Quotables
"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7758696 | Methods and systems for monitoring a solid-liquid interface Methods and systems are provided for monitoring a solid-liquid interface, including providing a vessel configured to contain an at least partially melted material; detecting radiation reflected from a surface of a liquid portion of the at least partially melted mate... | 07/20/2010 |
| 7025827 | Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped... | 04/11/2006 |
| 7011704 | Method and device for the production of a single crystal A method for the production of a single crystal has the single crystal crystallizing from a melt and being subjected to a rotation with an alternating rotation direction. The single crystal is periodically rotated through a sequence of rotation angles, and the rotat... | 03/14/2006 |
| 6902763 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 06/07/2005 |
| 6760396 | Coated metal articles and method of making The method of protectively coating metallic uranium which comprises dipping the metallic uranium in a molten alloy comprising about 20-75% of copper and about 80-25% of tin, dipping the coated uranium promptly into molten tin, withdrawing it from the molten tin and ... | 07/06/2004 |
| 6210478 | Refining and analysis of material using horizontal cold-crucible induction levitation melting A method and apparatus for locally and successively melting a material by induction heating using a horizontal floating-zone crucible to refine and/or analyze the material. An electromagnetic field is generated to create a localized molten zone within the... | 04/03/2001 |
| 5688321 | Apparatus for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 11/18/1997 |
| 5667585 | Method for the preparation of wire-formed silicon crystal Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal... | 09/16/1997 |
| 5258092 | Method of growing silicon monocrystalline rod The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized... | 11/02/1993 |
| 5069743 | Orientation control of float-zone grown TiC crystals A process is provided for the controlled growth of titanium carbide. Essentially, relatively fast, or low temperature growth, favors growth of single crystals having (100) orientation, while relatively slow, or high temperature growth, favors single cryst... | 12/03/1991 |
| 4851628 | Method for the crucible-free floating zone pulling of semiconductor rods and an induction heating coil therefor A method for pulling silicon semiconductor rods, in particular having diaers of 10cm and over. The current methods of crucible-free float zoning or float zone pulling can be markedly improved if the molten cap like zone which develops is forced inwardly ... | 07/25/1989 |
| 4708764 | Method of and apparatus for growing crystals A complex relative movement in a direction transverse to the crystal draw direction is imparted at the interface between the growing crystal bar and a melt of the crystallizable material by controlled electrical energization of a radial stabilizer acting... | 11/24/1987 |
| 4615760 | Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear In the float-zone processing of materials in a zero-gravity environment, such as outer space or in orbital flight, the Marangoni flow at the free surface of the float zone is stopped by directing streams of heated, non-reactive gas(es) tangentially to the... | 10/07/1986 |
| 4436578 | Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof, by means of a single-winding induction heating coil having an inner diameter smaller than the diameter of a portion of the rod being fed ... | 03/13/1984 |
| 4325777 | Method and apparatus for reforming an improved strip of material from a starter strip of material A process and apparatus for reforming an improved strip (12) of material from a starting strip (16) of material. An electromagnetic device (18) maintains a floating molten zone (20) of the material in the starting strip (16) of the material and also forms... | 04/20/1982 |
| 4257841 | Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod Apparatus and method for stabilizing and supporting a crystal semiconductor rod during fabrication refining from the action of a seed rod on a float zone melt of a crystalline rod source is provided wherein engageable fingers mounted in a vertically movab... | 03/24/1981 |
| 4140571 | Crucible-free zone refining of semiconductor material including annular support member A process for the crucible-free zone pulling of a polycrystalline rod held ertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means o... | 02/20/1979 |
| 4072556 | Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same Device for crucible-free zone melting a crystalline rod, end-supported by holders, one of the holders being rotatable about the longitudinal axis thereof, includes an induction heating coil disposed between the end holders and coaxial to the longitudinal ... | 02/07/1978 |
| 4045278 | Method and apparatus for floating melt zone of semiconductor crystal rods Stock semiconductor crystal rods are zone melt refined by positioning such stock rods in a zone melt environment with a seed crystal attached to a lower end thereof, generating a melt zone at the juncture of the seed crystal and stock rod and controllably... | 08/30/1977 |
| 3996096 | Method for crucible-free zone melting of semiconductor crystal rods Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture... | 12/07/1976 |
| 3988197 | Crucible-free zone melting of semiconductor crystal rods including oscillation dampening Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture... | 10/26/1976 |
| 3985947 | Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods A device for crucible free zone melting on crystallizable rods, in particular on semiconductor rods, in which the molten zone is produced in the rod which is to be treated, by the electromagnetic field of an induction heating coil which surrounds the rod ... | 10/12/1976 |
| 3976536 | Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod A method and apparatus for controlling a radial path of resistance in a semiconductor monocrystalline rod produced by a crucible-free zone melting whereby the material flow path and heat distribution in the melt zone is controlled by a guided stream of pr... | 08/24/1976 |
| 3935059 | Method of producing single crystals of semiconductor material by floating-zone melting In a floating-zone melting process for producing single crystals of a semi-conductor material from a semi-conductor rod and a seed crystal, the rod is heated by high-frequency induction from an inductance coil which is spaced from a short-circuited annula... | 01/27/1976 |
