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A resilient headband in a shape for being mounted on the head of the user. The headband is equipped with a longitudinal slotted member for holding a placard.
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| Number | Title | Issue Date |
| 7645337 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystal... | 01/12/2010 |
| 7431766 | Crystal-structure-processed devices, methods and systems for making Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropria... | 10/07/2008 |
| 7396407 | Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recry... | 07/08/2008 |
| 7384476 | Method for crystallizing silicon A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the ... | 06/10/2008 |
| 7372447 | Microdisplay for portable communication systems The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system can employ an LED il... | 05/13/2008 |
| 7364805 | Crystal film, crystal substrate, and semiconductor device A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12 | 04/29/2008 |
| 7364993 | Method of enhancing the photoconductive properties of a semiconductor A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less ... | 04/29/2008 |
| 7365410 | Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous... | 04/29/2008 |
| 7354815 | Method for fabricating semiconductor devices using strained silicon bearing material A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of mat... | 04/08/2008 |
| 7351283 | System and method for fabricating a crystalline thin structure A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using ... | 04/01/2008 |
| 7332030 | Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property that can be modified when this zone is subjected to a thermal energy d... | 02/19/2008 |
| 7326295 | Fabrication method for polycrystalline silicon thin film and apparatus using the same The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherei... | 02/05/2008 |
| 7326876 | Sequential lateral solidification device A sequential lateral solidification device, for enhancing optical characteristics of the device and for preventing damage caused by an ablation of a crystallization thin film, is disclosed. The device includes a laser light source generating a laser beam, a projecti... | 02/05/2008 |
| 7321354 | Microdisplay for portable communication systems The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system can employ an LED il... | 01/22/2008 |
| 7320732 | Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains... | 01/22/2008 |
| 7319258 | Semiconductor-on-insulator chip with<100>-oriented transistors A semiconductor-on-insulator device includes a silicon active layer with a crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a crystal direction. Transistors oriented on a direction are formed on ... | 01/15/2008 |
| 7317179 | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate Systems and methods are disclosed for shaping and homogenizing a laser beam for interaction with a film. The shaping and homogenizing system may include a lens array and a lens that is positioned to receive laser light from the lens array and produce a respective el... | 01/08/2008 |
| 7311778 | Single scan irradiation for crystallization of thin films A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generat... | 12/25/2007 |
| 7302142 | Method and device for assembling optical components or an optical component and a substrate An optical assembly includes an optical component, a substrate, and a thin glass layer located at the interface between the optical component and the substrate. The substrate can be a metal, a semiconductor, a plastic, a shape memory material, or a metal layer depos... | 11/27/2007 |
| 7294197 | Formation of a silicon sheet by cold surface casting Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface... | 11/13/2007 |
| 7277188 | Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate Systems and methods are disclosed for focusing a beam for an interaction with a film deposited on a substrate wherein the focused beam defines a short axis and a long axis. In one aspect, the system may include a detecting system to analyze light reflected from the ... | 10/02/2007 |
| 7276317 | Laser mask and method of crystallization using the same A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference patte... | 10/02/2007 |
| 7242383 | Portable microdisplay system An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be di... | 07/10/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7205184 | Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same... | 04/17/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7192481 | Radiation detector A radiation detector made from a compound, or alloy, comprising CdxZn1−xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the pe... | 03/20/2007 |
| 7192479 | Laser annealing mask and method for smoothing an annealed surface A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having ap... | 03/20/2007 |
| 7186643 | Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated cir... | 03/06/2007 |
| 7183576 | Epitaxial and polycrystalline growth of SiGeCand SiCalloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique ... | 02/27/2007 |
| 7180198 | Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon A method of fabricating polycrystalline silicon includes: forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a fi... | 02/20/2007 |
| 7169226 | Defect reduction by oxidation of silicon A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate materials which may be used as a template for strained Si is described. A silicon-on-insulator substrate with a very thin top Si layer is used as a template for compressively str... | 01/30/2007 |
| 7164152 | Laser-irradiated thin films having variable thickness A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater... | 01/16/2007 |
| 7156916 | Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making Monolithic integrated crystalline-structure-processed arrays of mechanical, and combined mechanical and electrical devices, and related systems and processing methods. ... | 01/02/2007 |
| 7153359 | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal ... | 12/26/2006 |
| 7135388 | Method for fabricating single crystal silicon film The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate... | 11/14/2006 |
| 7135070 | Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making Monolithic stacked/layered room-temperature-processed materials whose internal crystalline structures are laser modification to create arrays of mechanical, and combined mechanical and electrical, devices with precision-established properties, such as important mech... | 11/14/2006 |
| 7132375 | Method of manufacturing a semiconductor device by crystallization of a semiconductor region by use of a continuous wave laser beam through the substrate A technique is provided for forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configuration of the invention is t... | 11/07/2006 |
| 7129153 | Process for forming polycrystalline silicon layer by laser crystallization A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiate... | 10/31/2006 |
| 7128783 | Thin-film crystal-structure-processed mechanical devices, and methods and systems for making Thin-film laser-effected internal crystalline structure modified materials suitable for the creation of various small-dimension mechanical devices, either singly or in monolithic arrays, such as MEMS devices. Processing is carried out at room temperature and atmosph... | 10/31/2006 |
