Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7335257 | Apparatus for and method of manufacturing a single crystal rod An apparatus is provided for manufacturing a single crystal rod from a poly crystal feed rod including a closed chamber at which chamber the feed rod is located. The chamber has an annular energy supply arranged around the feed rod for melting off the one end of the... | 02/26/2008 |
| 7117754 | Torque ripple sensor and mitigation mechanism A torque ripple sensor and method for torque ripple sensing and/or mitigation. A piezoelectric sensor is positioned relative to a motor so that torque fluctuations due to torque ripple of the motor are transmitted to the sensor, resulting in strain of a piezoelectri... | 10/10/2006 |
| 7025827 | Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped... | 04/11/2006 |
| 6997016 | Method and apparatus for manufacturing glass tube Stress exerted on an inner or outer circumferential side of a glass tube 6 is controlled when a glass material 3 is heated and softened by a heating element 41 provided around the glass material 3 and a piercing plug 31 is relative... | 02/14/2006 |
| 6966946 | Crystal production method for gallium oxide-iron mixed crystal A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper a... | 11/22/2005 |
| 6760396 | Coated metal articles and method of making The method of protectively coating metallic uranium which comprises dipping the metallic uranium in a molten alloy comprising about 20-75% of copper and about 80-25% of tin, dipping the coated uranium promptly into molten tin, withdrawing it from the molten tin and ... | 07/06/2004 |
| 6712902 | Feed rod for growing magnetic single crystal, magnetic single crystal, and method of producing a magnetic single crystal A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-α, wherein A is at least one element selected from the lanthanoide series, B is at least o... | 03/30/2004 |
| 6663711 | Growth in solution in a float zone of crystals of a compound or an alloy A process produces a crystal of a material with non-congruent melting using at least one first element and a second element. The process includes (a) placing, in a vertical alignment and maintaining under a controlled atmosphere, a bar of the first elemen... | 12/16/2003 |
| 6387178 | Single crystal producing method and apparatus A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section; placing a heat light source at another focal point; and e... | 05/14/2002 |
| 6210478 | Refining and analysis of material using horizontal cold-crucible induction levitation melting A method and apparatus for locally and successively melting a material by induction heating using a horizontal floating-zone crucible to refine and/or analyze the material. An electromagnetic field is generated to create a localized molten zone within the... | 04/03/2001 |
| 6165263 | Method for growing single crystal A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth... | 12/26/2000 |
| 6039802 | Single crystal growth method There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and s... | 03/21/2000 |
| 5792258 | High-frequency induction heater and method of producing semiconductor single crystal using the same A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of ... | 08/11/1998 |
| 5688321 | Apparatus for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 11/18/1997 |
| 5556461 | Method for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 09/17/1996 |
| 5310531 | Polycrystalline silicon rod for floating zone method and process for making the same A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over a... | 05/10/1994 |
| 5211802 | Method for producing silicon single crystal from polycrystalline rod formed by continous casting A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is gro... | 05/18/1993 |
| 5069743 | Orientation control of float-zone grown TiC crystals A process is provided for the controlled growth of titanium carbide. Essentially, relatively fast, or low temperature growth, favors growth of single crystals having (100) orientation, while relatively slow, or high temperature growth, favors single cryst... | 12/03/1991 |
| 4931945 | Method of controlling floating zone A method of controlling a floating zone applied to a crystal manufacturing system based on the FZ method and designed to enable the diameter at the crystallization boundary and the axial length of the floating zone or other similar quantities to desired v... | 06/05/1990 |
| 4722764 | Method for the manufacture of dislocation-free monocrystalline silicon rods A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline sili... | 02/02/1988 |
| 4556448 | Method for controlled doping of silicon crystals by improved float zone technique An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled ... | 12/03/1985 |
| 4436578 | Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof, by means of a single-winding induction heating coil having an inner diameter smaller than the diameter of a portion of the rod being fed ... | 03/13/1984 |
| 4292487 | Method for initiating the float zone melting of semiconductors An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby control... | 09/29/1981 |
| 4273608 | Method of forming a sheet of single crystal semiconductor material Apparatus for forming thin layers of material such as single crystalline silicon includes a container having a generally cylindrical interior surface. The container is rotatably mounted and movable through a heater. In forming the layer of material, the m... | 06/16/1981 |
| 4270972 | Method for controlled doping semiconductor material with highly volatile dopant In conjunction with the use of a float-zone crystal grower for doping silicon, a holder for temporarily storing pellets of solid dopant is disposed outside the housing of the crystal grower. A rotatable cylinder in the holder is provided with a plurality ... | 06/02/1981 |
| 4210486 | Process for determining the effective doping agent content of hydrogen for the production of semiconductors A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subs... | 07/01/1980 |
| 4110586 | Manufacture of doped semiconductor rods Process for doping a semiconductor rod which comprises securing a semicontor rod containing a dopant and having a substantially smaller cross section than the rod to be doped against said rod, with the axes of the two rods substantially parallel to one a... | 08/29/1978 |
| 4094730 | Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod t... | 06/13/1978 |
| 4072556 | Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same Device for crucible-free zone melting a crystalline rod, end-supported by holders, one of the holders being rotatable about the longitudinal axis thereof, includes an induction heating coil disposed between the end holders and coaxial to the longitudinal ... | 02/07/1978 |
| 3985947 | Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods A device for crucible free zone melting on crystallizable rods, in particular on semiconductor rods, in which the molten zone is produced in the rod which is to be treated, by the electromagnetic field of an induction heating coil which surrounds the rod ... | 10/12/1976 |
| 3976536 | Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod A method and apparatus for controlling a radial path of resistance in a semiconductor monocrystalline rod produced by a crucible-free zone melting whereby the material flow path and heat distribution in the melt zone is controlled by a guided stream of pr... | 08/24/1976 |
| 3935059 | Method of producing single crystals of semiconductor material by floating-zone melting In a floating-zone melting process for producing single crystals of a semi-conductor material from a semi-conductor rod and a seed crystal, the rod is heated by high-frequency induction from an inductance coil which is spaced from a short-circuited annula... | 01/27/1976 |
