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| Number | Title | Issue Date |
| 7396411 | Apparatus for manufacturing single crystal A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a c... | 07/08/2008 |
| 7381268 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follo... | 06/03/2008 |
| 7344597 | Vapor-phase growth apparatus A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward... | 03/18/2008 |
| 7323053 | Pulling-down apparatus and container therefor It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom s... | 01/29/2008 |
| 7316746 | Crystals for a semiconductor radiation detector and method for making the crystals A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone... | 01/08/2008 |
| 7137734 | Device for measuring quantities of heat while simultaneously measuring the evaporation kinetics and/or condensation kinetics of the most minute amounts of liquid in order to determine thermodynamic parameters The invention relates to a device for measuring quantities of heat while simultaneously measuring the evaporation kinetics and/or condensation kinetics of the most minute amounts of liquid in order to determine thermodynamic parameters. The aim of the invention is t... | 11/21/2006 |
| 6899760 | Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus in... | 05/31/2005 |
| 6063188 | Crucible with differentially expanding release mechanism A crucible is held in a closed position when the crucible is at a certain temperature. A temperature sensitive member expands differently in response to heat than other portions of the crucible. When the temperature of the temperature sensitive member is ... | 05/16/2000 |
| 6036775 | Single crystal-growing method and apparatus A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal produc... | 03/14/2000 |
| 6033472 | Semiconductor single crystal manufacturing apparatus The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a see... | 03/07/2000 |
| 6027563 | Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid... | 02/22/2000 |
| 6010569 | Device for handling heavy components of a crystal puller according to the Czochralski method which is supported in a supporting frame In a device for handling heavy components of a crystal puller according to the Czochralski method, a supporting beam that can be pivoted about one vertical leg of a supporting frame and vertically adjusted includes holding claws for accommodating componen... | 01/04/2000 |
| 5989341 | Single crystal producing apparatus and a single crystal producing method using same A single crystal producing apparatus to be used for raising the single crystals by a CZ method. A cylindrical portion of a main chamber of the single crystal producing apparatus can be separated from the apparatus. Hot zone components can be retained with... | 11/23/1999 |
| 5972106 | Device and method for producing single crystal A device and method for producing single crystals by the Czohralski method can control the temperature distribution and thermal history of single crystals to improve the production efficiency and quality of single crystals. The device includes a cylinder ... | 10/26/1999 |
| 5968267 | Antivibration support for Czochralski crystal growing systems The uniformity of solid crystals grown by pulling a seed crystal from a molten charge material in a crucible is increased by eliminating vibration by supporting a housing for the solid crystal on a vibration isolator which rests on a supporting floor. Vib... | 10/19/1999 |
| 5958133 | Material handling system for growing high-purity crystals A crystal-growing machine (10) includes a furnace chamber (12) and two loading chambers (14 and 16) that permit simultaneous processing operations. At least one of the two loading chambers (14 and 16) includes a lifting mechanism (36) for pulling a crysta... | 09/28/1999 |
| 5932007 | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system A puller apparatus for a Czochralski crystal puller system is provided which includes a primary puller chuck and a secondary puller chuck. The primary puller chuck is attached to a seed crystal. The secondary puller chuck is shaped to enclose and retain a... | 08/03/1999 |
| 5900058 | Apparatus for producing single crystal An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum b... | 05/04/1999 |
| 5876496 | Method for feeding a granular raw material and feeding apparatus A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular... | 03/02/1999 |
| 5846322 | Apparatus for drawing single crystals A crucible is mounted on a crucible support bolt (11, 34) in a vacuum chamber (33) resting on a base stand (32) and can be heated by the thermal radiation of a heating element. A drawing element (35) is provided above the melt, by means of which the cryst... | 12/08/1998 |
| 5824149 | Method and apparatus for controlling crystal temperature gradients in crystal growing systems An enclosing structure extends into a transition zone of a crystal growing system through which the growing crystal is pulled. One or more independent temperature control devices are secured to the inside surface of the enclosing structure, which control ... | 10/20/1998 |
| 5797990 | Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller Orbital oscillations of the crystal ingot suspended in a cable in a Czochralski crystal puller are damped by mechanically connecting a high-temperature conductor to the ingot and generating a magnetic field in the vicinity of the conductor. The magnetic f... | 08/25/1998 |
| 5580171 | Solids mixing, storing and conveying system for use with a furnace for single crystal silicon production There is disclosed a static mixer for intimate mixing of granular solids, a solids flow controller and a solids transfer tube which are useful to mix polycrystalline material with dopant solids, and to feed the resultant mixture continuously and accuratel... | 12/03/1996 |
| 5394829 | Device for pulling silicon single crystal A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the devi... | 03/07/1995 |
| 5373807 | Apparatus for growing multiple single crystals A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals. The method includes... | 12/20/1994 |
| 5373808 | Method and apparatus for producing compound semiconductor single crystal of high decomposition pressure An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having ... | 12/20/1994 |
| 5314667 | Method and apparatus for single crystal silicon production There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferab... | 05/24/1994 |
| 5292487 | Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradien... | 03/08/1994 |
| 5290395 | Method of and apparatus for preparing single crystal A method and an apparatus for pulling a compound single crystal from a raw material molten solution is constructed to cause the solution to flow into a second crucible provided in a first crucible containing the raw material molten solution which is conti... | 03/01/1994 |
| 5256381 | Apparatus for growing single crystals of III-V compound semiconductors An apparatus for growing single crystals of III-V compound semiconductors of the vapor pressure control type using a vertical puller characterized by dividing the surface area of a melt into two sections, covering one section with a liquid encapsulant whi... | 10/26/1993 |
| 5074953 | Method for monocrystalline growth of dissociative compound semiconductors The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material an... | 12/24/1991 |
| 4873062 | Apparatus for the growth of single crystals In an apparatus for the Czochralsky growth of compound single crystals wherein a single crystal growing portion is provided in a sealed vessel whose opening part is sealed by a B2 O3 melt and which contains therein an atmosphere of a... | 10/10/1989 |
| 4738832 | Crystal holder A crystal holder for apparatus for pulling a crystal from a melt in a crucible with a reelable pulling member fastened to the crystal holder has thermal insulation between the fastener for the reelable pulling member and a clamping device for the crystal.... | 04/19/1988 |
| 4704257 | Apparatus for growing single crystals of dissociative compounds An apparatus for pulling single crystals of dissociative compounds, with a volatile component gas sealed in a growth chamber at a controlled pressure thereof, is disclosed, wherein the chamber is made of one or more materials selected from the group consi... | 11/03/1987 |
| 4686091 | Apparatus for manufacturing compound semiconductor single crystal An apparatus has a crucible for containing a GaAs raw material melt and a B2 O3 liquid encapsulating material therein, a heat generator arranged around the crucible so as to be coaxial therewith, and a heat insulator assembly arrange... | 08/11/1987 |
| 4668481 | Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process A compound-semiconductor single-crystal-manufacturing apparatus comprises a crucible for holding a molten raw material of GaAs and a liquid capsule element of B2 O3, a crucible holder, a heat element concentrically surrounding the cr... | 05/26/1987 |
| 4596700 | Apparatus for producing single crystal An apparatus for producing a single crystal according to the CZ method, which comprises a closed container consisting of upper and lower halves and having a shaft for pulling up the single crystal, at least a part of which contacting with said vapor of th... | 06/24/1986 |
| 4569828 | Crystal pulling apparatus for making single crystals of compound semiconductors containing a volatile component In a high pressure vessel such as an electric furnace using an inert gas of an extremely high pressure as an atmosphere for preventing the evaporation of arsenic or phosphorus when pulling a single crystal of a compound semiconductor having a high melting... | 02/11/1986 |
| 4371502 | Crystal growing furnace pulling head A pulling head for a Czochralski type crystal growing furnance includes a ball linked chain for suspending the growing crystal ingot, a sprocket for engaging such chain to pull the ingot from a melt, motor means for driving the sprocket and a chain storag... | 02/01/1983 |
| 4301120 | Chain introduction means for a crystal growth pulling head A crystal puller uses a chain and sprocket in the pulling head for vertical support of the growing crystal. Replacement of the chain is effectuated by providing an aperture in the top of the pulling head aligned with the sprocket. Replacement chain fed th... | 11/17/1981 |
