processes was developed where duration and amplitude of the cooling pulse at the substrate interface were chosen in order to form low-dime... | 09/09/2008 |
| 7351743 | Therapeutic guanidines The present invention provides therapeutically useful substituted guanidines, and methods of treatment and pharmaceutical compositions that utilize or comprise one or more of such guanidines. ... | 04/01/2008 |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7341923 | Substrate, manufacturing method therefor, and semiconductor device A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the b... | 03/11/2008 |
| 7326293 | Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanos... | 02/05/2008 |
| 7297209 | Method and device for transferring anisotropic crystal film from donor to receptor, and the donor A method of forming an anisotropic crystal film, comprising providing a donor which comprises a base and an anisotropic crystal film bounded to the base, and a receptor. At least a portion of the anisotropic crystal film is placed in contact with the receptor. A loa... | 11/20/2007 |
| 7282190 | Silicon layer production method and solar cell production method A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping ... | 10/16/2007 |
| 7221037 | Method of manufacturing group III nitride substrate and semiconductor device The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) formi... | 05/22/2007 |
| 7205184 | Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same... | 04/17/2007 |
| 7186578 | Thin sheet production method and thin sheet production device In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method ... | 03/06/2007 |
| 7183229 | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, t... | 02/27/2007 |
| 7179330 | Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of... | 02/20/2007 |
| 7164183 | Semiconductor substrate, semiconductor device, and method of manufacturing the same A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress t... | 01/16/2007 |
| 7148530 | Ferroelectric capacitor and method for manufacturing the same A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequenti... | 12/12/2006 |
| 7138013 | Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materi... | 11/21/2006 |
| 7118625 | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is suppl... | 10/10/2006 |
| 7077901 | Process for producing single crystal silicon wafers A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a sta... | 07/18/2006 |
| 7071133 | Colored glass compositions and-automotive vision panels with-reduced transmitted-color shift A neutral gray colored glass composition for automotive vision panels having reduced transmitted color shift characteristics is provided. The glass composition has a base portion including 65 to 75 weight percent SiO2, 10 to 20 weight percent Na2 | 07/04/2006 |
| 7048797 | Liquid-phase growth process and liquid-phase growth apparatus A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epita... | 05/23/2006 |
| 7037585 | Coating composition yielding abrasion-resistant tintable coating A coating composition based upon at least partially hydrolyzed epoxy-functional alkoxy silanes and having particular utility in forming tintable, abrasion resistant coatings on lenses. Incorporation in the composition of a non-hydrolyzed epoxy-functional alkoxy sila... | 05/02/2006 |
| 7037811 | Method for fabricating a semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amo... | 05/02/2006 |
| 7037555 | Method of manufacturing a glazing panel A method of manufacturing a glazing panel having a solar factor (FS) of less than 70% and being composed of a vitreous substrate and a tin/antimony oxide coating layer provided on the vitreous substrate and having a Sb/Sn molar ratio ranging from 0.01 to 0.5, prefer... | 05/02/2006 |
| 7022181 | Liquid phase growth process, liquid phase growth system and substrate member production method In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucib... | 04/04/2006 |
| 7019340 | Bipolar transistor device and method for fabricating the same A bipolar transistor device having first and second semiconductor layers each formed on a substrate and composed of a Group III–V compound semiconductor of a first conductivity type and a third semiconductor layer formed between the first and second semiconductor ... | 03/28/2006 |
| 7015507 | Thin film transistor and method of fabricating the same Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active layer made of a non-single-cry... | 03/21/2006 |
| 7014711 | Liquid-phase growth apparatus and method A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors... | 03/21/2006 |
| 7008701 | Semiconductor member manufacturing method and semiconductor device manufacturing method This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15... | 03/07/2006 |
| 6960255 | Framework assisted crystal growth A method for growing a crystal includes steps of providing a 3D framework with an collection of solid structures and flowing a liquid starting material around and between individual ones of the solid structures of the 3D framework. The method also includes a step of... | 11/01/2005 |
| 6953506 | Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member an... | 10/11/2005 |
| 6951585 | Liquid-phase growth method and liquid-phase growth apparatus A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness,... | 10/04/2005 |
| 6951637 | Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 μm and 300 μm and use of the same The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and d... | 10/04/2005 |
| 6951584 | Apparatus for producing semiconductor thin films on moving substrates An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solut... | 10/04/2005 |
| 6942351 | Forming a silver coating on a vitreous substrate A process for forming a silver coating on a surface of a vitreous substrate is described. The process comprises an activating step in which said surface is contacted with an activating solution, a sensitising step in which said surface is contacted with a sensitisin... | 09/13/2005 |
| 6924213 | Semiconductor device and process for fabricating the same After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is d... | 08/02/2005 |
| 6902619 | Liquid phase epitaxy The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further ... | 06/07/2005 |
