Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7520932 | Method of analyzing carbon concentration in crystalline silicon A method of analyzing carbon concentration in crystalline silicon includes providing a section from a zoned and annealed silicon core. The zoned and annealed core is extracted from a polycrystalline silicon composition and has a columnar shape. The zoned and anneale... | 04/21/2009 |
| 7399360 | Crucible and method of growing single crystal by using crucible Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of ... | 07/15/2008 |
| 7361219 | Method for producing silicon wafer and silicon wafer The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be di... | 04/22/2008 |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7335257 | Apparatus for and method of manufacturing a single crystal rod An apparatus is provided for manufacturing a single crystal rod from a poly crystal feed rod including a closed chamber at which chamber the feed rod is located. The chamber has an annular energy supply arranged around the feed rod for melting off the one end of the... | 02/26/2008 |
| 7326297 | Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material,... | 02/05/2008 |
| 7258740 | Method and apparatus for fabricating a crystal fiber by utilizing at least two external electric fields The present invention relates to an apparatus for making a source material into a crystal fiber having different regions of polarization inversion. The apparatus of the present invention is similar to a laser-heated pedestal growth (LHPG) apparatus, characterized in... | 08/21/2007 |
| 7226571 | High resistivity silicon wafer and method for fabricating the same A high resistivity p type silicon wafer with a resistivity of 100 Ωcm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication process is performed, a p/n type conversion layer due to thermal donor g... | 06/05/2007 |
| 6966946 | Crystal production method for gallium oxide-iron mixed crystal A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper a... | 11/22/2005 |
| 6935618 | Valve component with multiple surface layers A sliding component, particularly a disk valve plate. The sliding component includes a multi-layer surface structure comprising a strengthening layer harder than the substrate material, and an amorphous diamond top layer. ... | 08/30/2005 |
| 6712902 | Feed rod for growing magnetic single crystal, magnetic single crystal, and method of producing a magnetic single crystal A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-α, wherein A is at least one element selected from the lanthanoide series, B is at least o... | 03/30/2004 |
| 6663711 | Growth in solution in a float zone of crystals of a compound or an alloy A process produces a crystal of a material with non-congruent melting using at least one first element and a second element. The process includes (a) placing, in a vertical alignment and maintaining under a controlled atmosphere, a bar of the first elemen... | 12/16/2003 |
| 6251182 | Susceptor for float-zone apparatus The present invention is an improved susceptor for a float-zone apparatus for the float-zone processing of silicon elements. The susceptor is of a cylindrical design which allows the susceptor to be positioned around a free end of a silicon element to hea... | 06/26/2001 |
| 6165263 | Method for growing single crystal A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth... | 12/26/2000 |
| 6143070 | Silicon-germanium bulk alloy growth by liquid encapsulated zone melting The present invention describes the growth of single crystals of non-congruently melting alloys, in particular, silicon-germanium of constant composition in a quartz ampoule by the use of CaCl2 as an encapsulant for the liquid encapsulated zone... | 11/07/2000 |
| 6039802 | Single crystal growth method There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and s... | 03/21/2000 |
| 5900060 | Pressurized skull crucible apparatus for crystal growth and related system and methods The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure. The apparatus includes a pressure vessel that contains a pressurized gas. The apparatus also includes... | 05/04/1999 |
| 5897705 | Process for the production of an epitaxially coated semiconductor wafer A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the... | 04/27/1999 |
| 5891828 | Method of producing superconducting PrBa2 Cu3 Oy single crystal and PrBa2 Cu3 Oy superconducting device PrBa2 Cu3 OY exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxid... | 04/06/1999 |
| 5863326 | Pressurized skull crucible for crystal growth using the Czochralski technique The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure using the Czochralski technique. The apparatus includes a pressure vessel that contains a pressurized ... | 01/26/1999 |
| 5833748 | Method of and apparatus for obtaining fissure-free crystals A process and an apparatus for obtaining unfissured crystals of GaAs after the crystal has been formed by direction solidification from a melt in a quartz crucible. The quartz crucible is immersed in molten potassium hydroxide or sodium hydroxide at a tem... | 11/10/1998 |
| 5792258 | High-frequency induction heater and method of producing semiconductor single crystal using the same A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of ... | 08/11/1998 |
| 5744380 | Method of fabricating an epitaxial wafer There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorpora... | 04/28/1998 |
| 5688321 | Apparatus for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 11/18/1997 |
| 5667585 | Method for the preparation of wire-formed silicon crystal Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal... | 09/16/1997 |
| 5665664 | Grain boundary-free crystalline body of manganese-based composite oxide and method for the preparation thereof Proposed is a grain boundary-free crystalline body of a perovskite structure having a chemical composition of the formula Pr1-x Mx MnO3, in which M is calcium or strontium and the subscript x is a number of 0.3 to 0.5, whi... | 09/09/1997 |
| 5556461 | Method for producing a silicon single crystal by a float-zone method A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 μm; heating a portion of the polysilicon rod to form a molten zone while applyin... | 09/17/1996 |
| 5499598 | Method for producing a silicon rod Silicon granules filled in a nonconductive cylinder are locally heated from outside of the cylinder using a local heating means, for example, a radio-frequency induction heating coil etc. to form a silicon granule sintering portion and a silicon melting p... | 03/19/1996 |
| 5476063 | Method of production of single crystal A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.... | 12/19/1995 |
| 5444040 | Superconductive oxide single crystal and manufacturing method thereof A method of manufacturing a single crystal of a superconductive oxide by a travelling solvent floating zone method (TSFZ Method). In this manufacturing method, a sintered feed rod of an oxide belonging to a tetragonal system, exhibiting anisotropic proper... | 08/22/1995 |
| 5437243 | Process for fabricating diamond by supercritical electrical current Human-made diamond, as well as naturally found diamond, is a transparent, superhard, crystalline, and electrically nonconductive form of carbon. In this invention, an electrical current of supercritical density alone produces the transformation of graphit... | 08/01/1995 |
| 5436164 | Analytical method for particulate silicon The instant invention is a method for converting particulate silicon into monocrystalline silicon suitable for the determination of contaminates present in the particulate silicon. The method uses a silicon vessel, with known levels of the contaminates to... | 07/25/1995 |
| 5427057 | Self-clamping holder for polysilicon rod used in floating-zone single-crystal growth method A self-clamping holder capable of holding a polysilicon rod using the weight of the polysilicon rod is disclosed. The holder includes a generally cup-shaped adapter having an open end facing downward, and at least three clamp jaws rotatably mounted on the... | 06/27/1995 |
| 5409892 | Method of maufacturing superconductor of ceramics superconductive material A method of manufacturing a superconductor by applying a floating zone method to a raw material sintered ingot. This method is adapted to obtain an elongated superconductor which can provide high critical current density. A floating zone is moved along th... | 04/25/1995 |
| 5386797 | Single crystal of compound, laser rod, laser oscillator, scintillator, CT scanner, color display and process for preparing the same A single crystal of a compound comprises which easily decomposes at a temperature around the melting point and evaporates at least a part of the compound having a volume of 5 cc or more and a composition deviation of respective elements from the stoichiom... | 02/07/1995 |
| 5369090 | Process for producing bi-based oxide superconductor single crystals A process for producing Bi-based oxide superconductor single crystals by the floating zone method is disclosed, which comprises using a feed rod of an oxide comprising a formulation of metallic elements represented by the following general formula: Bi | 11/29/1994 |
| 5367981 | Apparatus for manufacturing crystals through floating zone method A apparatus for manufacturing crystals through a floating zone method which includes: structure for forming a heat-melt zone so as to be held at an upper portion of a solid crystal; a barrier enclosure having an opening a lower end portion and provided in... | 11/29/1994 |
| 5007980 | Liquid encapsulated zone melting crystal growth method and apparatus A method and apparatus for growing an extended length single crystal of a Group III-V or II-VI material such as GaAs by moving a crucible containing a seed crystal and precompounded crystal material encapsulated in a molten encapsulant preferably vertical... | 04/16/1991 |
| 4740264 | Liquid encapsulated float zone process and apparatus Process and apparatus for growing crystals using float zone techniques. A rod (34) of crystalline materials is disposed in a cylindrical container (36), with a space being left between the rod and container walls. The space is filled with an encapsulant (... | 04/26/1988 |
| 4722764 | Method for the manufacture of dislocation-free monocrystalline silicon rods A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline sili... | 02/02/1988 |
