Bizarre Patents
Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 7384476 | Method for crystallizing silicon A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the ... | 06/10/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7357115 | Wafer clamping apparatus and method for operating the same A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafe... | 04/15/2008 |
| 7312471 | Liquid crystal display device having drive circuit and fabricating method thereof A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etc... | 12/25/2007 |
| 7300858 | Laser crystallization and selective patterning using multiple beamlets A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may ... | 11/27/2007 |
| 7264878 | Laminated carbon foam sandwich for naval decking A laminate sandwich structure useful for, inter alia, decking for naval vessels, which includes a core formed of carbon foam having a ratio of compressive strength to density of at least about 7000 psi/g/cc. ... | 09/04/2007 |
| 7195713 | Material for chromatography Granulated products are provided and include carbonaceous particles and a carbonized agent or binder. The agent or binder is preferably a synthetic resin, pitch component, or mixture thereof. Packing materials for packing columns used in chromatographic separations ... | 03/27/2007 |
| 7153359 | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal ... | 12/26/2006 |
| 7135070 | Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making Monolithic stacked/layered room-temperature-processed materials whose internal crystalline structures are laser modification to create arrays of mechanical, and combined mechanical and electrical, devices with precision-established properties, such as important mech... | 11/14/2006 |
| 7128783 | Thin-film crystal-structure-processed mechanical devices, and methods and systems for making Thin-film laser-effected internal crystalline structure modified materials suitable for the creation of various small-dimension mechanical devices, either singly or in monolithic arrays, such as MEMS devices. Processing is carried out at room temperature and atmosph... | 10/31/2006 |
| 7125451 | Crystal-structure-processed mechanical devices and methods and systems for making Laser processing of various materials to create mechanical devices whose internal mechanical properties are provided in final useable form by adjustments made in internal crystalline structure. ... | 10/24/2006 |
| 7008534 | Material for chromatography Granulated products are provided and include carbonaceous particles and a carbonized agent or binder. The agent or binder is preferably a synthetic resin, pitch component, or mixture thereof. Packing materials for packing columns used in chromatographic separations ... | 03/07/2006 |
| 6992037 | Precious metal catalyst for debenzylation One aspect of the invention relates to catalyst composite containing a metal catalyst and a specifically defined carbon support containing a carbonaceous material. For example, the carbon support may have a total pore surface area of about 800 m2/g or mor... | 01/31/2006 |
| 6932865 | System and method of making single-crystal structures through free-form fabrication techniques A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by building from feedstock on top of and upward from a heated base elemen... | 08/23/2005 |
| 6921434 | Regulated growth method for laser irradiating silicon films A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent... | 07/26/2005 |
| 6840999 | In situ regrowth and purification of crystalline thin films Amorphous or polycrystalline films have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone melting technique, in which an electrically heated wire generated a narrow heated or molten zone (0.5-2 mm wide) on the substrate sandwiche... | 01/11/2005 |
| 6660085 | Polycrystal thin film forming method and forming system A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film ... | 12/09/2003 |
| 6645454 | System and method for regulating lateral growth in laser irradiated silicon films A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating ea... | 11/11/2003 |
| 6635555 | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films A method is provided to produce thin polycrystalline films having a single predominant crystal orientation. The method is well suited to the production of films for use in production of thin film transistors (TFTs). A layer of amorphous silicon is deposit... | 10/21/2003 |
| 6210478 | Refining and analysis of material using horizontal cold-crucible induction levitation melting A method and apparatus for locally and successively melting a material by induction heating using a horizontal floating-zone crucible to refine and/or analyze the material. An electromagnetic field is generated to create a localized molten zone within the... | 04/03/2001 |
| 6113689 | Method of crystallizing amorphous silicon layer A method of crystallizing an amorphous silicon layer on a substrate includes the steps of irradiating the amorphous silicon layer by a laser beam positioned over the amorphous silicon layer and having a predetermined repeat rate, while simultaneously part... | 09/05/2000 |
| 5741359 | Method and apparatus for zone-melting recrystallization of semiconductor layer An apparatus for zone-melting recrystallization of a semiconductor layer includes a first heater, on which a semiconductor wafer including the semiconductor layer and upper and lower insulating films sandwiching the semiconductor layer is mounted, for rad... | 04/21/1998 |
| 5490477 | Process for the production of semiconductor foils and their use High purity semiconductor foils, such as silicon foils useful in solar energy cells, are produced by treating an impure semiconductor foil with at least one reactive gas while in the crystallizing state.... | 02/13/1996 |
| 5296089 | Enhanced radiative zone-melting recrystallization method and apparatus A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental p... | 03/22/1994 |
| 5248377 | Crystal-growth furnace for interface curvature control In a Bridgman-type apparatus for growing single crystals, a pair of different gradient sections is located around the respective liquid and solid phases of a sample undergoing solidification. Each gradient section is chosen with thermal characteristics ma... | 09/28/1993 |
| 5178840 | Single wafer regrowth of silicon A wafer chuck is used to support a circular silicon wafer, which was formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop... | 01/12/1993 |
| 5133829 | Single wafer regrowth of silicon A wafer chuck is used to support a circular silicon wafer, which has formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop... | 07/28/1992 |
| 5074952 | Zone-melt recrystallization method and apparatus The improved zone-melt recrystallization apparatus is comprised of a heating element having a plurality of individually controllable heating elements. The elements are heated in sequence to generate a melted zone within a semiconductor material which is t... | 12/24/1991 |
| 5007979 | Method of fabricating GaAs single crystal A method of fabricating an undoped or impurity-doped semi-insulating GaAs single crystal with the use of a silica boat comprises the steps of making a melt of GaAs in the silica boat except for a seed crystal, doping the melt with oxygen, maintaining the ... | 04/16/1991 |
| 4907177 | Computerized multi-zone crystal growth furnace precise temperature and heating control method A computerized method of digitally controlling the temperature profile of a heated article in which the temperature profile is defined by a plurality of temperature zones spaced about the article. The temperature profile of the article is monitored and a ... | 03/06/1990 |
| 4749438 | Method and apparatus for zone recrystallization A method and apparatus for producing crystalline ribbons by zone melting. Means for coupling electromagnetic energy into a film of material are provided to appropriately induce electrical currents in order to control and restrict the molten zone and suppr... | 06/07/1988 |
| 4690797 | Method for the manufacture of large area silicon crystal bodies for solar cells A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a sui... | 09/01/1987 |
| 4643797 | Method for the manufacture of large area silicon crystal bodies for solar cells Recrystallized silicon plates are readily removed from a carrier member after melting and recrystallization, the carrier member being composed of a material that is not appreciably wettable by molten silicon, through the use of a parting agent between the... | 02/17/1987 |
| 4483736 | Method for producing a single crystal of a IIIb -Vb compound When the growth of a single crystalline IIIb -Vb group compound is carried out employing the horizontal Bridgeman method or the gradient freeze method, it is likely that polycrystals will be grown, crystal defects will form, and the ... | 11/20/1984 |
| 4382186 | Process and apparatus for converged fine line electron beam treatment of objects This disclosure is concerned with the use of fine line converged electron beams of high aspect ratio for effecting physical, chemical, mechanical and other changes in the surface of objects, and also volume effects, including applications, for example, to... | 05/03/1983 |
| 4350561 | Single crystal processes and products The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to p... | 09/21/1982 |
| 4285760 | Zone purification of cylindrical ingots Cylindrical ingots of materials that expand on melting or freezing are purified or zone refined by a process which includes providing a tubular container having both a cylindrical cavity and a slot along its entire length. In zone refining, as is well-kno... | 08/25/1981 |
| 4273608 | Method of forming a sheet of single crystal semiconductor material Apparatus for forming thin layers of material such as single crystalline silicon includes a container having a generally cylindrical interior surface. The container is rotatably mounted and movable through a heater. In forming the layer of material, the m... | 06/16/1981 |
| 4250148 | Apparatus and method for producing polycrystalline ribbon A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit... | 02/10/1981 |
| 4102767 | Arc heater method for the production of single crystal silicon A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including ... | 07/25/1978 |
