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| Number | Title | Issue Date |
| 7633715 | Magnetic head for use in a heat-assisted magnetic recording apparatus A magnetic head for use in a magnetic recording apparatus for magnetically recording information in a state of heating and elevating the temperature of a recording portion of a recording medium by emitting electrons to the recording medium, the magnetic head includi... | 12/15/2009 |
| 7443003 | Shape memory alloy information storage device An information storage device includes a substrate and a shape memory alloy film established on the substrate. The shape memory alloy film may receive, supply, and store digital information. One or more thermoelectric modules is/are nanoimprinted between the substra... | 10/28/2008 |
| 7432158 | Method for retaining nanocluster size and electrical characteristics during processing A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed over the semiconductor layer. A first p... | 10/07/2008 |
| 7408186 | Controlled alignment catalytically grown nanostructures Systems and methods are described for controlled alignment of catalyticaly grown nanostructures in a large-scale synthesis process. A composition includes an elongated nanostructure including a first segment defining a first axis and a second segment coupled to the ... | 08/05/2008 |
| 7408184 | Functional molecular element and functional molecular device A functional molecular element whose functions can be controlled by an electric field based on a new principle. A Lewis base molecule (14) with positive permittivity anisotropy or a dipole moment in the major axis direction of the molecule is disposed, via a ... | 08/05/2008 |
| 7405420 | Method and system for chalcogenide-based nanowire memory Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locat... | 07/29/2008 |
| 7394687 | Non-volatile-shadow latch using a nanotube switch A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the correspondin... | 07/01/2008 |
| 7391074 | Nanowire based non-volatile floating-gate memory A non-volatile memory transistor with a nanocrystal-containing floating gate formed by nanowires is disclosed. The nanocrystals are formed by the growth of short nanowires over a crystalline program oxide. As a result, the nanocrystals are single-crystals of uniform... | 06/24/2008 |
| 7382648 | Nanomechanical switching device A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostruc... | 06/03/2008 |
| 7374813 | Constructive nanolithography A patterned organic monolayer or multiplayer film self-assembled on a solid substrate, the pattern consisting in a site-defined surface chemical modification non-destructively inscribed in the organic monolayer or multilayer by means of an electrically biased conduc... | 05/20/2008 |
| 7362605 | Nanoelectromechanical memory cells and data storage devices Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read ... | 04/22/2008 |
| 7355238 | Nonvolatile semiconductor memory device having nanoparticles for charge retention A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the sou... | 04/08/2008 |
| 7352007 | Phosphorescent nanotube memory device An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel. ... | 04/01/2008 |
| 7352607 | Non-volatile switching and memory devices using vertical nanotubes Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Methods of sensing the state of the devices include measuring capacitance, and tunnel... | 04/01/2008 |
| 7352608 | Controllable nanomechanical memory element A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in ... | 04/01/2008 |
| 7336523 | Memory device using nanotube cells A memory device using a nanotube cell comprises a plurality of nanotube sub-cell arrays each having a hierarchical bit line structure including a main bit line and a sub-bit line. In the memory device, a nanotube cell array comprising a capacitor and a PNPN nanotube... | 02/26/2008 |
| 7312100 | In situ patterning of electrolyte for molecular information storage devices This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L2-M-L1-Z1 whe... | 12/25/2007 |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7294875 | Nanoscale programmable structures and methods of forming and using same A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms wit... | 11/13/2007 |
| 7280394 | Field effect devices having a drain controlled via a nanotube switching element Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconducto... | 10/09/2007 |
| 7276172 | Method for preparing a nanowire crossbar structure and use of a structure prepared by this method The present invention relates to a method for preparing a nanowire crossbar structure, comprising: (a) providing a substrate; (b) depositing thereon a composite structure comprising a nucleic acid-block copolymer having equidistant nucleic acid-catalyst binding site... | 10/02/2007 |
| 7274078 | Devices having vertically-disposed nanofabric articles and methods of making the same Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive t... | 09/25/2007 |
| 7245520 | Random access memory including nanotube switching elements A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive ... | 07/17/2007 |
| 7245068 | Apparatus for controlled alignment of catalytically grown nanostructures Systems and methods are described for controlled alignment of catalyticaly grown nanostructures in a large-scale synthesis process. An apparatus includes an electrode including: a protruding section defining an edge; and a nonprotruding section coupled to the protru... | 07/17/2007 |
| 7183159 | Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices An integrated circuit is formed by identifying multiple regions, each having transistors that have a gate oxide thickness that differs between the multiple regions. One of the regions includes transistors having a nanocluster layer and another of the regions include... | 02/27/2007 |
| 7173313 | Semiconductor device with insulating layer having ion-coated nanoparticles A semiconductor device, which is arranged in a semiconductor body (1), and which comprises at least one source region (4) and at least one drain region (5), each being of the first conductivity type, and at least one body (8) of the secon... | 02/06/2007 |
| 7157345 | Source side injection storage device and method therefor A memory charge storage device has regions of sacrificial material overlying a substrate (12). For each memory cell a first doped region (20) and a second doped region (24) are formed within the substrate and on opposite sides of one (16)... | 01/02/2007 |
| 7155343 | Nanocircuitry for sensing, recording and outputting data The device implements nanotechnology by embedding nanocircuits with sensors to surfaces such as walls, wall coverings, clothing, windows, window coverings, flooring, roofs, roadways and telephone poles. Using a plurality of nanocircuits in a multitude of locations, ... | 12/26/2006 |
| 7145824 | Temperature compensation of thin film diode voltage threshold in memory sensing circuit Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit and an array core with a temperature variable select device. The arr... | 12/05/2006 |
| 7101760 | Charge trapping nanocrystal dielectric for non-volatile memory transistor A layer of nanocrystals for use in making EEPROMs is made by creating a matrix of silicon seeds in annealed silicon oxide atop a thin silicon dioxide layer. Then nanocrystals are grown on the seeds by vapor deposition of silane in a reactor until a time before agglo... | 09/05/2006 |
| 7087920 | Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit A nanowire includes a single crystalline semiconductor material having an exterior surface and an interior region and at least one dopant atom. At least a portion of the nanowire thermally switches between two conductance states; a high conductance state, where a hi... | 08/08/2006 |
| 6674672 | Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits A compensation circuit for transistor threshold voltages in integrated circuits is described. The compensation circuit includes a transistor, current source, and gate reference voltage supply. The transistor is biased to provide a well bias voltage, or ba... | 01/06/2004 |
| 6663797 | Stabilization of configurable molecular mechanical devices A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire ... | 12/16/2003 |
| 6665258 | Method and apparatus for recording, storing and reproducing information A method and apparatus for recording and storing information on and reproducing information from a storage medium is described, wherein the active storage medium forms part of the write/read signal path.... | 12/16/2003 |
| 6661691 | Interconnection structure and methods Interconnection structures for integrated circuits have a first array of cells, at least a second array of cells parallel to the first array, and interconnections disposed for connecting cells of the first array with cells of the second array, at least so... | 12/09/2003 |
| 6657884 | High density non-volatile memory device This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault toler... | 12/02/2003 |
| 6657888 | Application of high spin polarization materials in two terminal non-volatile bistable memory devices Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate... | 12/02/2003 |
| 6647297 | Permanent retinal implant device The retinal prosthesis test device is comprised of a thin wafer of glass made from nanochannel glass (NGC) with very small channels perpendicular to the plane of the wafer filled with an electrical conductor forming microwires. One surface of the glass is... | 11/11/2003 |
| 6643165 | Electromechanical memory having cell selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotub... | 11/04/2003 |
