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| Number | Title | Issue Date |
| 7326294 | Preparation of small crystals Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1s, for example 10 ms. The liquid within the fluidic vortex mixer (12) is subjected to high intensity u... | 02/05/2008 |
| 7258740 | Method and apparatus for fabricating a crystal fiber by utilizing at least two external electric fields The present invention relates to an apparatus for making a source material into a crystal fiber having different regions of polarization inversion. The apparatus of the present invention is similar to a laser-heated pedestal growth (LHPG) apparatus, characterized in... | 08/21/2007 |
| 7241702 | Processing method for annealing and doping a semiconductor A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (... | 07/10/2007 |
| 7025827 | Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped... | 04/11/2006 |
| 6966946 | Crystal production method for gallium oxide-iron mixed crystal A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper a... | 11/22/2005 |
| 6942731 | Method for improving the efficiency of epitaxially produced quantum dot semiconductor components The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often... | 09/13/2005 |
| 6932865 | System and method of making single-crystal structures through free-form fabrication techniques A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by building from feedstock on top of and upward from a heated base elemen... | 08/23/2005 |
| 6911717 | Processing method and apparatus for annealing and doping semiconductor A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having... | 06/28/2005 |
| 6712902 | Feed rod for growing magnetic single crystal, magnetic single crystal, and method of producing a magnetic single crystal A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-α, wherein A is at least one element selected from the lanthanoide series, B is at least o... | 03/30/2004 |
| 6635555 | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films A method is provided to produce thin polycrystalline films having a single predominant crystal orientation. The method is well suited to the production of films for use in production of thin film transistors (TFTs). A layer of amorphous silicon is deposit... | 10/21/2003 |
| 6387178 | Single crystal producing method and apparatus A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section; placing a heat light source at another focal point; and e... | 05/14/2002 |
| 6210478 | Refining and analysis of material using horizontal cold-crucible induction levitation melting A method and apparatus for locally and successively melting a material by induction heating using a horizontal floating-zone crucible to refine and/or analyze the material. An electromagnetic field is generated to create a localized molten zone within the... | 04/03/2001 |
| 6039802 | Single crystal growth method There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and s... | 03/21/2000 |
| 6033470 | Method of producing a cerium-containing magnetic garnet single crystal The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containin... | 03/07/2000 |
| 5935374 | Electronic device fabrication apparatus An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the reaction chamber for supplying reaction gas into the react... | 08/10/1999 |
| 5762707 | Floating zone melting apparatus The present invention provides an apparatus for permitting easy formation of a stable molten region and easy growing of even large-diameter single crystals, with a good-quality of single crystals, of which a floating zone melting apparatus of the infrared... | 06/09/1998 |
| 5556461 | Method for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 09/17/1996 |
| 5499598 | Method for producing a silicon rod Silicon granules filled in a nonconductive cylinder are locally heated from outside of the cylinder using a local heating means, for example, a radio-frequency induction heating coil etc. to form a silicon granule sintering portion and a silicon melting p... | 03/19/1996 |
| 5437243 | Process for fabricating diamond by supercritical electrical current Human-made diamond, as well as naturally found diamond, is a transparent, superhard, crystalline, and electrically nonconductive form of carbon. In this invention, an electrical current of supercritical density alone produces the transformation of graphit... | 08/01/1995 |
| 5386797 | Single crystal of compound, laser rod, laser oscillator, scintillator, CT scanner, color display and process for preparing the same A single crystal of a compound comprises which easily decomposes at a temperature around the melting point and evaporates at least a part of the compound having a volume of 5 cc or more and a composition deviation of respective elements from the stoichiom... | 02/07/1995 |
| 5386798 | Method for continuous control of composition and doping of pulsed laser deposited films A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a depositi... | 02/07/1995 |
| 5310531 | Polycrystalline silicon rod for floating zone method and process for making the same A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over a... | 05/10/1994 |
| 5217565 | Contactless heater floating zone refining and crystal growth Floating zone refining or crystal growth is carried out by providing rapid relative rotation of a feed rod and finish rod while providing heat to the junction between the two rods so that significant forced convection occurs in the melt zone between the t... | 06/08/1993 |
| 5178840 | Single wafer regrowth of silicon A wafer chuck is used to support a circular silicon wafer, which was formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop... | 01/12/1993 |
| 5007980 | Liquid encapsulated zone melting crystal growth method and apparatus A method and apparatus for growing an extended length single crystal of a Group III-V or II-VI material such as GaAs by moving a crucible containing a seed crystal and precompounded crystal material encapsulated in a molten encapsulant preferably vertical... | 04/16/1991 |
| 4740264 | Liquid encapsulated float zone process and apparatus Process and apparatus for growing crystals using float zone techniques. A rod (34) of crystalline materials is disposed in a cylindrical container (36), with a space being left between the rod and container walls. The space is filled with an encapsulant (... | 04/26/1988 |
| 4731516 | Laser polishing semiconductor wafer The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its traili... | 03/15/1988 |
| 4634492 | Chrysoberyl single crystal and method of producing the same In order to produce a chrysoberyl single crystal displaying a luminous band effect, a mixture of a principal component consisting of beryllium oxide and aluminum oxide in nearly equal molar amounts with small amounts of titanium oxide and coloring metal o... | 01/06/1987 |
| 4615760 | Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear In the float-zone processing of materials in a zero-gravity environment, such as outer space or in orbital flight, the Marangoni flow at the free surface of the float zone is stopped by directing streams of heated, non-reactive gas(es) tangentially to the... | 10/07/1986 |
| 4602980 | Method for improving crystallinity of semiconductor ribbon A method is disclosed for improving the crystallinity of semiconductor ribbon material while increasing the material throughput and decreasing energy requirements. The crystallinity of a ribbon of semiconductor material can be improved by forming a locali... | 07/29/1986 |
| 4547256 | Method for thermally treating a semiconductor substrate Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal treatment temperature and then is further heated to a higher temp... | 10/15/1985 |
| 4532000 | Fabrication of single crystal fibers from congruently melting polycrystalline fibers This invention provides a method for conversion of congruently melting polycrystalline fibers to single crystal fibers. The method is particularly useful for production of fibers ranging from about 30 μm to about 1,000 μm in diameter, which are capable ... | 07/30/1985 |
| 4510015 | Method for semiconductor ribbon-to-ribbon conversion A method is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edg... | 04/09/1985 |
| 4218282 | Method of preparation of chrysoberyl and beryl single crystals Single crystals of chrysoberyl and beryl are prepared in a process in which the rods are formed of the desired composition and the rods are heated in a controlled atmosphere using infra-red rays. The infra-red rays are focussed upon a restricted portion o... | 08/19/1980 |
| 4199397 | Spontaneous growth of large crystal semiconductor material by controlled melt perturbation A polycrystalline semiconductor sheet may be converted to a macrocrystalline or monocrystalline semiconductor sheet through use of a controlled melt perturbation in the sheet. The process is initiated by formation of a small melt area generally in the cen... | 04/22/1980 |
| 4197157 | Method for forming refractory tubing Refractory tubings, either in amorphous, polycrystalline or single crystal form, are made by moving a preformed tubing of a refractory material and a heated zone relative to each other, the heating zone providing sufficient heat to melt through the tubing... | 04/08/1980 |
| 4094730 | Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod t... | 06/13/1978 |
| 4030963 | Arc-melting preparation of single crystal LaB6 cathodes A method for preparing single crystals of lanthanum hexaboride (LaB6) by arc melting a rod of compacted LaB6 powder. The method is especially suitable for preparing single crystal LaB6 cathodes for use in scanning electron... | 06/21/1977 |
| 3943324 | Apparatus for forming refractory tubing Refractory tubings approaching theoretical density, either in polycrystalline or single crystal form, are made by moving a preformed tubing of a refractory material and a heated zone relative to each other, the heating zone providing sufficient heat to me... | 03/09/1976 |
| 3935058 | Zone melting process Increased heat control is obtained in the melting zone of a zone melting process utilizing an electric current passed longitudinally through the charge, to melt the charge, by constricting the melted charge in the melting zone.... | 01/27/1976 |
