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| Number | Title | Issue Date |
| 8337615 | Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a... | 12/25/2012 |
| 8211228 | Method for producing single crystal and a method for producing annealed wafer The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal... | 07/03/2012 |
| 8137457 | One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first t... | 03/20/2012 |
| 8016941 | Method and apparatus for manufacturing a semiconductor A method and apparatus for crystallizing a semiconductor that includes a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation, comprising amorphizing at least a portion of the second layer, applying a ... | 09/13/2011 |
| 8002891 | Crystallization of C-Jun N-Terminal Kinase 3 (JNK3) The present invention relates to molecules and molecular complexes which comprise the active site binding pockets of JNK3 or close structural homologues of the active site binding pockets. ... | 08/23/2011 |
| 7815732 | Continuous method for partially crystallising a solution and a device for carrying out said method The invention relates to a device for the partial crystallization of a phase in a solution, comprising at least one pump for circulation of the solution in a circuit of a heat exchanger formed from at least one tube in contact with a cooling circuit, characterized i... | 10/19/2010 |
| 7811380 | Process for obtaining bulk mono-crystalline gallium-containing nitride A process for obtaining bulk mono-crystalline gallium-containing nitride, liminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed. According to the invention, the pro... | 10/12/2010 |
| 7625446 | High temperature high pressure capsule for processing materials in supercritical fluids A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending ... | 12/01/2009 |
| 7517406 | Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single cry... | 04/14/2009 |
| 7452419 | Method for performing crystallization trials A method is provided for operating a crystallization system comprising identifying a screen storage plate from among the plurality of screen storage plates stored in a screen storage station, each screen storage plate having a plurality of wells that contain a scree... | 11/18/2008 |
| 7393409 | Method for making large-volume CaFsingle cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at... | 07/01/2008 |
| 7387677 | Substrate for epitaxy and method of preparing the same The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respecti... | 06/17/2008 |
| 7371280 | High pressure crystal growth apparatuses and associated methods High pressure synthesis of various crystals such as diamond, cBN and the like can be carried out using reaction assemblies suitable for use in methods such as temperature gradient methods. The reaction assembly can be oriented substantially perpendicular to gravity ... | 05/13/2008 |
| 7342225 | Crystallographic metrology and process control A system (70) for crystallography including a sample holder (74), an electron source (76) for generating an electron beam, and a scanning actuator (80) for controlling the relative movement between the electron beam and the crystalline sa... | 03/11/2008 |
| 7338618 | Doped-type metal sulfide phosphor nanoparticle, dispersion thereof, and method for producing the same A doped-type metal sulfide phosphor nanoparticle dispersion, comprising a doped-type metal sulfide phosphor nanoparticle dispersed in a hydrophobic organic solvent, wherein the doped-type metal sulfide phosphor nanoparticle compris... | 03/04/2008 |
| 7335257 | Apparatus for and method of manufacturing a single crystal rod An apparatus is provided for manufacturing a single crystal rod from a poly crystal feed rod including a closed chamber at which chamber the feed rod is located. The chamber has an annular energy supply arranged around the feed rod for melting off the one end of the... | 02/26/2008 |
| 7306670 | Method for producing monocrystalline structures In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method a... | 12/11/2007 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7267810 | Method of synthesizing colloidal nanocrystals A method of making nanocrystals involves adding a chalocogen source to a hot solution of a metal-containing non-organometallic compound, such as CdO, in a first ligand solvent, such as TOP, and preferably subsequently cooling the resulting mixture to a lower tempera... | 09/11/2007 |
| 7229497 | Method of preparing nanocrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a continuous flow method. ... | 06/12/2007 |
| 7223303 | Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk A cleaning method cleans silicon for semiconductor materials using pure water treated by a reverse osmosis treatment and by ion exchange treatment and reduces the aluminum and iron remaining on the silicon surface. ... | 05/29/2007 |
| 7220706 | Enhanced melt-textured growth A method for the enhanced melt-textured growth of superconducting crystals is disclosed for a sample having a first material capable of exhibiting superconducting properties. The sample is heated above a peritectic temperature of the first material, cooled below the... | 05/22/2007 |
| 7214266 | Methods of crystal optimization The present invention provides an automated method of optimising crystallisation conditions for macromolecules comprising forming a trial comprising a sample comprising a gel forming component and the macromelecule to be crystallized, wherein at least one component ... | 05/08/2007 |
| 7210516 | Casting apparatus and method therefor A casting apparatus including a die that contains a molten metal that is poured via an opening section disposed above the die. The casting apparatus also includes a heater disposed above the die, and a gas supplying structure for supplying an inter gas to a surface ... | 05/01/2007 |
| 7208133 | Method for the preparation of IV-VI semiconductor nanoparticles A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a ... | 04/24/2007 |
| 7198672 | Drop tube type granular crystal producing device A drop tube type particulate crystalline body producing device is a device for creating a substantially spherical crystalline body by solidifying a particulate melt of an inorganic material while allowing it to free-fall inside a drop tube. This device 1 has ... | 04/03/2007 |
| 7192850 | Method for doping quantum dots A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second ... | 03/20/2007 |
| 7182989 | Flooring system and method A flooring system for use in a residential environment. The flooring system includes a subfloor adapted to support the mass of a user and modular surface covering elements for disposition in edge to edge covering arrangement across at least a portion of the subfloor... | 02/27/2007 |
| 7160388 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 01/09/2007 |
| 7146164 | Intelligent base station antenna beam-steering using mobile multipath feedback This invention relates to wireless communications devices, and more particularly to search processing load reduction methods for wireless communications based on CDMA. ... | 12/05/2006 |
| 7141114 | Process for producing a crystalline silicon ingot An improved process for producing a crystalline silicon ingot, a crystalline silicon wafer and a photovoltaic cell using the directional solidification process, and more particularly to loading and preparing a mold for the process of directional solidification. At l... | 11/28/2006 |
| 7133189 | Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single cry... | 11/07/2006 |
| 7118625 | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is suppl... | 10/10/2006 |
| 7105051 | High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents The present invention provides substantially monodisperse colloidal nanocrystals and new preparative methods for the synthesis of substantially monodisperse colloidal nanocrystals. These synthetic methods afford the ability to tune nanocrystal size and size distribu... | 09/12/2006 |
| 7097707 | GaN boule grown from liquid melt using GaN seed wafers A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby... | 08/29/2006 |
| 7090724 | Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pu... | 08/15/2006 |
| 7090788 | Nanoporous composites of polymerized lyotropic liquid-crystalline monomers, and hydrophobic polymers This invention provides composite materials that combine the material properties of hydrophobic polymers with internal structure and order provided by polymerization of lyotropic liquid crystals (LLCs). Composites, particularly nanocomposites, are made by forming a ... | 08/15/2006 |
| 7078088 | Disposable cutting sheet A disposable cutting sheet for Processing food items thereon includes a cut-resistant layer including a thermoplastic material ply and an absorbent ply, wherein the first layer has a surface area and wherein the thermoplastic material of the first layer includes a p... | 07/18/2006 |
| 7079778 | Rugged shock-resistant backplane for embedded systems Infrared communications scheme for use in an embedded system. According to a preferred embodiment, the invention comprises the use of an infrared communications scheme, according to IrDA protocol, which is utilized to transmit and receive data optically between circ... | 07/18/2006 |
| 7063879 | Disposable cutting sheet A disposable cutting sheet for processing food items thereon includes a first cut-resistant layer having a first surface area and including a first absorbent ply and a thermoplastic material ply. The cutting sheet further includes a second layer having a second surf... | 06/20/2006 |
