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| Number | Title | Issue Date |
| 8137461 | Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(Zry | 03/20/2012 |
| 7438790 | Electrode for electrolysis and process for producing the same The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate having at least one surface shape selected from the group consisting of... | 10/21/2008 |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7402206 | Method of synthesizing a compound of the formula MAX, film of the compound and its use A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing ... | 07/22/2008 |
| 7399357 | Atomic layer deposition using multilayers A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber vol... | 07/15/2008 |
| 7396409 | Acicular silicon crystal and process for producing the same By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively fo... | 07/08/2008 |
| 7387679 | Silicon carbide single crystal and method and apparatus for producing the same A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second... | 06/17/2008 |
| 7384481 | Method of forming a rare-earth dielectric layer Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide t... | 06/10/2008 |
| 7361222 | Device and method for producing single crystals by vapor deposition A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growin... | 04/22/2008 |
| 7361221 | Light irradiation apparatus, crystallization apparatus, crystallization method, semiconductor device and light modulation element A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with... | 04/22/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7329936 | Mask for sequential lateral solidification and crystallization method using thereof A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from ea... | 02/12/2008 |
| 7291218 | Method of fabricating orientation film for liquid crystal display device A method of fabricating an orientation film for a liquid crystal display device is provided. An orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generation element is provided. The substrate is placed on a stage in a vacuum ... | 11/06/2007 |
| 7276117 | Method of forming semi-insulating silicon carbide single crystal Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent elem... | 10/02/2007 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
| 7255746 | Nitrogen sources for molecular beam epitaxy MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in ... | 08/14/2007 |
| 7247920 | Method of composite gate formation Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film... | 07/24/2007 |
| 7235131 | Method for forming a single crystalline film A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molec... | 06/26/2007 |
| 7229890 | Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacito... | 06/12/2007 |
| 7226513 | Silicon wafer cleaning method This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon... | 06/05/2007 |
| 7227209 | Method of improved high K dielectric—polysilicon interface for CMOS devices Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor ... | 06/05/2007 |
| 7220315 | Method of producing polycrystalline thin film and method of producing an oxide superconducting element A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjuste... | 05/22/2007 |
| 7208394 | Method of manufacturing a semiconductor device with a fluorine concentration At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a sin... | 04/24/2007 |
| 7199415 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 04/03/2007 |
| 7192821 | Manufacturing process of semi-conductor device Exemplary embodiments discourage or prevent impurities from mixing in a film of a semiconductor layer in a manufacturing process of a semiconductor device. A manufacturing process of a semiconductor device includes first forming a semiconductor layer, second removin... | 03/20/2007 |
| 7186295 | Quartz thin film A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkox... | 03/06/2007 |
| 7183575 | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is differen... | 02/27/2007 |
| 7182812 | Direct synthesis of oxide nanostructures of low-melting metals The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide n... | 02/27/2007 |
| 7183145 | Semiconductor device and manufacturing method thereof In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element whi... | 02/27/2007 |
| 7157067 | Tough diamonds and method of making thereof A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50–90 GPa and a fracture toughness of 11–20 MPa m1/2. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing... | 01/02/2007 |
| 7147714 | Manufacturing method of silicon carbide single crystals When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed f... | 12/12/2006 |
| 7129128 | Method of improved high K dielectric-polysilicon interface for CMOS devices Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor ... | 10/31/2006 |
| 7115516 | Method of depositing a material layer A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ... | 10/03/2006 |
| 7090723 | Highly anisotropic ceramic thermal barrier coating materials and related composites High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch. ... | 08/15/2006 |
| 7088037 | Field emission display device A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native ... | 08/08/2006 |
| 7063742 | N-type semiconductor diamond and its fabrication method A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen s... | 06/20/2006 |
| 7060131 | Epitaxy with compliant layers of group-V species The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is sup... | 06/13/2006 |
| 7056383 | Tantalum based crucible A crucible is provided that is thermally stable at high temperatures and is suitable for use in the growth of large, bulk AlN, AlxGa1-xN or other nitride single crystals. The crucible is comprised of specially treated tantalum. During the initi... | 06/06/2006 |
| 7022183 | Semiconductor thin film and process for production thereof To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconducto... | 04/04/2006 |
